Chin C. Lee

Bio: Chin C. Lee is an academic researcher from University of California, Irvine. The author has contributed to research in topics: Soldering & Scanning electron microscope. The author has an hindex of 31, co-authored 221 publications receiving 3222 citations. Previous affiliations of Chin C. Lee include University of California & Carnegie Mellon University.

A new bonding technology using gold and tin multilayer composite structures

Abstract: A bonding technology which utilizes chromium, gold, and tin and gold deposited directly on the backside of a device die to form a multilayer composite is reported. The substrate accepting the die is coated with chromium and gold layers. The die and the substrate are brought into contact and heated to 310-320 degrees C. Due to the unique feature of the gold-tin alloy system, the tin layer melts first and dissolves the gold layers of the composite to produce a solution mixed with solid, which in turn would dissolve a portion of the gold layer on the substrate to develop a near eutectic bonding. In the composite, since the tin layer is protected by an outer gold layer in the same vacuum cycle, tin oxidation, which is a major cause of difficulty in achieving quality bondings, is reduced. This technology thus eliminates the requirement of preforms, prevents tin oxidation, and provides precise control of the bonding thickness. Results of bonding 4-mm by 4-mm GaAs dice on alumina substrates show that high-quality bondings are obtained as determined by a scanning acoustic microscope (SAM). >

Au-In bonding below the eutectic temperature

Abstract: A bonding method using Au-In alloy which requires a low process temperature of 200 degrees C to produce high temperature (454 degrees C) bonds is reported. Multiple layers of Au and In are deposited on semiconductor wafers in one vacuum cycle to reduce In oxidation. The semiconductor dice are then bonded to substrates coated with Au. Above 157 degrees C, the indium layer melts and dissolves the Au layers to form a mixture of liquid and solid. The solid-liquid interdiffusion process continues until the mixture solidifies to form the Au-In bond. A scanning acoustic microscope (SAM) was used to determine the excellent bonding quality before and after thermal shock tests while an energy dispersive X-ray (EDX) was employed to determine the composition of the resulting bonds. The resulting bond has an unbonding temperature greater than 545 degrees C. Due to the low process temperature, the stress on the bonded structure caused by thermal expansion mismatch is reduced. This type of bonding is useful when bonding at a low temperature is followed by a subsequent higher temperature process. >

Silver-indium joints produced at low temperature for high temperature devices

Abstract: A two-step fluxless bonding process adopted to produce high temperature silver-indium joints (80 wt% silver and 20 wt% indium) at relatively low process temperature of 206/spl deg/C has been developed. After annealing the joint continuously for 26 h at 145/spl deg/C, its melting temperature increases to 765-780/spl deg/C, as confirmed by a de-bonding test. The technique thus developed provides a viable alternative to packaging many high temperature devices running at 350/spl deg/C and above. The bonding quality of the Ag-In joints produced was examined using scanning acoustic microscopy. The joint cross-section was also studied using a scanning electron microscope equipped with an energy dispersive X-ray (EDX) spectroscope to find the local microstructure and composition. The results have shown that the joint is nearly void-free and uniform in thickness ranging from 7.2 to 7.8 /spl mu/m. The annealed sample joint, as determined by EDX, is mainly composed of AgIn/sub 2/, Ag/sub 2/In, and AuIn/sub 2/ grains embedded in an Ag-rich Ag-In alloy matrix. During joint formation, the intermetallic compound AgIn/sub 2/, in particular, prevents the indium layer from oxidation, and therefore, no flux is needed. In addition, low process temperatures help to reduce the thermal stresses developed in the bonded structure due to thermal expansion mismatch. Finally, reliability tests were conducted on three sets of annealed joints using a high temperature oven running continuously at 500/spl deg/C for 10, 100, and 1000 h each. Scanning acoustic microscopy (SAM) images on these samples confirmed that the joints have an excellent survivability in a high temperature environment.

Measurement of temperature profiles on visible light-emitting diodes by use of a nematic liquid crystal and an infrared laser

Abstract: We present a new technique for measuring the temperature profiles of visible LED chips by use of a nematic liquid crystal with IR laser illumination. The LEDs studied have a multi-quantum-well InGaN/GaN/sapphire structure. New features in this technique are the use of a high-power IR laser beam as the sensing light and the insertion of a color filter in the optical path to block the high-intensity LED light. For the LEDs measured, the conversion efficiency decreases by 70% when the junction temperature rises from 25 to 107 °C. This technique is a valuable tool for studying the performance of LEDs as a function of junction temperature.

Terahertz quantum-cascade lasers

Abstract: Six years after their birth, terahertz quantum-cascade lasers can now deliver milliwatts or more of continuous-wave coherent radiation throughout the terahertz range — the spectral regime between millimetre and infrared wavelengths, which has long resisted development. This paper reviews the state-of-the-art and future prospects for these lasers, including efforts to increase their operating temperatures, deliver higher output powers and emit longer wavelengths.

Energy dissipation and transport in nanoscale devices

Abstract: Understanding energy dissipation and transport in nanoscale structures is of great importance for the design of energy-efficient circuits and energy-conversion systems. This is also a rich domain for fundamental discoveries at the intersection of electron, lattice (phonon), and optical (photon) interactions. This review presents recent progress in understanding and manipulation of energy dissipation and transport in nanoscale solid-state structures. First, the landscape of power usage from nanoscale transistors (∼10−8 W) to massive data centers (∼109 W) is surveyed. Then, focus is given to energy dissipation in nanoscale circuits, silicon transistors, carbon nanostructures, and semiconductor nanowires. Concepts of steady-state and transient thermal transport are also reviewed in the context of nanoscale devices with sub-nanosecond switching times. Finally, recent directions regarding energy transport are reviewed, including electrical and thermal conductivity of nanostructures, thermal rectification, and the role of ubiquitous material interfaces. Open image in new window

Energy Dissipation and Transport in Nanoscale Devices

Abstract: Understanding energy dissipation and transport in nanoscale structures is of great importance for the design of energy-efficient circuits and energy-conversion systems. This is also a rich domain for fundamental discoveries at the intersection of electron, lattice (phonon), and optical (photon) interactions. This review presents recent progress in understanding and manipulation of energy dissipation and transport in nanoscale solid-state structures. First, the landscape of power usage from nanoscale transistors (~10^-8 W) to massive data centers (~10^9 W) is surveyed. Then, focus is given to energy dissipation in nanoscale circuits, silicon transistors, carbon nanostructures, and semiconductor nanowires. Concepts of steady-state and transient thermal transport are also reviewed in the context of nanoscale devices with sub-nanosecond switching times. Finally, recent directions regarding energy transport are reviewed, including electrical and thermal conductivity of nanostructures, thermal rectification, and the role of ubiquitous material interfaces.

Integrated optics

Abstract: In order to enable optical systems to operate with a high degree of compactness and reliability it is necessary to combine large number of optical functions in small monolithic structures. A development, somewhat reminiscent of that that took place in Integrated Electronics, is now beginning to take place in optics. The initial challenge in this emerging field, known appropriately as "Integrated Optics", is to demonstrate the possibility of performing basic optical functions such as light generation, coupling, modulation, and guiding in Integrated Optical configurations. The talk will review the main theoretical and experimental developments to date in Integrated Optics. Specific topics to be discussed include: Material considerations, guiding mechanisms, modulation, coupling and mode losses. The fabrication and applications of periodic thin film structures will be discussed.