D. Ouyang

Bio: D. Ouyang is an academic researcher from Technical University of Berlin. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 11, co-authored 22 publications receiving 1468 citations.

Ultralong Dephasing Time in InGaAs Quantum Dots

Abstract: We measure a dephasing time of several hundred picoseconds at low temperature in the ground-state transition of strongly confined InGaAs quantum dots, using a highly sensitive four-wave mixing technique. Between 7 and 100 K the polarization decay has two distinct components resulting in a non-Lorentzian line shape with a lifetime-limited zero-phonon line and a broadband from elastic exciton-acoustic phonon interactions.

Rabi oscillations in the excitonic ground-state transition of InGaAs quantum dots

Abstract: We present measurements and calculations of optical Rabi oscillations in the excitonic ground-state transition of an InGaAs quantum dot ensemble at low temperature. Rabi oscillations which are damped versus pulse area and change period when changing pulse duration are observed. Comparisons with calculations show that the observed damping is not intrinsic to a single dot. Dephasing processes and the biexciton resonance change the amplitude and the period of the oscillations, respectively, while the damping versus pulse area is due to a distribution of transition dipole moments in the ensemble.

Exciton relaxation and dephasing in quantum-dot amplifiers from room to cryogenic temperature

Abstract: We present an extensive experimental study of the exciton relaxation and dephasing in InGaAs quantum dots (QDs) in the temperature range from 10 K to 295 K. The QDs are embedded in the active region of an electrically pumped semiconductor optical amplifier. Ultrafast four-wave mixing and differential transmission spectroscopy on the dot ground-state transition are performed with a sensitive heterodyne detection technique. The importance of the population relaxation dynamics to the dephasing is determined as a function of injection current and temperature. Above 150 K dephasing processes much faster than the population relaxation are present, due to both carrier-phonon scattering and Coulomb interaction with the injected carriers. Only at low temperatures (<30 K) does population relaxation of multiexcitons in the gain regime fully determine the dephasing.

High performance narrow stripe quantum-dot lasers with etched waveguide

Abstract: 1.3 µm range narrow stripe (8 µm) quantum-dot (QD) lasers processed in deep-mesa geometry, etched through the waveguide, demonstrate high external differential efficiency (50%) and a low threshold current density (<130 A cm−2) superior to the shallow mesa devices. This opens a new way for cost-efficient fabrication of distributed feedback and photonic crystal QD devices.

Relaxation and dephasing of multiexcitons in semiconductor quantum dots.

Abstract: We measure the dephasing time of ground-state excitonic transitions in InGaAs quantum dots under electrical injection in the temperature range from 10 to 70 K. Electrical injection into the barrier region results in a pure dephasing of the excitonic transitions. Once the injected carriers fill the electronic ground state, the biexciton to exciton transition is probed and a correlation of the exciton and biexciton phonon scattering mechanisms is found. Additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.

The Quantum Theory of Light

Abstract: (b) Write out the equations for the time dependence of ρ11, ρ22, ρ12 and ρ21 assuming that a light field interaction V = -μ12Ee iωt + c.c. couples only levels |1> and |2>, and that the excited levels exhibit spontaneous decay. (8 marks) (c) Under steady-state conditions, find the ratio of populations in states |2> and |3>. (3 marks) (d) Find the slowly varying amplitude ̃ ρ 12 of the polarization ρ12 = ̃ ρ 12e iωt . (6 marks) (e) In the limiting case that no decay is possible from intermediate level |3>, what is the ground state population ρ11(∞)? (2 marks) 2. (15 marks total) In a 2-level atom system subjected to a strong field, dressed states are created in the form |D1(n)> = sin θ |1,n> + cos θ |2,n-1> |D2(n)> = cos θ |1,n> sin θ |2,n-1>

Indistinguishable photons from a single-photon device

Abstract: Single-photon sources have recently been demonstrated using a variety of devices, including molecules1,2,3, mesoscopic quantum wells4, colour centres5, trapped ions6 and semiconductor quantum dots7,8,9,10,11. Compared with a Poisson-distributed source of the same intensity, these sources rarely emit two or more photons in the same pulse. Numerous applications for single-photon sources have been proposed in the field of quantum information, but most—including linear-optical quantum computation12—also require consecutive photons to have identical wave packets. For a source based on a single quantum emitter, the emitter must therefore be excited in a rapid or deterministic way, and interact little with its surrounding environment. Here we test the indistinguishability of photons emitted by a semiconductor quantum dot in a microcavity through a Hong–Ou–Mandel-type two-photon interference experiment13,14. We find that consecutive photons are largely indistinguishable, with a mean wave-packet overlap as large as 0.81, making this source useful in a variety of experiments in quantum optics and quantum information.

High-performance semiconductor quantum-dot single-photon sources.

Abstract: Single photons are a fundamental element of most quantum optical technologies. The ideal single-photon source is an on-demand, deterministic, single-photon source delivering light pulses in a well-defined polarization and spatiotemporal mode, and containing exactly one photon. In addition, for many applications, there is a quantum advantage if the single photons are indistinguishable in all their degrees of freedom. Single-photon sources based on parametric down-conversion are currently used, and while excellent in many ways, scaling to large quantum optical systems remains challenging. In 2000, semiconductor quantum dots were shown to emit single photons, opening a path towards integrated single-photon sources. Here, we review the progress achieved in the past few years, and discuss remaining challenges. The latest quantum dot-based single-photon sources are edging closer to the ideal single-photon source, and have opened new possibilities for quantum technologies.

An All-Optical Quantum Gate in a Semiconductor Quantum Dot

Abstract: We report coherent optical control of a biexciton (two electron-hole pairs), confined in a single quantum dot, that shows coherent oscillations similar to the excited-state Rabi flopping in an isolated atom The pulse control of the biexciton dynamics, combined with previously demonstrated control of the single-exciton Rabi rotation, serves as the physical basis for a two-bit conditional quantum logic gate The truth table of the gate shows the features of an all-optical quantum gate with interacting yet distinguishable excitons as qubits Evaluation of the fidelity yields a value of 07 for the gate operation Such experimental capability is essential to a scheme for scalable quantum computation by means of the optical control of spin qubits in dots

Coherent properties of a two-level system based on a quantum-dot photodiode

Abstract: Present-day information technology is based mainly on incoherent processes in conventional semiconductor devices. To realize concepts for future quantum information technologies, which are based on coherent phenomena, a new type of 'hardware' is required. Semiconductor quantum dots are promising candidates for the basic device units for quantum information processing. One approach is to exploit optical excitations (excitons) in quantum dots. It has already been demonstrated that coherent manipulation between two excitonic energy levels--via so-called Rabi oscillations--can be achieved in single quantum dots by applying electromagnetic fields. Here we make use of this effect by placing an InGaAs quantum dot in a photodiode, which essentially connects it to an electric circuit. We demonstrate that coherent optical excitations in the quantum-dot two-level system can be converted into deterministic photocurrents. For optical excitation with so-called pi-pulses, which completely invert the two-level system, the current is given by I = fe, where f is the repetition frequency of the experiment and e is the elementary charge. We find that this device can function as an optically triggered single-electron turnstile.