Connie J. Chang-Hasnain

Bio: Connie J. Chang-Hasnain is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Grating & Vertical-cavity surface-emitting laser. The author has an hindex of 55, co-authored 420 publications receiving 13300 citations. Previous affiliations of Connie J. Chang-Hasnain include University of California & Stanford University.

A surface-emitting laser incorporating a high-index-contrast subwavelength grating

Abstract: Semiconductor diode lasers can be used in a variety of applications including telecommunications, displays, solid-state lighting, sensing and printing. Among them, vertical-cavity surface-emitting lasers1,2,3 (VCSELs) are particularly promising. Because they emit light normal to the constituent wafer surface, it is possible to extract light more efficiently and to fabricate two-dimensional device arrays. A VCSEL contains two distributed Bragg reflector (DBR) mirrors for optical feedback, separated by a very short active gain region. Typically, the reflectivity of the DBRs must exceed 99.5% in order for the VCSEL to lase. However, the realization of practical VCSELs that can be used over a broad spectrum of wavelengths has been hindered by the poor optical and thermal properties of candidate DBR materials4,5,6. In this Letter, we present surface-emitting lasers that incorporate a single-layer high-index-contrast subwavelength grating7,8 (HCG). The HCG provides both efficient optical feedback and control of the wavelength and polarization of the emitted light. Such integration reduces the required VCSEL mirror epitaxial thickness by a factor of two and increases fabrication tolerance. This work will directly influence the future designs of VCSELs, photovoltaic cells and light-emitting diodes at blue–green, 1.3–1.55 µm and mid- to far-infrared wavelengths.

Slow-light optical buffers: capabilities and fundamental limitations

Abstract: This paper presents an analysis of optical buffers based on slow-light optical delay lines. The focus of this paper is on slow-light delay lines in which the group velocity is reduced using linear processes, including electromagnetically induced transparency (EIT), population oscillations (POs), and microresonator-based photonic-crystal (PC) filters. We also consider slow-light delay lines in which the group velocity is reduced by an adiabatic process of bandwidth compression. A framework is developed for comparing these techniques and identifying fundamental physical limitations of linear slow-light technologies. It is shown that slow-light delay lines have limited capacity and delay-bandwidth product. In principle, the group velocity in slow-light delay lines can be made to approach zero. But very slow group velocity always comes at the cost of very low bandwidth or throughput. In many applications, miniaturization of the delay line is an important consideration. For all delay-line buffers, the minimum physical size of the buffer for a given number of buffered data bits is ultimately limited by the physical size of each stored bit. We show that in slow-light optical buffers, the minimum achievable size of 1 b is approximately equal to the wavelength of light in the buffer. We also compare the capabilities and limitations of a range of delay-line buffers, investigate the impact of waveguide losses on the buffer capacity, and look at the applicability of slow-light delay lines in a number of applications.

Ultrabroadband mirror using low-index cladded subwavelength grating

Abstract: We report a novel subwavelength grating that has a very broad reflection spectrum and very high reflectivity. The design is scalable for different wavelengths. It facilitates monolithic integration of optoelectronic devices at a wide range of wavelengths from visible to far infrared.

Nanolasers grown on silicon

Abstract: Based on a CMOS-compatible growth process, researchers successfully demonstrate the bottom-up integration of InGaAs nanopillar lasers onto silicon chips. The resulting nanolaser offers tiny footprints and scalability, making it particularly suited to high-density optoelectronics.

