Bio: Cosmin Romanitan is an academic researcher from University of Bucharest. The author has contributed to research in topics: Materials science & Thin film. The author has an hindex of 8, co-authored 59 publications receiving 224 citations.
TL;DR: In this work, a significant improvement of the classical silicon nanowire (SiNW)-based photodetector was achieved through the realization of core-shell structures using newly designed GQDPEIs via simple solution processing.
Abstract: In this work, a significant improvement of the classical silicon nanowire (SiNW)-based photodetector was achieved through the realization of core–shell structures using newly designed GQDPEIs via simple solution processing. The poly(ethyleneimine) (PEI)-assisted synthesis successfully tuned both optical and electrical properties of graphene quantum dots (GQDs) to fulfill the requirements for strong yellow photoluminescence emission along with large band gap formation and the introduction of electronic states inside the band gap. The fabrication of a GQDPEI-based device was followed by systematic structural and photoelectronic investigation. Thus, the GQDPEI/SiNW photodetector exhibited a large photocurrent to dark current ratio (Iph/Idark up to ∼0.9 × 102 under 4 V bias) and a remarkable improvement of the external quantum efficiency values that far exceed 100%. In this frame, GQDPEIs demonstrate the ability to arbitrate both charge-carrier photogeneration and transport inside a heterojunction, leading to...
TL;DR: The achievement of an easy scalable technology for solid state supercapacitors on silicon, with excellent electrochemical properties, is demonstrated, comparable to many of the best high-power and/or high-energy carbon-based super capacitors, their figures of merit matching under battery-like supercapACitor behaviour.
Abstract: The challenge for conformal modification of the ultra-high internal surface of nanoporous silicon was tackled by electrochemical polymerisation of 2,6-dihydroxynaphthalene using cyclic voltammetry or potentiometry and, notably, after the thermal treatment (800 °C, N2, 4 h) an assembly of interconnected networks of graphene strongly adhering to nanoporous silicon matrix resulted. Herein we demonstrate the achievement of an easy scalable technology for solid state supercapacitors on silicon, with excellent electrochemical properties. Accordingly, our symmetric supercapacitors (SSC) showed remarkable performance characteristics, comparable to many of the best high-power and/or high-energy carbon-based supercapacitors, their figures of merit matching under battery-like supercapacitor behaviour. Furthermore, the devices displayed high specific capacity values along with enhanced capacity retention even at ultra-high rates for voltage sweep, 5 V/s, or discharge current density, 100 A/g, respectively. The cycling stability tests performed at relatively high discharge current density of 10 A/g indicated good capacity retention, with a superior performance demonstrated for the electrodes obtained under cyclic voltammetry approach, which may be ascribed on the one hand to a better coverage of the porous silicon substrate and, on the other hand, to an improved resilience of the hybrid electrode to pore clogging.
TL;DR: Comparing the two composites, it was found that the ABS/ZnO microcomposite structures had higher overall mechanical strength over ABS/ ZnO nanostructures.
Abstract: In order to expand the mechanical and physical capabilities of 3D-printed structures fabricated via commercially available 3D printers, nanocomposite and microcomposite filaments were produced via melt extrusion, 3D-printed and evaluated The scope of this work is to fabricate physically and mechanically improved nanocomposites or microcomposites for direct commercial or industrial implementation while enriching the existing literature with the methodology applied Zinc Oxide nanoparticles (ZnO nano) and Zinc Oxide micro-sized particles (ZnO micro) were dispersed, in various concentrations, in Acrylonitrile Butadiene Styrene (ABS) matrices and printable filament of ~175mm was extruded The composite filaments were employed in a commercial 3D printer for tensile and flexion specimens’ production, according to international standards Results showed a 14% increase in the tensile strength at 5% wt concentration in both nanocomposite and microcomposite materials, when compared to pure ABS specimens Furthermore, a 153% increase in the flexural strength was found in 05% wt for ABS/ZnO nano, while an increase of 17% was found on 5% wt ABS/ZnO micro Comparing the two composites, it was found that the ABS/ZnO microcomposite structures had higher overall mechanical strength over ABS/ZnO nanostructures
TL;DR: This letter reports for the first time very large phase shifts of microwaves in the 1-10 GHz range, in a 1 mm long gold coplanar interdigitated structure deposited over a 6 nm Hf x Zr1-x O2 ferroelectric grown directly on a high resistivity silicon substrate.
Abstract: In this letter, we report for the first time very large phase shifts of microwaves in the 1-10 GHz range, in a 1 mm long gold coplanar interdigitated structure deposited over a 6 nm Hf x Zr1-x O2 ferroelectric grown directly on a high resistivity silicon substrate. The phase shift is larger than 60° at 1 GHz and 13° at 10 GHz at maximum applied DC voltages of ±3 V, which can be supplied by a simple commercial battery. In this way, we demonstrate experimentally that the new ferroelectrics based on HfO2 could play an important role in the future development of wireless communication systems for very low power applications.
TL;DR: In this article, the structural changes in the molecular binding between ZnO and Ca, Fourier Transform Infrared spectroscopy (FTIR), Micro-Raman Spectroscopy and X-ray diffraction (XRD) were performed.
