C
Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
More filters
Proceedings ArticleDOI
Characterization and modeling of a highly reliable metal-to-metal antifuse for high-performance and high-density field-programmable gate arrays
Chih-Ching Shih,Roy Lambertson,Frank Hawley,F. Issaw,John L. McCollum,Esmat Z. Hamdy,Hiroshi Sakurai,Hiroshi Yuasa,Hirotsugu Honda,T. Yamaoka,T. Wada,Chenming Hu +11 more
TL;DR: In this article, the reliability of a new amorphous silicon/dielectric antifuse is characterized and modeled, where both breakdown and leakage criteria are used to investigate their effects on time-to-fail.
Journal ArticleDOI
Modeling of GaN-Based Normally-Off FinFET
Chandan Yadav,Pragya Kushwaha,Sourabh Khandelwal,Juan Pablo Duarte,Yogesh Singh Chauhan,Chenming Hu +5 more
TL;DR: In this paper, a macromodel for normally off (enhancement mode) AlGaN/GaN-based FinFET (2-DEG channel at top with two MOS like sidewall channels) is proposed.
Journal ArticleDOI
Loop-based interconnect modeling and optimization approach for multigigahertz clock network design
TL;DR: Closed-form loop resistance and inductance models are proposed for fully shielded global clock interconnect structures, which capture high-frequency effects including inductance and proximity effects.
Proceedings ArticleDOI
Negative Capacitance, n-Channel, Si FinFETs: Bi-directional Sub-60 mV/dec, Negative DIBL, Negative Differential Resistance and Improved Short Channel Effect
Hong Zhou,Daewoong Kwon,Angada B. Sachid,Yu-Hung Liao,Korok Chatterjee,Ava J. Tan,Ajay K. Yadav,Chenming Hu,Sayeef Salahuddin +8 more
TL;DR: In this article, negative capacitance (NC) FinFETs with ferroelectric Hf 0.5 Zr 0.2 O 2 (HZO) as gate dielectric on fully depleted silicon on insulator (FDSOI) substrate are presented.
Journal ArticleDOI
Separation by plasma implantation of oxygen (SPIMOX) operational phase space
S. Sundar Kumar Iyer,Xiang Lu,Jingbao Liu,Jing Min,Zhineng Fan,Paul K. Chu,Chenming Hu,Nathan W. Cheung +7 more
TL;DR: In this paper, the phase space for SPIMOX implantation was developed for a definite implantation voltage and dose which are dependent on the dimensions of the SOI structure to be fabricated.