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Christopher W. Leitz
Researcher at Massachusetts Institute of Technology
Publications - 89
Citations - 3316
Christopher W. Leitz is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Layer (electronics) & Electron mobility. The author has an hindex of 24, co-authored 79 publications receiving 3209 citations. Previous affiliations of Christopher W. Leitz include TSMC.
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Journal ArticleDOI
Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
TL;DR: In this paper, a method of controlling threading dislocation densities in Ge on Si involving graded SiGe layers and chemical-mechanical polishing (CMP) is presented.
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Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers
Michael E. Groenert,Christopher W. Leitz,Arthur J. Pitera,Vicky K. Yang,Harry Lee,Rajeev J. Ram,Eugene A. Fitzgerald +6 more
TL;DR: In this article, a GaAs/AlxGa(1−x)As quantum well laser has been demonstrated via organometallic chemical vapor deposition on relaxed graded Ge/GeSi/Si virtual substrates on Si.
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Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates
Minjoo L. Lee,Christopher W. Leitz,Z. Y. Cheng,Arthur J. Pitera,Thomas A. Langdo,Matthew T. Currie,Gianni Taraschi,Eugene A. Fitzgerald,Dimitri A. Antoniadis +8 more
TL;DR: In this article, a strained Ge channel p-type metal-oxide-semiconductor field effect transistors (p-MOSFETs) were fabricated on Si0.3Ge0.7 virtual substrates.
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Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates
Zhiyuan Cheng,Matthew T. Currie,Christopher W. Leitz,Gianni Taraschi,Eugene A. Fitzgerald,J.L. Hoyt,D.A. Antoniadas +6 more
TL;DR: In this article, the authors demonstrate electron mobility enhancement in strained-Si n-MOSFETs fabricated on relaxed Si/sub 1-x/Ge/sub x/-on-insulator (SGOI) substrates with a high Ge content of 25%.
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Hole mobility enhancements in strained Si/Si1-yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1-xGex (x<y) virtual substrates
Christopher W. Leitz,Matthew T. Currie,Minjoo L. Lee,Z. Y. Cheng,D.A. Antoniadis,Eugene A. Fitzgerald +5 more
TL;DR: In this article, the authors achieved peak hole mobility enhancement factors of 5.15 over bulk Si in metal-oxide-semiconductor field effect transistors (MOSFETs) by combining tensile strained Si surface channels and compressively strained 80% Ge buried channels grown on relaxed 50% Ge virtual substrates.