C
Chi-Woo Lee
Researcher at University College Cork
Publications - 54
Citations - 5881
Chi-Woo Lee is an academic researcher from University College Cork. The author has contributed to research in topics: MOSFET & Nanowire. The author has an hindex of 21, co-authored 54 publications receiving 5339 citations. Previous affiliations of Chi-Woo Lee include Tyndall National Institute & Incheon National University.
Papers
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Journal ArticleDOI
Nanowire transistors without junctions
Jean-Pierre Colinge,Chi-Woo Lee,Aryan Afzalian,Aryan Afzalian,Nima Dehdashti Akhavan,Ran Yan,Isabelle Ferain,Pedram Razavi,B. O'Neill,Alan Blake,Mary White,Anne-Marie Kelleher,Brendan McCarthy,Richard Murphy +13 more
TL;DR: A new type of transistor in which there are no junctions and no doping concentration gradients is proposed and demonstrated, which has near-ideal subthreshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.
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Junctionless multigate field-effect transistor
Chi-Woo Lee,Aryan Afzalian,Nima Dehdashti Akhavan,Ran Yan,Isabelle Ferain,Jean-Pierre Colinge +5 more
TL;DR: In this article, the authors describe a metaloxide-semiconductor MOS transistor concept in which there are no junctions and the channel doping is equal in concentration and type to the source and drain extension doping.
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Performance estimation of junctionless multigate transistors
Chi-Woo Lee,Isabelle Ferain,Aryan Afzalian,Ran Yan,Nima Delidashti Akhavan,Pedrarn Razavi,Jean-Pierre Colinge +6 more
TL;DR: In this paper, the authors describe the simulation of the electrical characteristics of a new transistor concept called the junctionless multigate field effect transistor (MuGFET), which has no junctions, a simpler fabrication process, less variability and better electrical properties than classical inversionmode devices with PN junctions at the source and drain.
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Junctionless nanowire transistor (JNT): Properties and design guidelines
Abhinav Kranti,Ran Yan,Chi-Woo Lee,Isabelle Ferain,Ran Yu,N. Dehdashti Akhavan,Pedram Razavi,Jean-Pierre Colinge +7 more
TL;DR: In this article, a junctionless nanowire transistors (gated resistors) are compared to inversion-mode and accumulation-mode MOS devices using bulk conduction instead of surface channel.
Journal ArticleDOI
High-Temperature Performance of Silicon Junctionless MOSFETs
Chi-Woo Lee,Adrien Borne,Isabelle Ferain,Aryan Afzalian,Ran Yan,N. Dehdashti Akhavan,Pedram Razavi,Jean-Pierre Colinge +7 more
TL;DR: In this paper, the temperature dependence of the main electrical parameters of junctionless (JL) silicon nanowire transistors is investigated and compared to the standard inversion-and accumulation-mode FETs.