Clara Sanchez-Perez

Bio: Clara Sanchez-Perez is an academic researcher from University College London. The author has contributed to research in topics: Chemical vapor deposition & Rietveld refinement. The author has an hindex of 3, co-authored 8 publications receiving 50 citations. Previous affiliations of Clara Sanchez-Perez include Technical University of Madrid & University of Oulu.

Chalcogen‒chalcogen secondary bonding interactions in trichalcogenaferrocenophanes

Abstract: The solid-state structures of all members in the series of trichalcogenaferrocenophanes [Fe(C5H4E)2E′] (E, E′ = S, Se, Te) (1–9) have been explored to understand the trends in secondary bonding interactions (SBIs) between chalcogen elements sulfur, selenium, and tellurium. To complete the series, the crystal structures of the four hitherto unknown complexes [Fe(C5H4S)2Te] (3), [Fe(C5H4Se)2S] (4), [Fe(C5H4Se)2Te] (6), and [Fe(C5H4Te)2S] (7) have been determined in this contribution. The packings of all complexes 1–9 were considered by DFT calculations at the PBE0/pob-TZVP level of theory using periodic boundary conditions. The intermolecular close contacts were considered by QTAIM and NBO analyses. The isomorphous complexes [Fe(C5H4S)2S] (1), [Fe(C5H4S)2Se] (2), and [Fe(C5H4Se)2Se] (5a) form dimers via weak interactions between the central chalcogen atoms of the two trichalcogena chains of adjacent complexes. In the second isomorphous series consisting of [Fe(C5H4Se)2S] (4) and 5b, the complexes are linked together into continuous chains by short contacts via the terminal selenium atoms. The intermolecular chalcogen–chalcogen interactions are significantly stronger in complexes [Fe(C5H4S)2Te] (3), [Fe(C5H4Se)2Te] (6), and [Fe(C5H4Te)2E′] (E′ = S, Se, Te) (7–9), which contain tellurium. The NBO comparison of donor–acceptor interactions in the lattices of [Fe(C5H4S)2S] (1), [Fe(C5H4Se)2Se] (5a and 5b), and [Fe(C5H4Te)2Te] (9) indeed shows that the n(5pTe)2 → σ*(Te–Te) interactions in 9 are the strongest. All other interaction energies are significantly smaller even in the case of tellurium. The computed natural charges of the chalcogen atoms indicate that electrostatic effects strengthen the attractive interactions in the case of all chalcogen atoms.

Precursors for Atmospheric Plasma‐Enhanced Sintering: Low‐Temperature Inkjet Printing of Conductive Copper

Abstract: Bidentate diamine and amino-alcohol ligands have been used to form solid, water-soluble, and air-stable monomeric copper complexes of the type [Cu(NH2CH2CH(R)Y)2(NO3)2] (1, R=H, Y=NH2; 2, R=H, Y=OH; 3, R=Me, Y=OH). The complexes were characterized by elemental analysis, mass spectrometry, infrared spectroscopy, thermal gravimetric analysis, and single-crystal X-ray diffraction. Irrespective of their decomposition temperature, precursors 1-3 yield highly conductive copper features [1.5×10-6 Ω m (±5×10-7 Ω m)] upon atmospheric-pressure plasma-enhanced sintering.

Aerosol-assisted route to low-E transparent conductive gallium-doped zinc oxide coatings from pre-organized and halogen-free precursor

Abstract: Thermal control in low-emission windows is achieved by the application of glazings, which are simultaneously optically transparent in the visible and reflective in the near-infrared (IR). This phenomenon is characteristic of coatings with wide optical band gaps that have high enough charge carrier concentrations for the material to interact with electromagnetic radiation in the IR region. While conventional low-E coatings are composed of sandwiched structures of oxides and thin Ag films or of fluorinated SnO2 coatings, ZnO-based glazing offers an environmentally stable and economical alternative with competitive optoelectronic properties. In this work, gallium-doped zinc oxide (GZO) coatings with properties for low-E coatings that exceed industrial standards (Tvisible > 82%; R2500 nm > 90%; λ(plasma) = 1290 nm; ρ = 4.7 × 10−4 Ω cm; Rsh = 9.4 Ω·□−1) are deposited through a sustainable and environmentally friendly halogen-free deposition route from [Ga(acac)3] and a pre-organized zinc oxide precursor [EtZnOiPr]4 (1) via single-pot aerosol-assisted chemical vapor deposition. GZO films are highly (002)-textured, smooth and compact without need of epitaxial growth. The method herein describes the synthesis of coatings with opto-electronic properties commonly achievable only through high-vacuum methods, and provides an alternative to the use of pyrophoric ZnEt2 and halogenated SnO2 coatings currently used in low-emission glazing and photovoltaic technology.

Iron-Intercalated Zirconium Diselenide Thin Films from the Low-Pressure Chemical Vapor Deposition of [Fe(η5-C5H4Se)2Zr(η5-C5H5)2]2.

Abstract: Transition metal chalcogenide thin films of the type FexZrSe2 have applications in electronic devices, but their use is limited by current synthetic techniques Here, we demonstrate the synthesis a

Chalcogen Bonding: An Overview

Abstract: In the last few decades, "unusual" noncovalent interactions like anion-π and halogen bonding have emerged as interesting alternatives to the ubiquitous hydrogen bonding in many research areas This is also true, to a somewhat lesser extent, for chalcogen bonding, the noncovalent interaction involving Lewis acidic chalcogen centers Herein, we aim to provide an overview on the use of chalcogen bonding in crystal engineering and in solution, with a focus on the recent developments concerning intermolecular chalcogen bonding in solution-phase applications In the solid phase, chalcogen bonding has been used for the construction of nano-sized structures and the self-assembly of sophisticated self-complementary arrays In solution, until very recently applications mostly focused on intramolecular interactions which stabilized the conformation of intermediates or reagents In the last few years, intermolecular chalcogen bonding has increasingly also been exploited in solution, most notably in anion recognition and transport as well as in organic synthesis and organocatalysis

Chalcogen bonding in synthesis, catalysis and design of materials

Abstract: Chalcogen bonding is a type of noncovalent interaction in which a covalently bonded chalcogen atom (O, S, Se or Te) acts as an electrophilic species towards a nucleophilic (negative) region(s) in another or in the same molecule. In general, this interaction is strengthened by the presence of an electron-withdrawing group on the electron-acceptor chalcogen atom and upon moving down in the periodic table of elements, from O to Te. Following a short discussion of the phenomenon of chalcogen bonding, this Perspective presents some demonstrative experimental observations in which this bonding is crucial for synthetic transformations, crystal engineering, catalysis and design of materials as synthons/tectons.