Daihua Zhang

Bio: Daihua Zhang is an academic researcher from Tianjin University. The author has contributed to research in topics: Nanowire & Resonator. The author has an hindex of 40, co-authored 183 publications receiving 8813 citations. Previous affiliations of Daihua Zhang include Hewlett-Packard & University of Southern California.

Transparent, conductive, and flexible carbon nanotube films and their application in organic light-emitting diodes.

Abstract: We have carried out comparative studies on transparent conductive thin films made with two kinds of commercial carbon nanotubes: HiPCO and arc-discharge nanotubes. These films have been further exploited as hole-injection electrodes for organic light-emitting diodes (OLEDs) on both rigid glass and flexible substrates. Our experiments reveal that films based on arc-discharge nanotubes are overwhelmingly better than HiPCO-nanotube-based films in all of the critical aspects, including surface roughness, sheet resistance, and transparency. Further improvement in arc-discharge nanotube films has been achieved by using PEDOT passivation for better surface smoothness and using SOCl2 doping for lower sheet resistance. The optimized films show a typical sheet resistance of ∼160 Ω/□ at 87% transparency and have been used successfully to make OLEDs with high stabilities and long lifetimes.

Detection of NO2 down to ppb levels using individual and multiple In2O3 nanowire devices

Abstract: We demonstrate detection of NO2 down to ppb levels using transistors based on both single and multiple In2O3 nanowires operating at room temperature. This represents orders-of-magnitude improvement over previously reported metal oxide film or nanowire/nanobelt sensors. A comparison between the single and multiple nanowire sensors reveals that the latter have numerous advantages in terms of great reliability, high sensitivity, and simplicity in fabrication. Furthermore, selective detection of NO2 can be readily achieved with multiple-nanowire sensors even with other common chemicals such as NH3, O2, CO, and H2 around.

In2O3 nanowires as chemical sensors

Abstract: We present an approach to use individual In2O3 nanowire transistors as chemical sensors working at room temperature. Upon exposure to a small amount of NO2 or NH3, the nanowire transistors showed a decrease in conductance up to six or five orders of magnitude and also substantial shifts in the threshold gate voltage. These devices exhibited significantly improved chemical sensing performance compared to existing solid-state sensors in many aspects, such as the sensitivity, the selectivity, the response time, and the lowest detectable concentrations. Furthermore, the recovery time of our devices can be shortened to just 30 s by illuminating the devices with UV light in vacuum.

In2O3 Nanowires as Chemical Sensors

Abstract: We present an approach to use individual In2O3 nanowire transistors as chemical sensors working at room temperature. Upon exposure to a small amount of NO2 or NH3, the nanowire transistors showed a decrease in conductance up to six or five orders of magnitude and also substantial shifts in the threshold gate voltage. These devices exhibited significantly improved chemical sensing performance compared to existing solid-state sensors in many aspects, such as the sensitivity, the selectivity, the response time, and the lowest detectable concentrations. Furthermore, the recovery time of our devices can be shortened to just 30 s by illuminating the devices with UV light in vacuum.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Abstract: Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Fabrication and ethanol sensing characteristics of ZnO nanowire gas sensors

Abstract: Based on the achievement of synthesis of ZnO nanowires in mass production, ZnO nanowires gas sensors were fabricated with microelectromechanical system technology and ethanol-sensing characteristics were investigated. The sensor exhibited high sensitivity and fast response to ethanol gas at a work temperature of 300 °C. Our results demonstrate the potential application of ZnO nanowires for fabricating highly sensitive gas sensors.

Magnetic Iron Oxide Nanoparticles: Synthesis and Surface Functionalization Strategies

Abstract: Surface functionalized magnetic iron oxide nanoparticles (NPs) are a kind of novel functional materials, which have been widely used in the biotechnology and catalysis. This review focuses on the recent development and various strategies in preparation, structure, and magnetic properties of naked and surface functionalized iron oxide NPs and their corresponding application briefly. In order to implement the practical application, the particles must have combined properties of high magnetic saturation, stability, biocompatibility, and interactive functions at the surface. Moreover, the surface of iron oxide NPs could be modified by organic materials or inorganic materials, such as polymers, biomolecules, silica, metals, etc. The problems and major challenges, along with the directions for the synthesis and surface functionalization of iron oxide NPs, are considered. Finally, some future trends and prospective in these research areas are also discussed.

Water-Dispersible Magnetite-Reduced Graphene Oxide Composites for Arsenic Removal

Abstract: Magnetite−graphene hybrids have been synthesized via a chemical reaction with a magnetite particle size of ∼10 nm. The composites are superparamagnetic at room temperature and can be separated by an external magnetic field. As compared to bare magnetite particles, the hybrids show a high binding capacity for As(III) and As(V), whose presence in the drinking water in wide areas of South Asia has been a huge problem. Their high binding capacity is due to the increased adsorption sites in the M−RGO composite which occurs by reducing the aggregation of bare magnetite. Since the composites show near complete (over 99.9%) arsenic removal within 1 ppb, they are practically usable for arsenic separation from water.