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Ching-Mei Hsu

Researcher at Stanford University

Publications -  15
Citations -  4989

Ching-Mei Hsu is an academic researcher from Stanford University. The author has contributed to research in topics: Solid oxide fuel cell & Photovoltaics. The author has an hindex of 12, co-authored 15 publications receiving 4776 citations. Previous affiliations of Ching-Mei Hsu include Lawrence Berkeley National Laboratory.

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Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays.

TL;DR: The fabrication of a-Si:H nanowires and nanocones function as both absorber and antireflection layers, which offer a promising approach to enhance the solar cell energy conversion efficiency.
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Carbon-silicon core-shell nanowires as high capacity electrode for lithium ion batteries.

TL;DR: A novel design of carbon-silicon core-shell nanowires for high power and long life lithium battery electrodes that shows great performance as anode material and high mass loading and area capacity, which is comparable to commercial battery values are introduced.
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Nanodome Solar Cells with Efficient Light Management and Self-Cleaning

TL;DR: Novel nanodome solar cells, which have periodic nanoscale modulation for all layers from the bottom substrate, through the active absorber to the top transparent contact, are demonstrated, which opens up exciting opportunities for a variety of photovoltaic devices to further improve performance, reduce materials usage, and relieve elemental abundance limitations.
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Light trapping in solar cells: can periodic beat random?

TL;DR: A direct comparison with a cell deposited on the random pyramidal morphology of state-of-the-art zinc oxide electrodes, replicated onto glass using nanoimprint lithography, demonstrates unambiguously that periodic structures rival random textures.
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Wafer-scale silicon nanopillars and nanocones by Langmuir-Blodgett assembly and etching

TL;DR: In this article, a method combining Langmuir-Blodgett assembly and reactive ion etching was developed to fabricate nanopillars with uniform coverage over an entire 4 inch wafer.