Coskun Kocabas

Bio: Coskun Kocabas is an academic researcher from University of Manchester. The author has contributed to research in topics: Graphene & Carbon nanotube. The author has an hindex of 39, co-authored 165 publications receiving 7766 citations. Previous affiliations of Coskun Kocabas include University of Illinois at Urbana–Champaign & Bilkent University.

High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes

Abstract: †Single-walled carbon nanotubes (SWNTs) have many exceptional electronic properties. Realizing the full potential of SWNTs in realistic electronic systems requires a scalable approach to device and circuit integration. We report the use of dense, perfectly aligned arrays of long, perfectly linear SWNTs as an effective thin-film semiconductor suitable for integration into transistors and other classes of electronic devices. The large number of SWNTs enable excellent device-level performance characteristics and good device-to-device uniformity, even with SWNTs that are electronically heterogeneous. Measurements on p- and n-channel transistors that involve as many as 2,100 SWNTs reveal device-level mobilities and scaled transconductances approaching 1,000 cm 2 V 21 s 21 and 3,000 S m 21 , respectively, and with current outputs of up to 1 A in devices that use interdigitated electrodes. PMOS and CMOS logic gates and mechanically flexible transistors on plastic provide examples of devices that can be formed with this approach. Collectively, these results may represent a route to large-scale integrated nanotube electronics.

Graphene-enabled electrically switchable radar-absorbing surfaces

Abstract: Radar-absorbing materials are used in stealth technologies for concealment of an object from radar detection. Resistive and/or magnetic composite materials are used to reduce the backscattered microwave signals. Inability to control electrical properties of these materials, however, hinders the realization of active camouflage systems. Here, using large-area graphene electrodes, we demonstrate active surfaces that enable electrical control of reflection, transmission and absorption of microwaves. Instead of tuning bulk material property, our strategy relies on electrostatic tuning of the charge density on an atomically thin electrode, which operates as a tunable metal in microwave frequencies. Notably, we report large-area adaptive radar-absorbing surfaces with tunable reflection suppression ratio up to 50 dB with operation voltages <5 V. Using the developed surfaces, we demonstrate various device architectures including pixelated and curved surfaces. Our results provide a significant step in realization of active camouflage systems in microwave frequencies.

Graphene-enabled electrically switchable radar absorbing surfaces

Abstract: Radar-absorbing materials are used in stealth technologies for concealment of an object from radar detection. Resistive and/or magnetic composite materials are used to reduce the backscattered microwave signals. Inability to control electrical properties of these materials, however, hinders the realization of active camouflage systems. Here, using large-area graphene electrodes, we demonstrate active surfaces that enable electrical control of reflection, transmission and absorption of microwaves. Instead of tuning bulk material property, our strategy relies on electrostatic tuning of the charge density on an atomically thin electrode, which operates as a tunable metal in microwave frequencies. Notably, we report large-area adaptive radar-absorbing surfaces with tunable reflection suppression ratio up to 50 dB with operation voltages <5 V. Using the developed surfaces, we demonstrate various device architectures including pixelated and curved surfaces. Our results provide a significant step in realization of active camouflage systems in microwave frequencies.

Guided growth of large-scale, horizontally aligned arrays of single-walled carbon nanotubes and their use in thin-film transistors.

Abstract: A convenient process for generating large-scale, horizontally aligned arrays of pristine, single-walled carbon nanotubes (SWNTs) is described. The approach uses guided growth, by chemical vapor deposition (CVD), of SWNTs on miscut single-crystal quartz substrates. Studies of the growth reveal important relationships between the density and alignment of the tubes, the CVD conditions, and the morphology of the quartz. Electrodes and dielectrics patterned on top of these arrays yield thin-film transistors that use the SWNTs as effective thin-film semiconductors. The ability to build high-performance devices of this type suggests significant promise for large-scale aligned arrays of SWNTs in electronics, sensors, and other applications.

p-Channel, n-Channel Thin Film Transistors and p−n Diodes Based on Single Wall Carbon Nanotube Networks

Abstract: This paper demonstrates the use of arrays of networks of single wall carbon nanotubes (SWNTs) and electrical breakdown procedures for building thin film transistors (TFTs) that have good, reproducible performance and high current output. Channel length scaling analysis of these TFTs indicates that the resistance at the source/drain contacts is a small fraction of the device resistance, in the linear regime. When measured with the channel exposed to air or coated by poly(methyl methacrylate) (PMMA), these transistors operate in the unipolar p mode. By spin-coating the polymer polyethylenimine (PEI) on the channel region, these transistors can be switched to operate in the unipolar n mode. Patterning the exposure of a single channel to PMMA and PEI yields p -n diodes. These results indicate that SWNT-TFTs can provide the building blocks of complex complementary circuits for a range of applications in macroelectronics, sensors, and other systems.

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

The chemistry of graphene oxide

Abstract: The chemistry of graphene oxide is discussed in this critical review Particular emphasis is directed toward the synthesis of graphene oxide, as well as its structure Graphene oxide as a substrate for a variety of chemical transformations, including its reduction to graphene-like materials, is also discussed This review will be of value to synthetic chemists interested in this emerging field of materials science, as well as those investigating applications of graphene who would find a more thorough treatment of the chemistry of graphene oxide useful in understanding the scope and limitations of current approaches which utilize this material (91 references)

Large-scale pattern growth of graphene films for stretchable transparent electrodes

Abstract: Problems associated with large-scale pattern growth of graphene constitute one of the main obstacles to using this material in device applications. Recently, macroscopic-scale graphene films were prepared by two-dimensional assembly of graphene sheets chemically derived from graphite crystals and graphene oxides. However, the sheet resistance of these films was found to be much larger than theoretically expected values. Here we report the direct synthesis of large-scale graphene films using chemical vapour deposition on thin nickel layers, and present two different methods of patterning the films and transferring them to arbitrary substrates. The transferred graphene films show very low sheet resistance of approximately 280 Omega per square, with approximately 80 per cent optical transparency. At low temperatures, the monolayers transferred to silicon dioxide substrates show electron mobility greater than 3,700 cm(2) V(-1) s(-1) and exhibit the half-integer quantum Hall effect, implying that the quality of graphene grown by chemical vapour deposition is as high as mechanically cleaved graphene. Employing the outstanding mechanical properties of graphene, we also demonstrate the macroscopic use of these highly conducting and transparent electrodes in flexible, stretchable, foldable electronics.

Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material

Abstract: The integration of novel materials such as single-walled carbon nanotubes and nanowires into devices has been challenging, but developments in transfer printing and solution-based methods now allow these materials to be incorporated into large-area electronics1,2,3,4,5,6. Similar efforts are now being devoted to making the integration of graphene into devices technologically feasible7,8,9,10. Here, we report a solution-based method that allows uniform and controllable deposition of reduced graphene oxide thin films with thicknesses ranging from a single monolayer to several layers over large areas. The opto-electronic properties can thus be tuned over several orders of magnitude, making them potentially useful for flexible and transparent semiconductors or semi-metals. The thinnest films exhibit graphene-like ambipolar transistor characteristics, whereas thicker films behave as graphite-like semi-metals. Collectively, our deposition method could represent a route for translating the interesting fundamental properties of graphene into technologically viable devices.