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D. Becerra

Bio: D. Becerra is an academic researcher from National Autonomous University of Mexico. The author has contributed to research in topics: Thin film & Adsorption. The author has an hindex of 2, co-authored 2 publications receiving 100 citations.

Papers
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Journal ArticleDOI
TL;DR: In this article, a thin film solar cell of CdS/Sb 2 S 3 /C-Ag was developed on glass substrates coated with SnO 2 :F (FTO) by thermal evaporation of Sb 2S 3 powder.

99 citations

Journal ArticleDOI
TL;DR: Theoretical analysis showed that the high optical absorption coefficient of Bi 2 S 3 results in a light-generated current density (J L ) of >20 mA/cM 2 for a c-Si(200 nm)Bi z S 3 (300 nm) stack at a combined film thickness of 500 nm, and with an open circuit voltage (V oc ) of nearly 600 mV.
Abstract: Feasibility of combining p-type crystalline Si (c-Si) of 200―8000 nm in thickness with an n-type bismuth sulfide (Bi 2 S 3 ) thin film of 300 nm in thickness for thin film solar cell is analyzed. Theoretical analysis shows that the high optical absorption coefficient (10 5 cm ―1 ) of Bi 2 S 3 results in a light-generated current density (J L ) of >20 mA/cM 2 for a c-Si(200 nm)Bi z S 3 (300 nm) stack at a combined film thickness of 500 nm, and with an open circuit voltage (V oc ) of nearly 600 mV. Proof-of-concept cell structures were prepared on p-type c-Si wafers of electrical resistivity 1 Ω cm. Any oxide layer at the interface significantly deteriorates the cell parameters. In a cell prepared using evaporated n-Bi 2 S 3 on (p) c-Si, J sc is 3 mA/cm 2 ; V oc is 360 mV; and η is 0.5%; which improved to: 7.2 mA/cm 2 , 485 mV and 1.7%, respectively, after heating the cell in forming gas. A cell with an Sb 2 S 3 (40 nm) thin film as an antireflective coating on Bi 2 S 3 , produced: J sc of 10 mA/cm 2 ; V oc of 480 mV; and η of 2.4%. Theoretical simulation suggests that better cell fabrication could lead to: J sc of 26 mA/cm 2 ; V oc of 600 mV; and η of 10%.

29 citations

Journal ArticleDOI
TL;DR: In this article , pristine and Pt-catalyzed SnO 2 hybrid structures were designed over porous Si (p-Si) substrates via chemical bath deposition, and significant sensing response was obtained at low operating temperature (∼100°C).
Abstract: In this work, pristine and Pt-catalyzed SnO 2 hybrid structures were designed over porous Si (p-Si) substrates via chemical bath deposition. CO 2 gas sensing properties such as sensing response, response/ recovery time were studied as a function of different platinum concentrations and compared with the devices prepared over c-Si substrates. TEM analysis confirms the nanometric size of ∼2.5 ​nm of the Pt nanoparticles. XRD analysis for the hybrid nanostructures confirms the presence of tetragonal structure of SnO 2 . SEM and EDS analysis of the SnO 2 nanostructures confirms the spherical morphology and the composition respectively. Significant sensing response of hybrid nanostructures could be obtained at low operating temperature (∼100 ​°C). At an optimal concentration of PtNPs, the sensitivity of pSi based hybrid structures increased by a factor of ∼7.5 compared to the ones on crystalline-Si. The higher sensitivity is possibly due to the charge carrier exchange enhancement in the Pt–SnO 2 interface in addition to the high surface area provided by p-Si. The increment in the p-Si surface area also led to the higher population of active sites and the charge transfer leads to a more efficient dissociation of adsorbed H 2 O molecules, which further served as active sites for CO 2 detection. The CO 2 gas sensing mechanism with respect to different substrate and Pt addition is explained in terms of adsorbed OH − ions reacting with CO 2 molecules at the SnO 2 surface. The utilization of the proposed hybrid structures with high surface area favors the miniaturization of possible device fabrication for real-life applications. • Simple CO 2 sensing device from Pt-catalyzed SnO 2 thin films onto porous-silicon. • Sensing response of p-Si/SnO 2 –Pt based CO 2 sensors increased by a factor of ∼7.5 • Device demonstrates efficient operation at low temperatures (100 ​°C). • At very low platinum concentration device exhibits a sensitivity of ∼19. • Simple fabrication of silicon based VLSI integrable devices with potential applications.

1 citations


Cited by
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Journal ArticleDOI
TL;DR: This review looks beyond MAPI to other ns2 solar absorbers, with the aim of identifying those materials likely to achieve high efficiencies, and discusses the ideal properties essential to produce highly efficient solar cells.

358 citations

Journal ArticleDOI
16 May 2018-Joule
TL;DR: In this paper, the authors conduct a systematic analysis of Sb 2 S 3 -based photovoltaic devices, highlighting major advancements and most prominent limitations of this technology and provide a roadmap for further Sb2 S 3 technology development.

325 citations

Journal ArticleDOI
TL;DR: In this paper, a novel Sb2S3/ultrathin g-C3N4 sheets heterostructures embedded with quantum dots (CNS) was successfully fabricated via a facile hydrothermal process.
Abstract: In recent years, exploiting novel photocatalysts with a broad range of wavelengths photoresponse is undoubtedly interesting in photocatalytic field. Here, a novel Sb2S3/ultrathin g-C3N4 sheets heterostructures embedded with g-C3N4 quantum dots (CNS) was successfully fabricated via a facile hydrothermal process. The samples were systematically characterized by the field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV–vis-NIR diffuse reflection spectroscopy (UV-vis-NIR DRS) and photoluminescence (PL) spectroscopy. It is indicated that the composites have fast electron transport and enhanced solar light absorption. Moreover, the CNS composite exhibits a significant photoelectric conversion property in near-infrared (NIR) wavelength range. The photocatalytic activities of the samples were evaluated by the degradation of methyl orange (MO) upon NIR irradiation. The photodegradation rate of the optimal CNS for MO was 0.0103 min−1, about 2.6 times higher than that of pure Sb2S3. The improved NIR photocatalytic activity may base on the improved absorption in the NIR region, efficient electron-hole separation and the up-converted PL property of g-C3N4 quantum dots (CNQD).

220 citations

Journal ArticleDOI
TL;DR: In this article, a thin film of antimony sulfide (Sb2S3) was obtained by rapid thermal evaporation (RTE) rather than conventional chemical bath deposition or atomic layer deposition based methods.

122 citations