D.S. Gosling

Bio: D.S. Gosling is an academic researcher. The author has contributed to research in topics: Ohmic contact & Silicon. The author has an hindex of 1, co-authored 1 publications receiving 18 citations.

Measurement of high-field carrier drift velocities in silicon by a time-of-flight technique

Abstract: In this paper we describe a time-of-flight technique which has been used to measure the drift velocities of carriers in silicon at high electric fields. Carrier velocities are determined absolutely by measuring the transit time of carriers through a region of approximately uniform electric field and known width in a p+-ν -n+diode. The transit time is obtained directly as the duration of the sample current pulse following bombardment of one face of the p+-ν-n+diode with a very short pulse of 10-keV electrons. The ratio of the known sample width to the measured transit time gives the carrier velocity for a particular value of electric field. The carrier-velocity data thus obtained are absolute, with an accuracy of approximately ± 5 percent. Drift-velocity data for carriers in silicon are presented for electric fields between 4 and 40 kV/cm and the present data are compared with those obtained from measurements of current density in bulk samples as a function of electric field.

A 40 keV Pulsed Electron Accelerator

Abstract: A pulsed electron accelerator has been built with the following characteristics: energy of the electrons up to 40 keV; average current up to 20 μA; minimum duration of each burst about 70 psec; frequency of repetition of the bursts up to 104 Hz; jitter of the burst with respect to a trigger pulse less than 80 psec; number of electrons per burst (current 5 μA, duration 0.2 nsec) 6.3×103; typical fluctuation on the number of electrons contained in a burst (FWHM) 1%. The accelerator consists of an electron source, made with an electron gun of type commonly used in video tubes, and two pairs of deflection plates perpendicular to each other. The electron beam passes through the plates and the duration of each burst is controlled by a sine wave applied to a pair of plates, while the repetition frequency is controlled by pulses of suitable width and amplitude on the other pair of plates. A pretrigger pulse is available. This accelerator was built to create, in a very short time, a large number of electron‐hole p...

Switching processes in alloyed pin rectifiers

Abstract: A theory for the switching of power rectifiers from forward to reverse state is derived, and confirmed by measurements. In cases interesting especially in application, one may confine oneself to strong injection in the forward state, and to strong reverse currents during the switching process. Under these circumstances, the reverse voltage is built up during the switching by the space charges of the flowing off charge carriers. The following results, which contradict a conception frequently voiced, may be pointed out: ( a ) The flowing off of the charge carriers is not limited by “reverse-biased” doping junctions. ( b ) For that reason, the duration of the switching process is not determined by the finite carrier lifetime if the sweeping out current is strong enough. It follows from the theory that during switching processes the rectifier can be destroyed by essentially smaller voltages than by those it resists under stationary conditions.