Christopher B. Murray

Bio: Christopher B. Murray is an academic researcher from University of Pennsylvania. The author has contributed to research in topics: Nanocrystal & Quantum dot. The author has an hindex of 88, co-authored 336 publications receiving 54410 citations. Previous affiliations of Christopher B. Murray include Universal Display Corporation & Lawrence Berkeley National Laboratory.

Electric Fields on Oxidized Silicon Surfaces: Static Polarization of PbSe Nanocrystals†

Abstract: By use of electrostatic force microscopy, we measure the charge and polarizability of 12-nm PbSe nanocrystals on n- and p-type silicon with a 2-nm thermal oxide layer. Individual nanocrystals show a dielectric constant of >100. In ambient light, the nanocrystals generate static electric fields of magnitudes too weak to be caused by a full elementary charge. These nanocrystals are statically polarized by surface electric fields generated by fixed charges in the oxide substrate. We model this effect quantitatively and assign charge locations in the oxide. Upon 442-nm photoexcitation, we observe some of the nanocrystals (∼35%) photoionize and slowly relax overnight back to their initial states. Just above a charge in the oxide, the surface electric field can approach 108 V/cm.

Effects of Post-Synthesis Processing on CdSe Nanocrystals and Their Solids: Correlation between Surface Chemistry and Optoelectronic Properties

Abstract: In this work, we report the effects on CdSe nanocrystal (NC) surface chemistry of acetone and methanol when used as the antisolvents for NC washing and as the solvents for ligand exchange of NC solids with ammonium thiocyanate (NH4SCN). We find that NCs washed with methanol have significantly fewer remaining organic ligands and lower photoluminescence quantum yield than those washed with acetone. When used as the ligand exchange solvent, methanol leaves more organic ligands and introduces fewer bound thiocyanates on the NC surface than when acetone is used. We demonstrate the effect of these different surface chemistries on NC solid optoelectronic properties through photoconductivity measurements, showing a greater photocurrent in NC solids with greater organic ligand coverage. We also show that NC washing with methanol or ligand exchange with NH4SCN in methanol removes a significant number of surface Cd atoms from the NCs, creating Cd vacancies that act as traps for recombination. Independent of the wash...

Self-organization of CdSe nanocrystallites into three-dimensional quantum dot superlattices

Abstract: The self-organization of CdSe nanocrystallites into three-dimensional semiconductor quantum dot superiattices (colloidal crystals) is demonstrated. The size and spacing of the dots within the superlattice are controlled with near atomic precision. This control is a result of synthetic advances that provide CdSe nanocrystallites that are monodisperse within the limit of atomic roughness. The methodology is not limited to semiconductor quantum dots but provides general procedures for the preparation and characterization of ordered structures of nanocrystallites from a variety of materials.

Spectrally-Resolved Dielectric Functions of Solution-Cast Quantum Dot Thin Films

Abstract: Quantum confinement is the divergence, at small crystallite size, of the electronic structure of semiconductor nanocrystals, or quantum dots, from the properties of larger crystals of the same materials. Although the extinction properties of quantum dots in the dispersed state have been extensively studied, many applications for quantum dots require the formation of a solid material which nonetheless retains a size-dependent electronic structure. The complex index of refraction (or complex dielectric function), including the extinction coefficient, is critical information for interpretation of optoelectronic measurements and use of quantum dot solids in optoelectronic devices. Here, spectroscopic ellipsometry is used to provide an all-optical method to determine the thickness, complex index, and extinction coefficient of thin films made of quantum-confined materials through the visible and near-infrared spectral ranges. The characteristic, size-dependent spectral features in the absorption of monodisperse...

Ambipolar and Unipolar PbSe Nanowire Field-Effect Transistors

Abstract: Wet-chemical methods, under rigorous air-free conditions, were used to synthesize single-crystalline 10 nm diameter PbSe nanowires (NWs), and electric-field, directed assembly was employed to align NW arrays to form the semiconducting channels of field-effect transistors (FETs). Electrical measurements revealed as-aligned NWs in bottom, gold, contact FETs are predominantly p-type ambipolar, consistent with the presentation of small barriers to electron and hole injection for this low band gap semiconductor. Exposing the NW FET to UV-ozone p-doped the NWs, illustrating the sensitivity of PbSe to oxygen, but controlled oxidation allowed the fabrication of unipolar p-type FETs. Selectively exposing the contact region of as-aligned NW FETs to low to moderate concentrations of hydrazine, commonly used to n-dope nanocrystal and NW devices, switched the predominantly p- to n-type ambipolar behavior as if the entire NW channel was exposed. At these hydrazine concentrations, charge transfer doping the metal-semiconductor interface dominates the FET characteristics. Only upon exposing the NW FETs to high hydrazine concentrations did charge transfer doping of the NW channel overcome the large intrinsic, thermally generated carrier concentration of this low band gap material, modulating the NW carrier concentration and forming unipolar n-type FETs. Pulling low vacuum removed surface hydrazine returning the predominantly p-type ambipolar FET behavior. Doping and dedoping with hydrazine were repeatedly reversible. By applying surface modification to n- and p-dope PbSe NW FETs, we fabricated the first PbSe NW inverters, demonstrating the promise of these nanostructured materials in integrated circuits.

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

Semiconductor Clusters, Nanocrystals, and Quantum Dots

Abstract: Current research into semiconductor clusters is focused on the properties of quantum dots-fragments of semiconductor consisting of hundreds to many thousands of atoms-with the bulk bonding geometry and with surface states eliminated by enclosure in a material that has a larger band gap. Quantum dots exhibit strongly size-dependent optical and electrical properties. The ability to join the dots into complex assemblies creates many opportunities for scientific discovery.

Quantum Dot Bioconjugates for Ultrasensitive Nonisotopic Detection

Abstract: Highly luminescent semiconductor quantum dots (zinc sulfide-capped cadmium selenide) have been covalently coupled to biomolecules for use in ultrasensitive biological detection. In comparison with organic dyes such as rhodamine, this class of luminescent labels is 20 times as bright, 100 times as stable against photobleaching, and one-third as wide in spectral linewidth. These nanometer-sized conjugates are water-soluble and biocompatible. Quantum dots that were labeled with the protein transferrin underwent receptor-mediated endocytosis in cultured HeLa cells, and those dots that were labeled with immunomolecules recognized specific antibodies or antigens.