Abstract: ZnO thin films were synthesized using sol–gel method at 0.25 and 0.5 M molarity concentration. Moreover, the obtained thin films were Calcium-doped with 1 and 5 at% concentration. In order to investigate the structural changes in the molecular binding between ZnO and Ca, Fourier Transform Infrared spectroscopy (FTIR), Micro-Raman Spectroscopy and X-ray diffraction (XRD) were performed. The surface morphology and the chemical constituents distribution of the films were studied through Scanning Electron Microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX) and Atomic Force Microscopy (AFM), respectively. The optical and electrical properties were studied by UV–Vis spectroscopy, Spectral ellipsometry and electrical I–V measurements. The results show that the properties of prepared ZnO thin films were strongly influenced by the molarity concentration and Ca-dopant. The band shape obtained at FTIR is a band attributable to metal oxide bonds and can be attributed to the vibrational assignment of Zn–O bond. SEM-EDX and AFM investigations reveal an enlarged surface area due to the porous nature of the thin films and confirm the presence of Ca in the ZnO matrix. The XRD and Raman analyses indicate the achievement of the high crystalline quality and confirm the wurtzite phase of the synthesized thin films. The films transmittance spectra indicate values between 81 and 93% in the 350–800 nm wavelength region. We further performed I–V characteristics, resulting that Ca has a different impact of the electrical performances.
TL;DR: The differences between G QDs and other nanomaterials, including their nanocarbon cousins, are emphasized, and the unique advantages of GQDs for specific applications are highlighted.
Abstract: Graphene quantum dots (GQDs) that are flat 0D nanomaterials have attracted increasing interest because of their exceptional chemicophysical properties and novel applications in energy conversion and storage, electro/photo/chemical catalysis, flexible devices, sensing, display, imaging, and theranostics. The significant advances in the recent years are summarized with comparative and balanced discussion. The differences between GQDs and other nanomaterials, including their nanocarbon cousins, are emphasized, and the unique advantages of GQDs for specific applications are highlighted. The current challenges and outlook of this growing field are also discussed.
TL;DR: GQDs are considered new kind of quantum dots (QDs), as they are chemically and physically stable because of its intrinsic inert carbon property as discussed by the authors, and they are environmentally friendly due to its non-toxic and biologically inert properties.
Abstract: Graphene quantum dots (GQDs) have been widely studied in recent years due to its unique structure-related properties, such as optical, electrical and optoelectrical properties. GQDs are considered new kind of quantum dots (QDs), as they are chemically and physically stable because of its intrinsic inert carbon property. Furthermore, GQDs are environmentally friendly due to its non-toxic and biologically inert properties, which have attracted worldwide interests from academic and industry. In this review, a number of GQDs preparation methods, such as hydrothermal method, microwave-assisted hydrothermal method, soft-template method, liquid exfoliation method, metal-catalyzed method and electron beam lithography method etc., are summarized. Their structural, morphological, chemical composition, optical, electrical and optoelectrical properties have been characterized and studied. A variety of elemental dopant, such as nitrogen, sulphur, chlorine, fluorine and potassium etc., have been doped into GQDs to diversify the functions of the material. The control of its size and shape has been realized by means of preparation parameters, such as synthesis temperature, growth time, source concentration and catalyst etc. As far as energy level engineering is concerned, the elemental doping has shown an introduction of energy level in GQDs which may tune the optical, electrical and optoelectrical properties of the GQDs. The applications of GQDs in biological imaging, optoelectrical detectors, solar cells, light emitting diodes, fluorescent agent, photocatalysis, and lithium ion battery are described. GQD composites, having optimized contents and properties, are also discussed to extend the applications of GQDs. Basic physical and chemical parameters of GQDs are summarized by tables in this review, which will provide readers useful information.
TL;DR: In this article, top-down and bottom-up strategies for the fabrication of GQDs, mainly containing oxidative cleavage, the hydrothermal or solvothermal method, the ultrasonic-assisted or microwave-assisted process, electrochemical oxidation, controllable synthesis, and carbonization from small molecules or polymers, are discussed.
Abstract: Abstract As a new class of fluorescent carbon materials, graphene quantum dots (GQDs) have attracted tremendous attention due to their outstanding properties and potential applications in biological, optoelectronic, and energy-related fields. Herein, top-down and bottom-up strategies for the fabrication of GQDs, mainly containing oxidative cleavage, the hydrothermal or solvothermal method, the ultrasonic-assisted or microwave-assisted process, electrochemical oxidation, controllable synthesis, and carbonization from small molecules or polymers, are discussed. Different methods are presented in order to study their characteristics and their influence on the final properties of the GQDs. The respective advantages and disadvantages of the methods are introduced. With regard to some important or novel methods, the mechanisms are proposed for reference. Moreover, recent exciting progresses on the applications of GQD, such as sensors, bio-imaging, drug carriers, and solar cells are highlighted. Finally, a brief outlook is given, pointing out the issues still to be settled for further development. We believe that new preparation methods and properties of GQDs will be found, and GQDs will play more important roles in novel devices and various applications.
TL;DR: In this paper, recent advances in the ferroelectric properties of HZO thin films, including doping effects, mechanical stress effects, interface effects, and film thickness effects, are comprehensively reviewed.
Abstract: Ferroelectricity in HfO2-based materials, especially Hf0.5Zr0.5O2 (HZO), is today one of the most attractive topics because of its wide range of applications in ferroelectric random-access memory, ferroelectric field-effect transistors, ferroelectric tunneling junctions, steep-slope devices, and synaptic devices. The main reason for this increasing interest is that, when compared with conventional ferroelectric materials, HZO is compatible with complementary metal–oxide–semiconductor flow [even back-end of the line thermal budget] and can exhibit robust ferroelectricity even at extremely thin (< 10 nm) thicknesses. In this report, recent advances in the ferroelectric properties of HZO thin films since the first report in 2011, including doping effects, mechanical stress effects, interface effects, and ferroelectric film thickness effects, are comprehensively reviewed.
01 Jan 2016