Dae Hwan Kang

TL;DR: In this article, the authors characterized the optical absorption properties of Ge2Sb2Te5 in its amorphous, face-centered-cubic, and hexagonal phases, and explained the origins of inconsistent or unphysical results in previous reports.

TL;DR: In this article, an experimental investigation was carried out on the kinetic nature of the set process in a phase change memory device by combined analyses of set voltage wave forms and time-resolved low-field resistances.

TL;DR: In this article, the photoinduced current observed in thin film amorphous Ge2Sb2Te5 includes a dominant bolometric component under continuous illumination, while the spectrum recorded at a 30Hz chopping frequency suggests a mixed photoconductive and bolometric response.

TL;DR: It is speculated that the absorption saturation might be enhanced dramatically by making various indirect interband transitions possible via participation of phonons in a photonic excitation process.

TL;DR: In this paper, a phase-change material consisting of Ge-doped SbTe for a base material and nitrogen for a complementary property-modifier was proposed to reduce reset current and suppression of thermal interference between memory cells.