D
D. S. Green
Researcher at RF Micro Devices
Publications - 48
Citations - 1999
D. S. Green is an academic researcher from RF Micro Devices. The author has contributed to research in topics: High-electron-mobility transistor & Molecular beam epitaxy. The author has an hindex of 22, co-authored 47 publications receiving 1827 citations. Previous affiliations of D. S. Green include University of California, San Diego & DARPA.
Papers
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Journal ArticleDOI
Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys
Debdeep Jena,Sten Heikman,D. S. Green,D. Buttari,Robert Coffie,Huili Xing,Stacia Keller,S. P. DenBaars,James S. Speck,Umesh K. Mishra,I. P. Smorchkova +10 more
TL;DR: In this article, the concept and experimental realization of polarization-induced bulk electron doping in III-V nitride semiconductors was presented, by exploiting the large polarization charges in the 3-D electron slabs.
Journal ArticleDOI
Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys
Debdeep Jena,Sten Heikman,D. S. Green,Ilan B. Yaacov,Robert Coffie,Huili Xing,Stacia Keller,S. P. DenBaars,James S. Speck,Umesh K. Mishra +9 more
TL;DR: In this article, the concept and experimental realization of polarization-induced bulk electron doping in III-V nitride semiconductors was presented, where the large polarization charge was exploited to create wide slabs of high density mobile electrons without introducing shallow donors.
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Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
Huili Xing,D. S. Green,Haijiang Yu,Tom Mates,Peter Kozodoy,Stacia Keller,Steven P. DenBaars,Umesh K. Mishra +7 more
TL;DR: In this article, the role of memory effect, surface segregation, and diffusion associated with Mg was investigated in metalorganic chemical vapor deposition (MOCVD) and showed that a Mg-rich film is present on MOCVD as-grown GaN:Mg base layers and can be removed by acid etch.
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Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
Andrew M. Armstrong,Aaron R. Arehart,D. S. Green,Umesh Mishra,James S. Speck,Steven A. Ringel +5 more
TL;DR: In this article, the impact of C incorporation on the deep level spectrum of n-type and semi-insulating GaN:C:Si films grown by rf plasma-assisted molecular-beam epitaxy (MBE) was investigated by the combination of deep level transient spectroscopy, steady-state photocapacitance, and transient deep-level optical spectra.
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AlGaN/GaN HFET reliability
TL;DR: In this paper, the gate leakage phenomenon described in this article produces electrons on the surface of the AlGaN layer adjacent to the gate electrode, and this creates a negative charge layer that partially depletes the conducting channel, thereby producing a degradation in dc current and RF output power.