D. J. Eaglesham

Bio: D. J. Eaglesham is an academic researcher from Alcatel-Lucent. The author has contributed to research in topics: Ion implantation & Silicon. The author has an hindex of 38, co-authored 77 publications receiving 5960 citations. Previous affiliations of D. J. Eaglesham include AT&T.

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Abstract: Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5×1012 to 1×1014/cm2 evolves into a distribution of {311} interstitial agglomerates during the initial annealing stages at 670–815 °C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of {311} defects during Ostwald ripening with an activation energy of 3.8±0.2 eV. The excess interstitials drive substitutional B into electric...

Implantation and transient B diffusion in Si: The source of the interstitials

Abstract: Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing, due to Si interstitials being emitted from the region of the implant damage. The structural source of these interstitials has not previously been identified. Quantitative transmission electron microscopy measurements of extended defects are used to demonstrate that TED is caused by the emission of interstitials from specific defects. The defects are rodlike defects running along 〈110〉 directions, which consist of interstitials precipitating on {311} planes as a single monolayer of hexagonal Si. We correlate the evaporation of {311} defects during annealing at 670 and 815 °C with the length of the diffusion transient, and demonstrate a link between the number of interstitials emitted by the defects, and the flux of interstitials driving TED. Thus not only are {311} defects contributing to the interstitial flux, but the contribution attributable to {311} defect evaporation is sufficient to explain the whole ...

Equilibrium shape of Si.

Abstract: Small voids are formed in Si by MeV He implantation and annealing. We measure the equilibrium shape of these voids and hence extract the surface energy curve γ(θ) for Si. γ(111) is the global minimum, with γ(100)≃1.1 γ(111) and all other cusps on the surface being relatively small. The experimental γ(θ) is compared with theoretical predictions and earlier experiments. Step energies obtained from dγ/dθ are ≃28±10 meV/atom on (100) and ≃140±20 meV/atom on (111); these values are compared with scanning tunneling microscopy experiments

Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon

Abstract: The effect of impurity coimplantation in MeV erbium‐implanted silicon is studied. A significant increase in the intensity of the 1.54‐μm Er3+ emission was observed for different coimplants. This study shows that the Er3+ emission is observed if erbium can form an impurity complex in silicon. The influence of these impurities on the Er3+ photoluminescence spectrum is demonstrated. Furthermore we show the first room‐temperature photoluminescence spectrum of erbium in crystalline silicon.

On the mechanism of the hydrogen-induced exfoliation of silicon

Abstract: We have investigated the fundamental mechanism underlying the hydrogen-induced exfoliation of silicon, using a combination of spectroscopic and microscopic techniques. We have studied the evolution of the internal defect structure as a function of implanted hydrogen concentration and annealing temperature and found that the mechanism consists of a number of essential components in which hydrogen plays a key role. Specifically, we show that the chemical action of hydrogen leads to the formation of (100) and (111) internal surfaces above 400 °C via agglomeration of the initial defect structure. In addition, molecular hydrogen is evolved between 200 and 400 °C and subsequently traps in the microvoids bounded by the internal surfaces, resulting in the build-up of internal pressure. This, in turn, leads to the observed “blistering” of unconstrained silicon samples, or complete layer transfer for silicon wafers joined to a supporting (handle) wafer which acts as a mechanical “stiffener.”

Fundamentals of Modern VLSI Devices

Abstract: Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

Gan : processing, defects, and devices

Abstract: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation, and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes, and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Semiconductor device, and manufacturing method thereof

Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Alternative dielectrics to silicon dioxide for memory and logic devices

Abstract: The silicon-based microelectronics industry is rapidly approaching a point where device fabrication can no longer be simply scaled to progressively smaller sizes. Technological decisions must now be made that will substantially alter the directions along which silicon devices continue to develop. One such challenge is the need for higher permittivity dielectrics to replace silicon dioxide, the properties of which have hitherto been instrumental to the industry's success. Considerable efforts have already been made to develop replacement dielectrics for dynamic random-access memories. These developments serve to illustrate the magnitude of the now urgent problem of identifying alternatives to silicon dioxide for the gate dielectric in logic devices, such as the ubiquitous field-effect transistor.

Erbium implanted thin film photonic materials

Abstract: Erbium doped materials are of great interest in thin film integrated optoelectronic technology, due to their Er3+ intra-4f emission at 1.54 μm, a standard telecommunication wavelength. Er-doped dielectric thin films can be used to fabricate planar optical amplifiers or lasers that can be integrated with other devices on the same chip. Semiconductors, such as silicon, can also be doped with erbium. In this case the Er may be excited through optically or electrically generated charge carriers. Er-doped Si light-emitting diodes may find applications in Si-based optoelectronic circuits. In this article, the synthesis, characterization, and application of several different Er-doped thin film photonic materials is described. It focuses on oxide glasses (pure SiO2, phosphosilicate, borosilicate, and soda-lime glasses), ceramic thin films (Al2O3, Y2O3, LiNbO3), and amorphous and crystalline silicon, all doped with Er by ion implantation. MeV ion implantation is a technique that is ideally suited to dope these materials with Er as the ion range corresponds to the typical micron dimensions of these optical materials. The role of implantation defects, the effect of annealing, concentration dependent effects, and optical activation are discussed and compared for the various materials.