Chunming Niu

Bio: Chunming Niu is an academic researcher from Xi'an Jiaotong University. The author has contributed to research in topics: Carbon nanotube & Catalysis. The author has an hindex of 52, co-authored 201 publications receiving 12966 citations. Previous affiliations of Chunming Niu include Nanosys & Harvard University.

High power electrochemical capacitors based on carbon nanotube electrodes

Abstract: Carbon nanotube sheet electrodes have been prepared from catalytically grown carbon nanotubes of high purity and narrow diameter distribution, centered around 80 A. Our study shows that the electrodes are free-standing mats of entangled nanotubes with an open porous structure almost impossible to obtain with activated carbon or carbon fiber. These properties are highly desirable for high power and long cycle life electrochemical capacitors. Specific capacitances of 102 and 49 F/g were measured at 1 and 100 Hz, respectively, on a single cell device with 38 wt % H2SO4 as the electrolyte. The same cell had a power density of >8000 W/kg.

High-performance thin-film transistors using semiconductor nanowires and nanoribbons

Abstract: Thin-film transistors (TFTs) are the fundamental building blocks for the rapidly growing field of macroelectronics. The use of plastic substrates is also increasing in importance owing to their light weight, flexibility, shock resistance and low cost. Current polycrystalline-Si TFT technology is difficult to implement on plastics because of the high process temperatures required. Amorphous-Si and organic semiconductor TFTs, which can be processed at lower temperatures, but are limited by poor carrier mobility. As a result, applications that require even modest computation, control or communication functions on plastics cannot be addressed by existing TFT technology. Alternative semiconductor materials that could form TFTs with performance comparable to or better than polycrystalline or single-crystal Si, and which can be processed at low temperatures over large-area plastic substrates, should not only improve the existing technologies, but also enable new applications in flexible, wearable and disposable electronics. Here we report the fabrication of TFTs using oriented Si nanowire thin films or CdS nanoribbons as semiconducting channels. We show that high-performance TFTs can be produced on various substrates, including plastics, using a low-temperature assembly process. Our approach is general to a broad range of materials including high-mobility materials (such as InAs or InP).

Experimental Realization of the Covalent Solid Carbon Nitride

Abstract: Pulsed laser ablation of graphite targets combined with an intense, atomic nitrogen source has been used to prepare C-N thin film materials. The average nitrogen content in the films was systematically varied by controlling atomic nitrogen flux. Rutherford backscattering measurements show that up to 40 percent nitrogen can be incorporated on average into these solids under the present reaction conditions. Photoelectron spectroscopy further indicates that carbon and nitrogen form an unpolarized covalent bond in these C-N materials. Qualitative tests indicate that the C-N solids are thermally robust and hard. In addition, strong electron diffraction is observed from crystallites within the films. Notably, analysis of these diffraction data show that the only viable structure for the C-N crystallites is that of β-C3N4, a material predicted theoretically to exhibit superhardness. The experimental synthesis of this new C-N material offers exciting prospects for both basic research and engineering applications.

Medical device applications of nanostructured surfaces

Abstract: This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates for use in various medical devices, as well as methods and uses for such substrates and medical devices. In one particular embodiment, methods for enhancing cellular functions on a surface of a medical device implant are disclosed which generally comprise providing a medical device implant comprising a plurality of nanofibers (e.g., nanowires) thereon and exposing the medical device implant to cells such as osteoblasts.

Large-area nanoenabled macroelectronic substrates and uses therefor

Abstract: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

Materials for electrochemical capacitors

Abstract: Electrochemical capacitors, also called supercapacitors, store energy using either ion adsorption (electrochemical double layer capacitors) or fast surface redox reactions (pseudo-capacitors). They can complement or replace batteries in electrical energy storage and harvesting applications, when high power delivery or uptake is needed. A notable improvement in performance has been achieved through recent advances in understanding charge storage mechanisms and the development of advanced nanostructured materials. The discovery that ion desolvation occurs in pores smaller than the solvated ions has led to higher capacitance for electrochemical double layer capacitors using carbon electrodes with subnanometre pores, and opened the door to designing high-energy density devices using a variety of electrolytes. Combination of pseudo-capacitive nanomaterials, including oxides, nitrides and polymers, with the latest generation of nanostructured lithium electrodes has brought the energy density of electrochemical capacitors closer to that of batteries. The use of carbon nanotubes has further advanced micro-electrochemical capacitors, enabling flexible and adaptable devices to be made. Mathematical modelling and simulation will be the key to success in designing tomorrow's high-energy and high-power devices.

Single-layer MoS2 transistors

Abstract: Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.

Carbon Nanotubes--the Route Toward Applications

Abstract: Many potential applications have been proposed for carbon nanotubes, including conductive and high-strength composites; energy storage and energy conversion devices; sensors; field emission displays and radiation sources; hydrogen storage media; and nanometer-sized semiconductor devices, probes, and interconnects. Some of these applications are now realized in products. Others are demonstrated in early to advanced devices, and one, hydrogen storage, is clouded by controversy. Nanotube cost, polydispersity in nanotube type, and limitations in processing and assembly methods are important barriers for some applications of single-walled nanotubes.

Nanostructured materials for advanced energy conversion and storage devices

Abstract: New materials hold the key to fundamental advances in energy conversion and storage, both of which are vital in order to meet the challenge of global warming and the finite nature of fossil fuels. Nanomaterials in particular offer unique properties or combinations of properties as electrodes and electrolytes in a range of energy devices. This review describes some recent developments in the discovery of nanoelectrolytes and nanoelectrodes for lithium batteries, fuel cells and supercapacitors. The advantages and disadvantages of the nanoscale in materials design for such devices are highlighted.