D. M. Hwang

Bio: D. M. Hwang is an academic researcher from Telcordia Technologies. The author has contributed to research in topics: Thin film & Quantum well. The author has an hindex of 42, co-authored 123 publications receiving 6708 citations. Previous affiliations of D. M. Hwang include Indian Institute of Science.

Crystal substructure and physical properties of the superconducting phase Bi4(Sr,Cr)6Cu4O16+x.

Abstract: We have isolated a high-T/sub c/ phase in the Bi-Sr-Ca-Cu-O system of composition Bi/sub 4/(Sr,Ca)/sub 6/Cu/sub 4/O/sub 16/..mu../sub x/. The crystal substructure has a tetragonal unit cell (a = 3.817 A, c = 30.6 A) with similarities to both the oxygen-defect perovskites YBa/sub 2/Cu/sub 3/O/sub 7/..sqrt../sub x/ and the K/sub 2/NiF/sub 4/ structure of La/sub 2/CuO/sub 4/. The oxygen content, determined by titration and thermogravimetric analysis (TGA) experiments, corresponds to a formal oxidation state Cu(2.15). Oxygen can be reversibly depleted in an argon ambient in an amount corresponding to the reduction of the Cu(III) into Cu(II). The compound has a metalliclike resistance above its T/sub c/ near 85 K. Processing this precursor compound by heating to temperatures near its melting point (885 /sup 0/C) produces a sharp resistivity drop near 110 K that we show by ac susceptibility and Meissner effect is due to a superconducting transition.

Stimulated emission in semiconductor quantum wire heterostructures.

Abstract: We report the first observation of stimulated emission in quasi-one-dimensional semiconductor quantum wires Amplified spontaneous emission and stimulated emission spectra of the GaAs/AlGaAs quantum wires exhibit fine structure arising from transitions between lateral, one-dimensional electron and hole subbands The observed subband separations, \ensuremath{\sim}10 meV, are consistent with the calculated ones

Preparation, structure, and properties of the superconducting compound series Bi 2 Sr 2 Ca n-1 Cu n O y with n=1, 2, and 3

Abstract: Crystals of the three Bi-based cuprates of general formula ${\mathrm{Bi}}_{2}{\mathrm{Sr}}_{2}{\mathrm{Ca}}_{n\ensuremath{-}1}{\mathrm{Cu}}_{n}{\mathrm{O}}_{y}$ with $n=1,2, \mathrm{and} 3$ have been isolated and their structural and physical properties investigated. The structures are similar, differing only in the number of Cu${\mathrm{O}}_{2}$-Ca-Cu${\mathrm{O}}_{2}$ slabs packed along the $c$ axis. The insertion of one and two slabs increases $c$ from 24.6 to 30.6 and 37.1 \AA{}. Transmission electron microscopy shows there are stacking faults within the crystals in agreement with our x-ray data and its analysis. Resistivity, ac susceptibility, and dc magnetization measurements demonstrate superconductivity in the $n=1,2, \mathrm{and} 3$ phases at 10, 85, and 110 K, respectively. The observed transition temperatures and the stacking fault densities are dependent upon sample processing, in particular, the annealing temperatures and cooling rates. The transition temperature is, within the accuracy of our chemical titration, independent of the average copper valency that was determined to be 2.15 \ifmmode\pm\else\textpm\fi{} 0.03 for each of the three compounds.

Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates

Abstract: Epitaxial liftoff is an alternative to lattice‐mismatched heteroepitaxial growth. Multilayer AlxGa1−xAs epitaxial films are separated from their growth substrates by undercutting an AlAs release layer in HF acid (selectivity ≳108 for x≤0.4). The resulting AlxGa1−xAs films tend to bond by natural intermolecular surface forces to any smooth substrate (Van der Waals bonding). We have demonstrated GaAs thin‐film bonding by surface tension forces onto Si, glass, sapphire, LiNbO3, InP, and diamond substrates, as well as self‐bonding onto GaAs substrates. In transmission electron microscopy the substrate and thin‐film atomic lattices can be simultaneously imaged, showing only a thin (20–100 A) amorphous layer in between.

High-performance uncooled 1.3-/spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications

Abstract: Design considerations for fabricating highly efficient uncooled semiconductor lasers are discussed. The parameters investigated include the temperature characteristics of threshold current, quantum efficiency, and modulation speed. To prevent carrier overflow under high-temperature operation, the electron confinement energy is increased by using the Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP material system instead of the conventional Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y//InP material system. To reduce the transparency current and the carrier-density-dependent loss due to the intervalence-band absorption, strained-layer quantum wells are chosen as the active layer. Experimentally, 1.3-/spl mu/m compressive-strained five-quantum-well lasers and tensile-strained three-quantum-well lasers were fabricated using a 3-/spl mu/m wide ridge-waveguide laser structure. For both types of lasers, the intrinsic material parameters are found to be similar in magnitude and in temperature dependence if they are normalized to each well. Specifically, the compressive-strained five-quantum-well lasers show excellent extrinsic temperature characteristics, such as small drop of 0.3 dB in differential quantum efficiency when the heat sink temperature changes from 25 to 100/spl deg/C, and a large small-signal modulation bandwidth of 8.6 GHz at 85/spl deg/C. The maximum 3 dB modulation bandwidth was measured to be 19.6 GHz for compressive-strained lasers and 17 GHz for tensile-strained-lasers by an optical modulation technique. The strong carrier confinement also results in a small k-factor (0.25 ns) which indicates the potential for high-speed modulation up to 35 GHz. In spite of the aluminum-containing active layer, no catastrophic optical damage was observed at room temperature up to 218 mW for compressive-strained five-quantum-well lasers and 103 mW for tensile-strained three-quantum-well lasers. For operating the compressive-strained five-quantum-well lasers at 85/spl deg/C with more than 5 mW output power, a mean-time-to-failure (MTTF) of 9.4 years is projected from a preliminary life test. These lasers are highly attractive for uncooled, potentially low-cost applications in the subscriber loop. >

