C
Christian Wenger
Researcher at Leibniz Institute for Neurobiology
Publications - 148
Citations - 2579
Christian Wenger is an academic researcher from Leibniz Institute for Neurobiology. The author has contributed to research in topics: Resistive random-access memory & Dielectric. The author has an hindex of 21, co-authored 139 publications receiving 1820 citations. Previous affiliations of Christian Wenger include Leibniz Association & Innovations for High Performance Microelectronics.
Papers
More filters
Journal ArticleDOI
Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene
Grzegorz Lupina,Julia Kitzmann,Ioan Costina,Mindaugas Lukosius,Christian Wenger,Andre Wolff,Sam Vaziri,Mikael Östling,Iwona Pasternak,Aleksandra Krajewska,Wlodek Strupinski,Satender Kataria,Amit Gahoi,Max C. Lemme,Guenther Ruhl,Guenther Zoth,Oliver Luxenhofer,Wolfgang Mehr +17 more
TL;DR: Graphene layers grown on copper foils by chemical vapor deposition and transferred to silicon wafers by wet etching and electrochemical delamination methods with respect to residual submonolayer metallic contaminations are investigated.
Journal ArticleDOI
Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions
TL;DR: In this paper, a physics-based analytical model for the currentvoltage characteristics corresponding to the low and high resistive states in electroformed metal-insulator-metal structures with HfO2 layers is proposed.
Journal ArticleDOI
Filament Growth and Resistive Switching in Hafnium Oxide Memristive Devices.
TL;DR: A resistive switching model for the TiN/Ti/HfO2/TiN memristive devices is proposed, taking into account important experimental and theoretical findings, and the model is validated using 2D and 3D kinetic Monte Carlo simulation models.
Journal ArticleDOI
Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices
S. U. Sharath,Stefan Vogel,Leopoldo Molina-Luna,Erwin Hildebrandt,Christian Wenger,Jose Kurian,Michael Duerrschnabel,T. Niermann,Gang Niu,Gang Niu,P. Calka,Michael Lehmann,Hans-Joachim Kleebe,Thomas Schroeder,Lambert Alff +14 more
TL;DR: In this article, a well-controlled oxygen stoichiometry was found to be the key factor in manipulating the balance between electric field and Joule heating during formation, rupture (reset), and reformation (set) of conductive filaments in the dielectric.
Journal ArticleDOI
Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach
Giovanni Capellini,Grzegorz Kozlowski,Yuji Yamamoto,M. Lisker,Christian Wenger,Gang Niu,Peter Zaumseil,Bernd Tillack,A. Ghrib,M. de Kersauson,M. El Kurdi,Philippe Boucaud,Thomas Schroeder +12 more
TL;DR: In this paper, the tensile strain distribution and photoluminescence in Ge microstructures fabricated by means of a Si-CMOS compatible method was analyzed using a SiN stressor layer.