D
D. J. H. Lambert
Researcher at University of Texas at Austin
Publications - 39
Citations - 1620
D. J. H. Lambert is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Chemical vapor deposition & Metalorganic vapour phase epitaxy. The author has an hindex of 20, co-authored 39 publications receiving 1586 citations. Previous affiliations of D. J. H. Lambert include United States Military Academy.
Papers
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Journal ArticleDOI
GaN avalanche photodiodes
J. C. Carrano,D. J. H. Lambert,C. J. Eiting,C. J. Collins,T. Li,S. Wang,B. Yang,Ariane L. Beck,Russell D. Dupuis,Joe C. Campbell +9 more
TL;DR: In this paper, the electrical and optical properties of photodiodes fabricated in GaN grown by metalorganic chemical vapor deposition have been investigated, and it is shown that small-area devices exhibit stable gain with no evidence of microplasmas.
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Back illuminated AlGaN solar-blind photodetectors
D. J. H. Lambert,Michael M. Wong,U. Chowdhury,C. J. Collins,T. Li,Hoyeong Kwon,B. S. Shelton,Tongtong Zhu,J. C. Campbell,Russell D. Dupuis +9 more
TL;DR: In this article, the growth, fabrication, and characterization of AlxGa1−xN (0⩽x⩾0.60) heteroepitaxial back-illuminated solar-blind p-i-n photodiodes on (0001) sapphire substrates were reported.
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Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition
Zuzanna Liliental-Weber,Mourad Benamara,W. Swider,Jack Washburn,I. Grzegory,S. Porowski,D. J. H. Lambert,C. J. Eiting,Russell D. Dupuis +8 more
TL;DR: In this paper, the Mg dopant was found to be responsible for the formation of hollow defects in GaN:Mg grown on sapphire substrates using metal-organic chemical-vapor deposition (MOCVD) with Mg-delta doping.
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High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching
TL;DR: In this paper, a high-voltage GaN vertical Schottky-barrier rectifier with a 5-μm-thick i region, and processed using reactive-ion etching, exhibited a reverse breakdown voltage of −450 V (at 10 mA/cm2) and an on-resistance of 23 mΩ
Journal ArticleDOI
Low-noise back-illuminated Al/sub x/Ga/sub 1-x/N-based p-i-n solar-blind ultraviolet photodetectors
T. Li,D. J. H. Lambert,Michael M. Wong,C. J. Collins,B. Yang,Ariane L. Beck,U. Chowdhury,R.D. Durpuis,Joe C. Campbell +8 more
TL;DR: In this paper, the authors report the growth, fabrication and characterization of Al/sub 0.4/Ga/s 0.6/N-Al/sub-0.4-N back-illuminated, solar-blind p-i-n photodiodes.