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Chia-Seng Chang

Researcher at Academia Sinica

Publications -  147
Citations -  8389

Chia-Seng Chang is an academic researcher from Academia Sinica. The author has contributed to research in topics: Scanning tunneling microscope & Scanning tunneling spectroscopy. The author has an hindex of 27, co-authored 141 publications receiving 7420 citations. Previous affiliations of Chia-Seng Chang include National Taiwan University & National Tsing Hua University.

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Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition

TL;DR: Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS(2) monolayer, and TEM images verify that the synthesized MoS (2) sheets are highly crystalline.
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Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates

TL;DR: It is reported that the high-temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS(2) thin layers with superior electrical performance on insulating substrates.
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Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces.

TL;DR: The growth of high-quality MS2 (M = Mo, W) monolayers is demonstrated using ambient-pressure chemical vapor deposition (APCVD) with the seeding of perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS) and a robust technique in transferring the MS2 monolayer samples to diverse surfaces is demonstrated.
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A Direct and Polymer-Free Method for Transferring Graphene Grown by Chemical Vapor Deposition to Any Substrate

TL;DR: A polymer-free method that can routinely transfer relatively large-area graphene to any substrate with advanced electrical properties and superior atomic and chemical structures as compared to the graphene sheets transferred with conventional polymer-assisted methods is demonstrated.
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Single-step deposition of high-mobility graphene at reduced temperatures

TL;DR: A plasma-enhanced CVD chemistry that enables the entire process to take place in a single step, at reduced temperatures (<420 °C), and in a matter of minutes, indicates that elevated temperatures and crystalline substrates are not necessary for synthesizing high-quality graphene.