Dana Pitzer

Bio: Dana Pitzer is an academic researcher from Siemens. The author has contributed to research in topics: Thin film & Layer (electronics). The author has an hindex of 16, co-authored 58 publications receiving 980 citations. Previous affiliations of Dana Pitzer include Infineon Technologies.

Solidly mounted ZnO shear mode film bulk acoustic resonators for sensing applications in liquids

Abstract: Solidly mounted film bulk acoustic resonators (FBAR) operating at 850 MHz in the shear vibration mode have been fabricated. C-axis inclined zinc oxide (ZnO) thin films realized by modified reactive magnetron sputtering were used. Coupling factors k/sup 2/ of 1.7% and Q-factors of 312 were determined in air. Q-factors of 192 were measured in water, making these devices attractive for sensing applications in liquids, e.g., biosensing.

Novel integrated FBAR sensors: a universal technology platform for bio- and gas-detection

Abstract: In this paper the feasibility of thin film bulk acoustic resonators (FBAR), for applications in bio- and gas-detection, is shown for the first time. Solidly mounted, ZnO FBARs with frequencies around 2 GHz have been fabricated on silicon substrates. The dependence of the FBAR mass sensitivity on the design of the layer stack has been investigated exhibiting an optimized sensitivity of 2.5 Hz cm/sup 2//pg. Using a common protein assay the capability of detecting bio-molecules has successfully been proved. Gas sensing has been demonstrated by coating the FBAR with a humidity absorbing polymer. A strong non-linear dependence of the humidity sensitivity on the thickness of the polymer coating has been found. When the polymer thickness is far less than the acoustic wavelength, a pure mass dependent response occurs, leading to a negative shift in resonance frequency. Moreover, as the polymer thickness becomes significant, acoustic influences affect the response and the shift becomes large and positive. A sensitivity to humidity of up to two orders of magnitude higher than that of comparably coated quartz crystal micro-balances has been observed.

Electro-acoustic hysteresis behaviour of PZT thin film bulk acoustic resonators

Abstract: Thin film bulk acoustic resonators (FBARs) based on Pb(Zr x Ti (1− x ) )O 3 (PZT) with varying compositions, ranging from x =0.25 to 0.6, were fabricated to investigate hysteresis-like dependencies of the resonance frequency and electro-mechanical coupling constant on bias voltage. The resonators, formed by a simple sandwich structure consisting of bottom electrode, PZT thin film and top electrode, arranged on a planar acoustic mirror, were designed to give a resonance frequency of about 2 GHz. PZT thin films were deposited in a planar multi target sputtering system using three metallic targets in a reactive Ar/O 2 mixture. For low Zr-content, where PZT is grown in the tetragonal phase, the parallel resonance frequencies are strongly dependent on the applied electric field, while the series resonance frequency is practically unaffected. This behaviour is completely different for rhombohedral PZT at higher Zr-content. Here the series resonance frequency becomes strongly field dependent, which can be attributed to 109°/71° domain switching. As a potential application based on the observed strong field dependence of the acoustic properties, a bandwidth-tuneable or programmable RF filter based on PZT FBARs is proposed.

Multilayer capacitor with high specific capacitance and production process therefor

Abstract: A thin-film technology multi-layer capacitor with enhanced capacitance and/or reduced space requirement. The dielectric layers of which are alternately disposed between electrode layers on a substrate. Through alternate electrode layer connections, parallel interconnection of the individual capacitor layers is obtained. The result is that the individual capacitances are additive, while the temperature response can be optimized by a suitable choice or combination of different dielectric layers.

Ferroelectric thin films: Review of materials, properties, and applications

Abstract: An overview of the state of art in ferroelectric thin films is presented. First, we review applications: microsystems' applications, applications in high frequency electronics, and memories based on ferroelectric materials. The second section deals with materials, structure (domains, in particular), and size effects. Properties of thin films that are important for applications are then addressed: polarization reversal and properties related to the reliability of ferroelectric memories, piezoelectric nonlinearity of ferroelectric films which is relevant to microsystems' applications, and permittivity and loss in ferroelectric films-important in all applications and essential in high frequency devices. In the context of properties we also discuss nanoscale probing of ferroelectrics. Finally, we comment on two important emerging topics: multiferroic materials and ferroelectric one-dimensional nanostructures. (c) 2006 American Institute of Physics.

Ferroelectric thin films for micro-sensors and actuators: a review

Abstract: This paper reviews deposition, integration, and device fabrication of ferroelectric PbZrxTi1-xO3 (PZT) films for applications in microelectromechanical systems. As examples, a piezoelectric ultrasonic micromotor and pyroelectric infrared detector array are presented. A summary of the published data on the piezoelectric properties of PZT thin films is given. The figures of merit for various applications are discussed. Some considerations and results on operation, reliability, and depolarization of PZT thin films are presented.

A Thin Film Approach to Engineering Functionality into Oxides

Abstract: The broad spectrum of electronic and optical properties exhibited by oxides offers tremendous opportunities for microelectronic devices, especially when a combination of properties in a single device is desired Here we describe the use of reactive molecular-beam epitaxy and pulsed-laser deposition to synthesize functional oxides, including ferroelectrics, ferromagnets, and materials that are both at the same time Owing to the dependence of properties on direction, it is often optimal to grow functional oxides in particular directions to maximize their properties for a specific application But these thin film techniques offer more than orientation control; customization of the film structure down to the atomic-layer level is possible Numerous examples of the controlled epitaxial growth of oxides with perovskite and perovskite-related structures, including superlattices and metastable phases, are shown In addition to integrating functional oxides with conventional semiconductors, standard semiconductor practices involving epitaxial strain, confined thickness, and modulation doping can also be applied to oxide thin films Results of fundamental scientific importance as well as results revealing the tremendous potential of utilizing functional oxide thin films to create devices with enhanced performance are described