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Chunfei Li

Bio: Chunfei Li is an academic researcher. The author has contributed to research in topics: Superspace & Lattice constant. The author has an hindex of 5, co-authored 6 publications receiving 1242 citations.

Papers
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Journal ArticleDOI
TL;DR: In this paper, a superspace group determination based structure model for a one-dimensional modulated structure was proposed for homologous compounds InMO3(ZnO)m(M=In, Ga;m=integer) was observed by using a high-resoultion transmission electron microscope and described based on a four-dimensional superspace groups.

1,109 citations

Journal ArticleDOI
TL;DR: In this article, an unexpected precipitate within the spinel-type Zn2TiO4 matrix was found and the chemical formula of the precipitate was estimated to be ZnTiO3.

33 citations

Journal ArticleDOI
TL;DR: The crystal structure of a new homologous compound series, Ga(2)O(3)(ZnO)(m) (m = integer), is determined by high-resolution lattice imaging and high spatial resolution energy-dispersive X-ray spectroscopy (EDS) analysis in a field-emission analytical transmission electron microscope.
Abstract: The crystal structure of a new homologous compound series, Ga2O3(ZnO)m (m = integer), is determined by high-resolution lattice imaging and high spatial resolution energy-dispersive X-ray spectroscopy (EDS) analysis in a field-emission analytical transmission electron microscope. This work was carried out mainly on the compound with m = 9 (digallium nonazinc dodecaoxide), which belongs to the orthorhombic system and has lattice constants ao = 0.33, bo = 2.0 and co = 3.4 nm. From the extinction rules three possible space groups are selected and from them a unique space group is assigned as noncentrosymmetric Cmc21 (No. 36) on the basis of structural requirements. Ga2O3(ZnO)m is a layered structure consisting of Ga–O and m + 1 Ga/Zn–O layers stacked alternately along the c axis. It is shown that the structure of Ga2O3(ZnO)m differs from that of M2O3(ZnO)m (M = In, Fe; m = integer) reported previously. In Ga2O3(ZnO)m the Ga atoms occupy the tetrahedral sites in the Ga–O layers, whereas the M atoms in the M–O layers occupy the octahedral sites in M2O3(ZnO)m (M = In, Fe).

28 citations

Journal ArticleDOI
TL;DR: In this paper, the modulated structure of Fe 2 O 3 (ZnO) 15 (R =Fe; M =Fe) was studied by high-resolution electron microscopy and it was found that the main and satellite spots in the diffraction patterns can be indexed as h a * + k b * + l c * + m q by considering a monoclinic unit cell of a =0.57 nm.

27 citations


Cited by
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Journal ArticleDOI
23 May 2003-Science
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
Abstract: We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO 3 (ZnO) 5 , as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of ∼10 6 and a field-effect mobility of ∼80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

2,724 citations

Patent
01 Aug 2008
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

1,501 citations

Patent
25 Sep 2013
TL;DR: In this paper, a connection terminal portion is provided with a plurality of connection pads which are part of the connection terminal, each of which includes a first connection pad and a second connection pad having a line width different from that of the first one.
Abstract: An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

1,136 citations

Journal ArticleDOI
TL;DR: In this paper, a superspace group determination based structure model for a one-dimensional modulated structure was proposed for homologous compounds InMO3(ZnO)m(M=In, Ga;m=integer) was observed by using a high-resoultion transmission electron microscope and described based on a four-dimensional superspace groups.

1,109 citations

Journal ArticleDOI
TL;DR: In this paper, a range of amorphous films InGaoO3(ZnO)m (where m ≤ 4) was prepared using a pulsed-laser deposition method, which exhibited an optical bandgap of 2.8-3.0 eV, and an n-type electric conductivity of 170-400 Scm−1 at room temperature.
Abstract: With the purpose of creating ZnO-based amorphous transparent conductors, a range of amorphous films InGaoO3(ZnO)m (where m ≤ 4) was prepared using a pulsed-laser deposition method. The resulting films exhibited an optical bandgap of 2.8-3.0 eV, and an n-type electric conductivity of 170-400 Scm−1 at room temperature, displaying a slight dependence on the value of m, in which the carrier density was 1019-1020 cm−3 the electron mobili ty was 12-20 cm2 V−1 s−1 showing no p n anomaly between Hall and Seebeck coefficients. The conductivity displayed no significant dependence on the temperature ranging from 10 to 300 K. X-ray diffraction, transmission electron microscopy and extended X-ray absorption fine structure measurements confirmed that the films were amorphous phases. A combined use of bremsstrahlung isochromat spectroscopy and ultraviolet photoelectron spectroscopy revealed that the conduction band tail had a large dispersion and that the Fermi level was located at the conduction band edge. The...

1,102 citations