D. D. Peck

Bio: D. D. Peck is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Quantum tunnelling & Quantum well. The author has an hindex of 3, co-authored 4 publications receiving 1131 citations.

Resonant tunneling through quantum wells at frequencies up to 2.5 THz

Abstract: Resonant tunneling through a single quantum well of GaAs has been observed. The current singularity and negative resistance region are dramatically improved over previous results, and detecting and mixing have been carried out at frequencies as high as 2.5 THz. Resonant tunneling features are visible in the conductance‐voltage curve at room temperature and become quite pronounced in the I‐V curves at low temperature. The high‐frequency results, measured with far IR lasers, prove that the charge transport is faster than about 10−13 s. It may now be possible to construct practical nonlinear devices using quantum wells at millimeter and submillimeter wavelengths.

Quantum well oscillators

Abstract: Oscillations have been observed for the first time from double barrier resonant tunneling structures. By eliminating impurities from the wells, we have been able to increase the tunneling current density by a factor of nearly 100. With the attendant increase in gain and improved impedance match to the resonant circuit, the devices oscillated readily in the negative resistance region. Oscillator output power of 5 μW and frequencies up to 18 GHz have been achieved with a dc to rf efficiency of 2.4% at temperatures as high as 200 K. It is shown that higher frequencies and higher powers can be expected.

Resonant Tunneling through quantum wells up to 2.5 THz

Abstract: We have observed resonant tunneling through a single quantum well of GaAs between two barriers of GaAlAs. The current singularity and negative resistance region are dramatically improved over previous results. Approximate agreement with a simple theory has been obtained. Detection and mixing experiments carried out at frequencies as high as 2.5 THz show the intrinsic response time to be less than 10−13 sec.

Transport in Nanostructures

Abstract: 1. Introduction 2. Quantum confined systems 3. Transmission in nanostructures 4. Quantum dots and single electron phenomena 5. Interference in diffusive transport 6. Temperature decay of fluctuations 7. Non-equilibrium transport and nanodevices.

Transport in nanostructures

Abstract: 1 Introduction 2 Quantum confined systems 3 Transmission in nanostructures 4 Quantum dots and single electron phenomena 5 Interference in diffusive transport 6 Temperature decay of fluctuations 7 Non-equilibrium transport and nanodevices

Quantum confinement and host/guest chemistry: probing a new dimension.

Abstract: Nanoparticulate metals and semiconductors that have atomic arrangements at the interface of molecular clusters and "infinite" solid-state arrays of atoms have distinctive properties determined by the extent of confinement of highly delocalized valence electrons. At this interface, the total number of atoms and the geometrical disposition of each atom can be used to significantly modify the electronic and photonic response of the medium. In addition to teh novel inherent physical properties of the quantum-confined moieties, their "packaging" into nanocomposite bulk materials can be used to define the confinement surface states and environment, intercluster interactions, the quantum-confinement geometry, and the effective charge-carrier density of the bulk. Current approaches for generating nanostructures of conducting materials are briefly reviewed, especially the use of three-dimensional crystalline superlattices as hosts for quantum-confined semiconductor atom arrays (such as quantum wires and dots) with controlled inter-quantum-structure tunneling.

Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications

Abstract: New results on the physics of tunneling in quantum well heterostructures and its device applications are discussed. Following a general review of the field in the Introduction, in the second section resonant tunneling through double barriers is investigated. Recent conflicting interpretations of this effect in terms of a Fabry-Perot mechanism or sequential tunneling are reconciled via an analysis of scattering. It is shown that the ratio of the intrinsic resonance width to the total scattering width (collision broadening) determines which of the two mechanisms controls resonant tunneling. The role of symmetry is quantitatively analyzed and two recently proposed resonant tunneling transistor structures are discussed. The third section deals with perpendicular transport in superlattices. A simple expression for the low field mobility in the miniband conduction regime is derived; localization effects, hopping conduction, and effective mass filtering are discussed. In the following section, experimental results on tunneling superlattice photoconductors based on effective mass filtering are presented. In the fifth section, negative differential resistance resulting from localization in a high electric field is discussed. In the last section, the observation of sequential resonant tunneling in superlattices is reported. We point out a remarkable analogy between this phenomenon and paramagnetic spin resonance. New tunable infrared semiconductor lasers and wavelength selective detectors based on this effect are discussed.

Room-temperature negative differential resistance in nanoscale molecular junctions

Abstract: Molecular devices are reported utilizing active self-assembled monolayers containing the nitroamine [2′-amino-4,4′-di(ethynylphenyl)-5′-nitro-1-benzenethiolate] or the nitro compound [4,4′-di(ethynylphenyl)-2′-nitro-1-benzenethiolate] as the active components Both of these compounds have active redox centers Current–voltage measurements of the devices exhibited negative differential resistance at room temperature and an on–off peak-to-valley ratio in excess of 1000:1 at low temperature