Christian Enz

Bio: Christian Enz is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: CMOS & Noise (electronics). The author has an hindex of 46, co-authored 360 publications receiving 11701 citations. Previous affiliations of Christian Enz include Rockwell Automation & École Normale Supérieure.

Circuit techniques for reducing the effects of op-amp imperfections: autozeroing, correlated double sampling, and chopper stabilization

Abstract: In linear IC's fabricated in a low-voltage CMOS technology, the reduction of the dynamic range due to the dc offset and low frequency noise of the amplifiers becomes increasingly significant. Also, the achievable amplifier gain is often quite low in such a technology, since cascoding may not be a practical circuit option due to the resulting reduction of the output signal swing. In this paper, some old and some new circuit techniques are described for the compensation of the amplifier's most important nonideal effects including the noise (mainly thermal and 1/f noise), the input-referred dc offset voltage as well as the finite gain resulting in a nonideal virtual ground at the input.

An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications

Abstract: Afully analytical MOS transistor model dedicated to the design and analysis of low-voltage, low-current analog circuits is presented. All the large-and small-signal variables, namely the currents, the transconductances, the intrinsic capacitances, the non-quasi-static transadmittances and the thermal noise are continuous in all regions of operation, including weak inversion, moderate inversion, strong inversion, conduction and saturation. The same approach is used to derive all the equations of the model: the weak and strong inversion asymptotes are first derived, then the variables of interest are normalized and linked using an appropriate interpolation function. The model exploits the inherent symmetry of the device by referring all the voltages to the local substrate. It is shown that the inversion chargeQ inv is controlled by the voltage differenceV P — Vch whereV ch is the channel voltage, defined as the difference between the quasi-Fermi potentials of the carriers. The pinch-off voltageV P is defined as the particular value of Vch, such that the inversion charge is zero for a given gate voltage. It depends only on the gate voltage and can be interpreted as the equivalent effect of the gate voltage referred to the channel. The various modes of operation of the transistor are then presented in terms of voltagesV P —V S andV P —V D Using the charge sheet model with the assumption of constant doping in the channel, the drain currentIDis derived and expressed as the difference between a forward componentI F and a reverse componentI R. Each of these is proportional to a function ofV P —V S respectivelyV P —V D through a specific currentI S This function is exponential in weak inversion and quadratic in strong inversion. The current in the moderate inversion region is then modelled by using an appropriate interpolation function resulting in a continuous expression valid from weak to strong inversion. A quasi-static small-signal model including the transconductances and the intrinsic capacitances is obtained from an accurate evaluation of the total charges stored on the gate and in the channel. The transconductances and the intrinsic capacitances are modelled in moderate inversion using the same interpolation function and without any additional parameters. This small-signal model is then extended to higher frequencies by replacing the transconductances by first order transadmittances obtained from a non-quasi-static calculation. All these transadmittances have the same characteristic time constant which depends on the bias condition in a continuous manner. To complete the model, a general expression for the thermal noise valid in all regions of operation is derived. This model has been successfully implemented in several computer simulation programs and has only 9 physical parameters, 3 fine tuning fitting coefficients and 2 additional temperature parameters.

Minimum-energy broadcast in all-wireless networks: NP-completeness and distribution issues

Abstract: In all-wireless networks a crucial problem is to minimize energy consumption, as in most cases the nodes are battery-operated. We focus on the problem of power-optimal broadcast, for which it is well known that the broadcast nature of the radio transmission can be exploited to optimize energy consumption. Several authors have conjectured that the problem of power-optimal broadcast is NP-complete. We provide here a formal proof, both for the general case and for the geometric one; in the former case, the network topology is represented by a generic graph with arbitrary weights, whereas in the latter a Euclidean distance is considered. We then describe a new heuristic, Embedded Wireless Multicast Advantage. We show that it compares well with other proposals and we explain how it can be distributed.

WiseNET: an ultralow-power wireless sensor network solution

Abstract: A wireless sensor network consists of many energy-autonomous microsensors distributed throughout an area of interest. Each node monitors its local environment, locally processing and storing the collected data so that other nodes can use it. To optimize power consumption, the Swiss Center for Electronics and Microtechnology has developed WiseNET, an ultralow-power platform for the implementation of wireless sensor networks that achieves low-power operation through a careful codesign approach. The WiseNET platform uses a codesign approach that combines a dedicated duty-cycled radio with WiseMAC, a low-power media access control protocol, and a complex system-on-chip sensor node to exploit the intimate relationship between MAC-layer performance and radio transceiver parameters. The WiseNET solution consumes about 100 times less power than comparable solutions.

Design of Analog CMOS Integrated Circuits

Abstract: The CMOS technology area has quickly grown, calling for a new text--and here it is, covering the analysis and design of CMOS integrated circuits that practicing engineers need to master to succeed. Filled with many examples and chapter-ending problems, the book not only describes the thought process behind each circuit topology, but also considers the rationale behind each modification. The analysis and design techniques focus on CMOS circuits but also apply to other IC technologies. Table of contents 1 Introduction to Analog Design 2 Basic MOS Device Physics 3 Single-Stage Amplifiers 4 Differential Amplifiers 5 Passive and Active Current Mirrors 6 Frequency Response of Amplifiers 7 Noise 8 Feedback 9 Operational Amplifiers 10 Stability and Frequency Compensation 11 Bandgap References 12 Introduction to Switched-Capacitor Circuits 13 Nonlinearity and Mismatch 14 Oscillators 15 Phase-Locked Loops 16 Short-Channel Effects and Device Models 17 CMOS Processing Technology 18 Layout and Packaging

Internet of things: Vision, applications and research challenges

Abstract: The term ‘‘Internet-of-Things’’ is used as an umbrella keyword for covering various aspects related to the extension of the Internet and the Web into the physical realm, by means of the widespread deployment of spatially distributed devices with embedded identification, sensing and/or actuation capabilities. Internet-of-Things envisions a future in which digital and physical entities can be linked, by means of appropriate information and communication technologies, to enable a whole new class of applications and services. In this article, we present a survey of technologies, applications and research challenges for Internetof-Things.

Energy harvesting vibration sources for microsystems applications

Abstract: This paper reviews the state-of-the art in vibration energy harvesting for wireless, self-powered microsystems. Vibration-powered generators are typically, although not exclusively, inertial spring and mass systems. The characteristic equations for inertial-based generators are presented, along with the specific damping equations that relate to the three main transduction mechanisms employed to extract energy from the system. These transduction mechanisms are: piezoelectric, electromagnetic and electrostatic. Piezoelectric generators employ active materials that generate a charge when mechanically stressed. A comprehensive review of existing piezoelectric generators is presented, including impact coupled, resonant and human-based devices. Electromagnetic generators employ electromagnetic induction arising from the relative motion between a magnetic flux gradient and a conductor. Electromagnetic generators presented in the literature are reviewed including large scale discrete devices and wafer-scale integrated versions. Electrostatic generators utilize the relative movement between electrically isolated charged capacitor plates to generate energy. The work done against the electrostatic force between the plates provides the harvested energy. Electrostatic-based generators are reviewed under the classifications of in-plane overlap varying, in-plane gap closing and out-of-plane gap closing; the Coulomb force parametric generator and electret-based generators are also covered. The coupling factor of each transduction mechanism is discussed and all the devices presented in the literature are summarized in tables classified by transduction type; conclusions are drawn as to the suitability of the various techniques.