Christopher R. Newman

Bio: Christopher R. Newman is an academic researcher from University of Minnesota. The author has contributed to research in topics: Organic semiconductor & Thin-film transistor. The author has an hindex of 17, co-authored 18 publications receiving 3405 citations. Previous affiliations of Christopher R. Newman include Georgia Institute of Technology & Northwestern University.

Introduction to Organic Thin Film Transistors and Design of n-Channel Organic Semiconductors

Abstract: The development of new organic semiconductors with improved performance in organic thin film transistors (OTFTs) is a major challenge for materials chemists. There is a particular need to develop air-stable n-channel (electron-conducting) organic semiconductors with performance comparable to that of p-channel (hole-conducting) materials, for organic electronics to realize the benefits of complementary circuit design, i.e., the ability to switch transistors with either positive or negative gate voltages. There have been significant advancements in the past five years. In terms of standard OTFT metrics such as the field effect mobility (μFET) and on-to-off current ratio (ION/IOFF), n-channel OTFTs have achieved performance comparable both to that of n-channel amorphous silicon TFTs and to that of the best reported p-channel (hole-conducting) OTFTs; however, issues of device stability linger. This review provides a detailed introduction to OTFTs, summarizes recent progress in the development of new n-channel...

Organic Thin Film Transistors Based on N-Alkyl Perylene Diimides: Charge Transport Kinetics as a Function of Gate Voltage and Temperature

Abstract: We report structural and electrical transport properties of a family of π-stacking soluble organic semiconductors, N,N‘-dialkyl-3,4,9,10-perylene tetracarboxylic diimides (alkyl − pentyl [1], octyl [2], and dodecyl [3]). The structures of evaporated polycrystalline films of 1−3 were studied using X-ray diffraction and atomic force microscopy. Films of 1−3 pack similarly with the direction of π−π overlap in the substrate plane. Organic thin film transistors (OTFTs) based on 1−3 deposited on SiO2 gate dielectric showed linear regime electron mobilities of 0.1, 0.6, and 0.2 cm2/(V s), respectively, corrected for contact resistance. OTFTs of 2 had saturation electron mobilities as high as 1.7 cm2/(V s) with on-to-off current ratios of 107. Variable temperature measurements were used to examine the charge transport kinetics in the range 80−300 K and revealed (1) thermally activated electron mobilities with activation energies dependent on gate voltage and (2) the presence of well-defined isokinetic points, i.e...

Gated four-probe measurements on pentacene thin-film transistors: Contact resistance as a function of gate voltage and temperature

Abstract: We describe gated four-probe measurements designed to measure contact resistance in pentacene-based organic thin-film transistors (OTFTs) The devices consisted of metal source and drain electrodes contacting a 300-A-thick pentacene film thermally deposited on Al2O3 or SiO2 dielectrics with a p-doped Si substrate serving as the gate electrode Voltage-sensing leads extending into the source-drain channel were used to monitor potentials in the pentacene film while passing current during drain voltage (VD) or gate voltage (VG) sweeps We investigated the potential profiles as a function of contact metallurgy (Pt, Au, Ag, and Ca), substrate chemistry, VG, and temperature The contact-corrected linear hole mobilities were as high as 175cm2∕Vs and the film sheet resistance and specific contact resistance were as low as 600kΩ∕◻ and 13kΩ-cm, respectively, at high gate voltages In the temperature range of 50–200K, the pentacene OTFTs displayed an activated behavior with activation energies of 15–30meV Importa

Low-voltage operation of a pentacene field-effect transistor with a polymer electrolyte gate dielectric

Abstract: Large operating voltages are often required to switch organic field-effect transistors (OFETs) on and off because commonly used gate dielectric layers provide low capacitive coupling between the gate electrode and the semiconductor. We present here a pentacene OFET gated by a solution-deposited polymer electrolyte film in which the current was modulated over four orders of magnitude using gate voltages less than 2V. A subthreshold slope of 180mV per decade of current was observed during transistor turn on at a source-drain bias of −1V; the estimated dielectric layer specific capacitance was 5μF∕cm2. Sweep rate-dependent hysteresis may be attributed to a combination of ion migration and charge carrier trapping effects. Strategies to improve switching speeds for polymer electrolyte-gated OFETs are also discussed.

Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications

Abstract: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each. Their size ranges from 2-3 to about 20 nm. What is special about this size regime that placed NCs among the hottest research topics of the last decades? The quantum mechanical coupling * To whom correspondence should be addressed. E-mail: dvtalapin@uchicago.edu. † The University of Chicago. ‡ Argonne National Lab. Chem. Rev. 2010, 110, 389–458 389

Synthesis of Conjugated Polymers for Organic Solar Cell Applications

Abstract: -phenylenevinylene)s L4. Fluorene-Based Conjugated Polymers L4.1. Fluorene-Based Copolymers ContainingElectron-Rich MoietiesM4.2. Fluorene-Based Copolymers ContainingElectron-Deficient MoietiesN4.3. Fluorene-Based Copolymers ContainingPhosphorescent ComplexesQ5. Carbazole-Based Conjugated Polymers R5.1. Poly(2,7-carbazole)-Based Polymers R5.2. Indolo[3,2-

Charge transport in organic semiconductors.

