Cor Claeys

Bio: Cor Claeys is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Silicon on insulator & Silicon. The author has an hindex of 34, co-authored 560 publications receiving 6653 citations. Previous affiliations of Cor Claeys include IMEC & Université libre de Bruxelles.

Germanium-based technologies : from materials to devices

Abstract: Introduction (C. Claeys, E. Simoen). Chapter 1. Germanium Materials (B. Depuyt et al.). Chapter 2. Grown-in Defects in Ge (J. Vanhellemont et al.). Chapter 3. Diffusion and Solubility of Dopants in Germanium (E. Simoen, C. Claeys). Chapter 4. Oxygen in Silicon (P. Clauws). Chapter 5. Metals in Germanium (E. Simoen, C. Claeys). Chapter 6. Ab-initio Modelling of Defects in Germanium (R. Jones, J. Coutinho). Chapter 7. Radiation Performance of Ge Technologies (V. Markevich et al.). Chapter 8. Electrical Performance of Devices (M. Houssa et al.). Chapter 9. Device Modeling (D. Esseni et al.). Chapter 10. Nanoscale Germanium MOS Dielectrics and Junctions (C. On Chui, K.C. Saraswat). Chapter 11. Advanced Germanium MOS Devices (C. On Chui, K.C. Saraswat). Chapter 12. Alternative Ge Applications. Chapter 13. Trends and Outlook (E. Simoen, C. Claeys).

Silicon-on-insulator 'gate-all-around device'

Abstract: Describes the process fabrication and the electrical characteristics of an SOI (silicon-on-insulator) MOSFET with gate oxide and a gate electrode not only on top of the active silicon film but also underneath it. Device fabrication is simple and necessitates only a single additional mask and etch step, compared to standard SOI processing. The device shows evidence of volume inversion (inversion is observed not only in surface channels, but through the entire thickness of the silicon film). Because of the presence of two channels and because of reduced carrier scattering within the bulk of the silicon film, the transconductance of the 'gate-all-around' device is more than twice that of a conventional SOI device, and its subthreshold slope is nearly 60 mV/decade at room temperature. >

Radiation Effects in Advanced Semiconductor Materials and Devices

Abstract: Radiation Environments and Component Selection Strategy.- Basic Radiation Damage Mechanisms in Semiconductor Materials and Devices.- Displacement Damage in Group IV Semiconductor Materials.- Radiation Damage in GaAs.- Space Radiation Aspects of Silicon Bipolar Technologies.- Radiation Damage in Silicon MOS Devices.- GaAs Based Field Effect Transistors for Radiation-Hard Applications.- Opto-Electronic Components for Space.- Advanced Semiconductor Materials and Devices - Outlook.

On the flicker noise in submicron silicon MOSFETs

Abstract: An overview is given of recent theoretical concepts and experimental findings with respect to the flicker or 1/ f noise in advanced silicon MOSFETs. First, a summary will be given of the theoretical models which to date are being considered for modeling of the flicker noise phenomenon. These will be confronted with experimental evidence, from which the likely validity range of the different models and their possible limitations follow. Next, attention will be paid to the impact of technology scaling to submicron dimensions on the 1/ f noise. Finally, the effect of specific advanced processing steps, typical for submicron CMOS technology will be highlighted and guidelines for low-noise processing will be formulated.

Explaining the amplitude of RTS noise in submicrometer MOSFETs

Abstract: A simple-man's model for the random telegraph signal (RTS) noise amplitude in a submicrometer MOSFET is presented. It is shown that the channel resistance modulation for a specific trap can be expressed as a product of the normalized scattering cross section and of the fractional conductivity change. The model qualitatively describes the experimental temperature and drain current dependence of the RTS amplitude and allows evaluation of the influence of the trap location and nature on the wide scatter in values observed. >

A review of Ga2O3 materials, processing, and devices

Abstract: Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap. It is usually reported that there are five different polymorphs of Ga2O3, namely, the monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), or orthorhombic (e) structures. Of these, the β-polymorph is the stable form under normal conditions and has been the most widely studied and utilized. Since melt growth techniques can be used to grow bulk crystals of β-GaO3, the cost of producing larger area, uniform substrates is potentially lower compared to the vapor growth techniques used to manufacture bulk crystals of GaN and SiC. The performance of technologically important high voltage rectifiers and enhancement-mode Metal-Oxide Field Effect Transistors benefit from the larger critical electric field of β-Ga2O3 relative to either SiC or GaN. However, the absence of clear demonstrations of p-type doping in Ga2O3, which may be a fundamental issue resulting from the band structure, makes it very difficult to simultaneously achieve low turn-on voltages and ultra-high breakdown. The purpose of this review is to summarize recent advances in the growth, processing, and device performance of the most widely studied polymorph, β-Ga2O3. The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed. Areas where continued development is needed to fully exploit the properties of Ga2O3 are identified.

Designing Sociable Robots

Abstract: From the Publisher: Cynthia Breazeal here presents her vision of the sociable robot of the future, a synthetic creature and not merely a sophisticated tool. A sociable robot will be able to understand us, to communicate and interact with us, to learn from us and grow with us. It will be socially intelligent in a humanlike way. Eventually sociable robots will assist us in our daily lives, as collaborators and companions. Because the most successful sociable robots will share our social characteristics, the effort to make sociable robots is also a means for exploring human social intelligence and even what it means to be human. Breazeal defines the key components of social intelligence for these machines and offers a framework and set of design issues for their realization. Much of the book focuses on a nascent sociable robot she designed named Kismet. Breazeal offers a concrete implementation for Kismet, incorporating insights from the scientific study of animals and people, as well as from artistic disciplines such as classical animation. This blending of science, engineering, and art creates a lifelike quality that encourages people to treat Kismet as a social creature rather than just a machine. The book includes a CD-ROM that shows Kismet in action.

Timepix, a 65k programmable pixel readout chip for arrival time, energy and/or photon counting measurements

Abstract: A novel approach for the readout of a TPC at the future linear collider is to use a CMOS pixel detector combined with some kind of gas gain grid. A first test using the photon counting chip Medipix2 with GEM or Micromegas demonstrated the feasibility of such an approach. Although this experiment demonstrated that single primary electrons could be detected the chip did not provide information on the arrival time of the electron in the sensitive gas volume nor did it give any indication of the quantity of charge detected. The Timepix chip uses an external clock with a frequency of up to 100 MHz as a time reference. Each pixel contains a preamplifier, a discriminator with hysteresis and 4-bit DAC for threshold adjustment, synchronization logic and a 14-bit counter with overflow control. Moreover, each pixel can be independently configured in one of four different modes: masked mode: pixel is off, counting mode: 1-count for each signal over threshold, TOT mode: the counter is incremented continuously as long as the signal is above threshold, and arrival time mode: the counter is incremented continuously from the time the first hit arrives until the end of the shutter. The chip resembles very much the Medipix2 chip physically and can be readout using slightly modified versions of the various existing systems. This paper presents the main features of the new design, electrical measurements and some first images.

Scaling the Si MOSFET: from bulk to SOI to bulk

Abstract: Scaling the Si MOSFET is reconsidered. Requirements on subthreshold leakage control force conventional scaling to use high doping as the device dimension penetrates into the deep-submicrometer regime, leading to an undesirably large junction capacitance and degraded mobility. By studying the scaling of fully depleted SOI devices, the important concept of controlling horizontal leakage through vertical structures is highlighted. Several structural variations of conventional SOI structures are discussed in terms of a natural length scale to guide the design. The concept of vertical doping engineering can also be realized in bulk Si to obtain good subthreshold characteristics without large junction capacitance or heavy channel doping. >