Dae Hwan Kim

TL;DR: In this paper, a self-aligned top-gate amorphous oxide TFTs for large size and high resolution displays are presented, where Ar plasma is exposed on the source/drain region of active layer to minimize the source and drain series resistances.

TL;DR: In this paper, an extraction technique for subgap density of states (DOS) in an n-channel amorphous InGaZnO thin-film transistor (TFT) by using multifrequency capacitancevoltage (C -V) characteristics is proposed and verified by comparing the measured I-V characteristics with the technology computer-aided design simulation results incorporating the extracted DOS as parameters.

TL;DR: Amorphous oxide semiconductors have many advantages over conventional amorphous and polycrystalline silicon that are used for the channel layers of thin-fi lm transistors (TFTs), including a good short-range uniformity, a high-effect mobility, a large area uniform integration, a low cost and low temperature fabrication process, transparency, etc.

TL;DR: A sandwich-like structured strain sensor with excellent optical transparency based on highly purified, solution-processed, 99% metallic CNT-polydimethylsiloxane (PDMS) composite thin films that can be applied and controlled based on the need of individual applications.

TL;DR: The concept of activation energy window (AEW) is introduced to explain the occurrence of PPC effects by photoinduced electron doping, which is likely to be associated with the formation of peroxides in the semiconductor.