Abstract: 2.2. Materials 929 2.3. Factors Influencing Charge Mobility 931 2.3.1. Molecular Packing 931 2.3.2. Disorder 932 2.3.3. Temperature 933 2.3.4. Electric Field 934 2.3.5. Impurities 934 2.3.6. Pressure 934 2.3.7. Charge-Carrier Density 934 2.3.8. Size/molecular Weight 935 3. The Charge-Transport Parameters 935 3.1. Electronic Coupling 936 3.1.1. The Energy-Splitting-in-Dimer Method 936 3.1.2. The Orthogonality Issue 937 3.1.3. Impact of the Site Energy 937 3.1.4. Electronic Coupling in Oligoacene Derivatives 938

Semiconducting π-conjugated systems in field-effect transistors: a material odyssey of organic electronics.

Abstract: Since the discovery of highly conducting polyacetylene by Shirakawa, MacDiarmid, and Heeger in 1977, π-conjugated systems have attracted much attention as futuristic materials for the development and production of the next generation of electronics, that is, organic electronics. Conceptually, organic electronics are quite different from conventional inorganic solid state electronics because the structural versatility of organic semiconductors allows for the incorporation of functionality by molecular design. This versatility leads to a new era in the design of electronic devices. To date, the great number of π-conjugated semiconducting materials that have either been discovered or synthesized generate an exciting library of π-conjugated systems for use in organic electronics. 11 However, some key challenges for further advancement remain: the low mobility and stability of organic semiconductors, the lack of knowledge regarding structure property relationships for understanding the fundamental chemical aspects behind the structural design, and realization of desired properties. Organic field-effect transistors (OFETs) are a kind of device consisting of an organic semiconducting layer, a gate insulator layer, and three terminals (drain, source, and gate electrodes). OFETs are not only essential building blocks for the next generation of cheap and flexible organic circuits, but they also provide an important insight into the charge transport of πconjugated systems. Therefore, they act as strong tools for the exploration of the structure property relationships of πconjugated systems, such as parameters of field-effect mobility (μ, the drift velocity of carriers under unit electric field), current on/off ratio (the ratio of the maximum on-state current to the minimum off-state current), and threshold voltage (the minimum gate voltage that is required to turn on the transistor). 17 Since the discovery of OFETs in the 1980s, they have attracted much attention. Research onOFETs includes the discovery, design, and synthesis of π-conjugated systems for OFETs, device optimization, development of applications in radio frequency identification (RFID) tags, flexible displays, electronic papers, sensors, and so forth. It is beyond the scope of this review to cover all aspects of π-conjugated systems; hence, our focus will be on the performance analysis of π-conjugated systems in OFETs. This should make it possible to extract information regarding the fundamental merit of semiconducting π-conjugated materials and capture what is needed for newmaterials and what is the synthesis orientation of newπ-conjugated systems. In fact, for a new science with many practical applications, the field of organic electronics is progressing extremely rapidly. For example, using “organic field effect transistor” or “organic field effect transistors” as the query keywords to search the Web of Science citation database, it is possible to show the distribution of papers over recent years as shown in Figure 1A. It is very clear

A high-mobility electron-transporting polymer for printed transistors

Abstract: Printed electronics is a revolutionary technology aimed at unconventional electronic device manufacture on plastic foils, and will probably rely on polymeric semiconductors for organic thin-film transistor (OTFT) fabrication. In addition to having excellent charge-transport characteristics in ambient conditions, such materials must meet other key requirements, such as chemical stability, large solubility in common solvents, and inexpensive solution and/or low-temperature processing. Furthermore, compatibility of both p-channel (hole-transporting) and n-channel (electron-transporting) semiconductors with a single combination of gate dielectric and contact materials is highly desirable to enable powerful complementary circuit technologies, where p- and n-channel OTFTs operate in concert. Polymeric complementary circuits operating in ambient conditions are currently difficult to realize: although excellent p-channel polymers are widely available, the achievement of high-performance n-channel polymers is more challenging. Here we report a highly soluble ( approximately 60 g l(-1)) and printable n-channel polymer exhibiting unprecedented OTFT characteristics (electron mobilities up to approximately 0.45-0.85 cm(2) V(-1) s(-1)) under ambient conditions in combination with Au contacts and various polymeric dielectrics. Several top-gate OTFTs on plastic substrates were fabricated with the semiconductor-dielectric layers deposited by spin-coating as well as by gravure, flexographic and inkjet printing, demonstrating great processing versatility. Finally, all-printed polymeric complementary inverters (with gain 25-65) have been demonstrated.