C
Claudio Fiegna
Researcher at University of Bologna
Publications - 165
Citations - 2685
Claudio Fiegna is an academic researcher from University of Bologna. The author has contributed to research in topics: MOSFET & Silicon. The author has an hindex of 23, co-authored 161 publications receiving 2363 citations. Previous affiliations of Claudio Fiegna include University of Ferrara & IMEC.
Papers
More filters
Journal ArticleDOI
Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain
TL;DR: In this paper, Monte Carlo simulations including quantum corrections to the potential and calibrated scattering models are used to study electronic transport in bulk and double-gate silicon-on-insulator MOSFETs with L/sub G/ down to 14-nm designed according to the 2003 International Technology Roadmap for Semiconductors.
Journal ArticleDOI
Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application
TL;DR: In this article, the electron and hole effective mobility of ultrathin SOI n-and p-MOSFETs has been investigated at different temperatures using a special test structure able to circumvent parasitic resistance effects.
Journal ArticleDOI
Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation
TL;DR: In this article, a 2-D drift-diffusion electrothermal simulation, using an electron transport model calibrated against Monte Carlo simulations at various temperatures, is employed to analyze the impact of thermal effects on the operation of nanoscale SOI n-MOSFETs.
Journal ArticleDOI
Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs
Andrea Natale Tallarico,Steve Stoffels,Paolo Magnone,Niels Posthuma,Enrico Sangiorgi,Stefaan Decoutere,Claudio Fiegna +6 more
TL;DR: In this paper, a detailed experimental investigation of the time-dependent breakdown induced by forward gate stress in GaN-based power HEMTs with a p-type gate, controlled by a Schottky metal/p-GaN junction, is presented.
Journal ArticleDOI
An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode
TL;DR: In this article, the double-gate electron mobility in ultrathin SOI MOSFETs is investigated for both single and double-and triple-gate operating modes.