Semiconductor Clusters, Nanocrystals, and Quantum Dots

Abstract: Current research into semiconductor clusters is focused on the properties of quantum dots-fragments of semiconductor consisting of hundreds to many thousands of atoms-with the bulk bonding geometry and with surface states eliminated by enclosure in a material that has a larger band gap. Quantum dots exhibit strongly size-dependent optical and electrical properties. The ability to join the dots into complex assemblies creates many opportunities for scientific discovery.

Angle-resolved photoemission studies of the cuprate superconductors

Abstract: The last decade witnessed significant progress in angle-resolved photoemission spectroscopy (ARPES) and its applications. Today, ARPES experiments with 2-meV energy resolution and $0.2\ifmmode^\circ\else\textdegree\fi{}$ angular resolution are a reality even for photoemission on solids. These technological advances and the improved sample quality have enabled ARPES to emerge as a leading tool in the investigation of the high-${T}_{c}$ superconductors. This paper reviews the most recent ARPES results on the cuprate superconductors and their insulating parent and sister compounds, with the purpose of providing an updated summary of the extensive literature. The low-energy excitations are discussed with emphasis on some of the most relevant issues, such as the Fermi surface and remnant Fermi surface, the superconducting gap, the pseudogap and $d$-wave-like dispersion, evidence of electronic inhomogeneity and nanoscale phase separation, the emergence of coherent quasiparticles through the superconducting transition, and many-body effects in the one-particle spectral function due to the interaction of the charge with magnetic and/or lattice degrees of freedom. Given the dynamic nature of the field, we chose to focus mainly on reviewing the experimental data, as on the experimental side a general consensus has been reached, whereas interpretations and related theoretical models can vary significantly. The first part of the paper introduces photoemission spectroscopy in the context of strongly interacting systems, along with an update on the state-of-the-art instrumentation. The second part provides an overview of the scientific issues relevant to the investigation of the low-energy electronic structure by ARPES. The rest of the paper is devoted to the experimental results from the cuprates, and the discussion is organized along conceptual lines: normal-state electronic structure, interlayer interaction, superconducting gap, coherent superconducting peak, pseudogap, electron self-energy, and collective modes. Within each topic, ARPES data from the various copper oxides are presented.

Sintering dense nanocrystalline ceramics without final-stage grain growth

Abstract: Sintering is the process whereby interparticle pores in a granular material are eliminated by atomic diffusion driven by capillary forces. It is the preferred manufacturing method for industrial ceramics. The observation of Burke and Coble that certain crystalline granular solids could gain full density and translucency by solid-state sintering was an important milestone for modern technical ceramics. But these final-stage sintering processes are always accompanied by rapid grain growth, because the capillary driving forces for sintering (involving surfaces) and grain growth (involving grain boundaries) are comparable in magnitude, both being proportional to the reciprocal grain size. This has greatly hampered efforts to produce dense materials with nanometre-scale structure (grain size less than 100 nm), leading many researchers to resort to the 'brute force' approach of high-pressure consolidation at elevated temperatures. Here we show that fully dense cubic Y2O3 (melting point, 2,439 degrees C) with a grain size of 60 nm can be prepared by a simple two-step sintering method, at temperatures of about 1,000 degrees C without applied pressure. The suppression of the final-stage grain growth is achieved by exploiting the difference in kinetics between grain-boundary diffusion and grain-boundary migration. Such a process should facilitate the cost-effective preparation of other nanocrystalline materials for practical applications.

Strongly enhanced current densities in superconducting coated conductors of YBa2Cu3O7-x + BaZrO3

Abstract: There are numerous potential applications for superconducting tapes based on YBa(2)Cu(3)O(7-x) (YBCO) films coated onto metallic substrates. A long-established goal of more than 15 years has been to understand the magnetic-flux pinning mechanisms that allow films to maintain high current densities out to high magnetic fields. In fact, films carry one to two orders of magnitude higher current densities than any other form of the material. For this reason, the idea of further improving pinning has received little attention. Now that commercialization of YBCO-tape conductors is much closer, an important goal for both better performance and lower fabrication costs is to achieve enhanced pinning in a practical way. In this work, we demonstrate a simple and industrially scaleable route that yields a 1.5-5-fold improvement in the in-magnetic-field current densities of conductors that are already of high quality.

30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes

Abstract: There is a significant gap between the internal efficiency of light‐emitting diodes (LEDs) and their external efficiency. The reason for this shortfall is the narrow escape cone for light in high refractive index semiconductors. We have found that by separating thin‐film LEDs from their substrates (by epitaxial lift‐off, for example), it is much easier for light to escape from the LED structure and thereby avoid absorption. Moreover, by nanotexturing the thin‐film surface using ‘‘natural lithography,’’ the light ray dynamics becomes chaotic, and the optical phase‐space distribution becomes ‘‘ergodic,’’ allowing even more of the light to find the escape cone. We have demonstrated 30% external efficiency in GaAs LEDs employing these principles.