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D. J. Olsen

Bio: D. J. Olsen is an academic researcher. The author has contributed to research in topics: Band gap & Thin film. The author has an hindex of 1, co-authored 1 publications receiving 2 citations.

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TL;DR: Amorphous hydrogenated silicon carbide alloy films (a-SiC:H) were produced by the decomposition of methane and silane in a glow discharge deposition system as discussed by the authors.
Abstract: Amorphous hydrogenated silicon carbide alloy films (a-SiC:H) were produced by the decomposition of methane and silane in a glow discharge deposition system. A deposition rate of 13 A/sec was achieved for good quality films. Amorphous SiC:H films of p + type and n + type of a band gap of 1.86 eV and 1.8 eV and the activation energy of 0.4 eV and 0.23 eV, respectively were obtained. Results show that p + type and n + type a-SiC:H films can be good window layers and good diffusion barriers for indium in polyimide/metal/n-i-p(p-i-n)/ITO amorphous silicon solar cells.

2 citations


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TL;DR: Carbon grading in the buffer layer at the p/i interface increases the open circuit voltage of both p-n and n-i-p amorphous silicon solar cells.
Abstract: Carbon grading in the buffer layer at the p/i interface increases the open circuit voltage of both p-i-n and n-i-p amorphous silicon solar cells. We propose that carbon grading enlarges the electric field and reduces the electron tunneling at the p/i interface.

5 citations