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Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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Journal ArticleDOI
Hot-carrier-induced degradation of metal-oxide-semiconductor field-effect transistors: Oxide charge versus interface traps
TL;DR: In this paper, it was shown that hot-carrier-induced degradation of metal oxide-semiconductor field effect transistors is caused by charge trapping in the oxide or interface trap generation.
Proceedings ArticleDOI
Monolithic 3D chip integrated with 500ns NVM, 3ps logic circuits and SRAM
Chang-Hong Shen,Jia-Min Shieh,Tsung-Ta Wu,Wen-Hsien Huang,Chih-Chao Yang,Chih-Jen Wan,Chein-Din Lin,Hsing-Hsiang Wang,Bo-Yuan Chen,Guo-Wei Huang,Yu-Chung Lien,S. Simon Wong,Chieh Wang,Yinchieh Lai,Chien-Fu Chen,Meng-Fan Chang,Chenming Hu,Fu-Liang Yang +17 more
TL;DR: Closely stacked monolithic 3D circuits envision advanced high-performance, rich function, and low power intelligent mobile devices.
Journal ArticleDOI
Electromigration reliability of tungsten and aluminum vias and improvements under AC current stress
TL;DR: In this paper, the reliability of tungsten and aluminum vias with respect to electromigration failure under DC, pulse-DC, and AC stressing has been studied using Kelvin test structures.
Journal ArticleDOI
Experimental Demonstration of a Ferroelectric HfO 2 -Based Content Addressable Memory Cell
Ava J. Tan,Korok Chatterjee,Jiuren Zhou,Daewoong Kwon,Yu-Hung Liao,Suraj Cheema,Chenming Hu,Sayeef Salahuddin +7 more
TL;DR: In this article, a content addressable memory (CAM) cell based on ferroelectric HfO2 field effect transistors (FeFETs) is presented.
Proceedings ArticleDOI
BSIM — Industry standard compact MOSFET models
Yogesh Singh Chauhan,S. Venugopalan,Mohammed A. Karim,Sourabh Khandelwal,Navid Paydavosi,P. K. Thakur,Ali M. Niknejad,Chenming Hu +7 more
TL;DR: The BSIM-CMG model has been developed to model common symmetric double, triple, quadruple and surround gate MOSFETs as discussed by the authors, which is the surface potential based model for multi-gate MOSFs.