High-contrast gratings for integrated optoelectronics

Abstract: A new class of planar optics has emerged using subwavelength gratings with a large refractive index contrast, herein referred to as high-contrast gratings (HCGs). This seemingly simple structure lends itself to extraordinary properties, which can be designed top-down based on intuitive guidelines. The HCG is a single layer of high-index material that can be as thin as 15% of one wavelength. It can be designed to reflect or transmit nearly completely and with specific optical phase over a broad spectral range and/or various incident beam angles. We present a simple theory providing an intuitive phase selection rule to explain the extraordinary features. Our analytical results agree well not only with numerical simulations but also experimental data. The HCG has made easy fabrication of surface-normal optical devices possible, including vertical-cavity surface-emitting lasers (VCSELs), tunable VCSELs, and tunable filters. HCGs can be designed to result in high-quality-factor (Q) resonators with surface-normal output, which is promising for wafer-scale lasers and optical sensors. Spatially chirped HCGs are shown to be excellent focusing reflectors and lenses with very high numerical apertures. This field has seen rapid advances in experimental demonstrations and theoretical results. We provide an overview of the underlying new physics and the latest results of devices.

Optical properties of metallic films for vertical-cavity optoelectronic devices.

Abstract: We present models for the optical functions of 11 metals used as mirrors and contacts in optoelectronic and optical devices: noble metals (Ag, Au, Cu), aluminum, beryllium, and transition metals (Cr, Ni, Pd, Pt, Ti, W). We used two simple phenomenological models, the Lorentz-Drude (LD) and the Brendel-Bormann (BB), to interpret both the free-electron and the interband parts of the dielectric response of metals in a wide spectral range from 0.1 to 6 eV. Our results show that the BB model was needed to describe appropriately the interband absorption in noble metals, while for Al, Be, and the transition metals both models exhibit good agreement with the experimental data. A comparison with measurements on surface normal structures confirmed that the reflectance and the phase change on reflection from semiconductor-metal interfaces (including the case of metallic multilayers) can be accurately described by use of the proposed models for the optical functions of metallic films and the matrix method for multilayer calculations.

Metalenses at visible wavelengths: Diffraction-limited focusing and subwavelength resolution imaging.

Abstract: Subwavelength resolution imaging requires high numerical aperture (NA) lenses, which are bulky and expensive. Metasurfaces allow the miniaturization of conventional refractive optics into planar structures. We show that high-aspect-ratio titanium dioxide metasurfaces can be fabricated and designed as metalenses with NA = 0.8. Diffraction-limited focusing is demonstrated at wavelengths of 405, 532, and 660 nm with corresponding efficiencies of 86, 73, and 66%. The metalenses can resolve nanoscale features separated by subwavelength distances and provide magnification as high as 170×, with image qualities comparable to a state-of-the-art commercial objective. Our results firmly establish that metalenses can have widespread applications in laser-based microscopy, imaging, and spectroscopy.

Lead halide perovskite nanowire lasers with low lasing thresholds and high quality factors

Abstract: The remarkable performance of lead halide perovskites in solar cells can be attributed to the long carrier lifetimes and low non-radiative recombination rates, the same physical properties that are ideal for semiconductor lasers. Here, we show room-temperature and wavelength-tunable lasing from single-crystal lead halide perovskite nanowires with very low lasing thresholds (220 nJ cm(-2)) and high quality factors (Q ∼ 3,600). The lasing threshold corresponds to a charge carrier density as low as 1.5 × 10(16) cm(-3). Kinetic analysis based on time-resolved fluorescence reveals little charge carrier trapping in these single-crystal nanowires and gives estimated lasing quantum yields approaching 100%. Such lasing performance, coupled with the facile solution growth of single-crystal nanowires and the broad stoichiometry-dependent tunability of emission colour, makes lead halide perovskites ideal materials for the development of nanophotonics, in parallel with the rapid development in photovoltaics from the same materials.

Principles Of Optics Electromagnetic Theory Of Propagation Interference And Diffraction Of Light

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Optically resonant dielectric nanostructures

Abstract: The resonant modes of plasmonic nanoparticle structures made of gold or silver endow them with an ability to manipulate light at the nanoscale. However, owing to the high light losses caused by metals at optical wavelengths, only a small fraction of plasmonics applications have been realized. Kuznetsov et al. review how high-index dielectric nanoparticles can offer a substitute for these metals, providing a highly flexible and low-loss route to the manipulation of light at the nanoscale. Science , this issue p. [10.1126/science.aag2472][1] [1]: /lookup/doi/10.1126/science.aag2472