Daniel I. Pomerantz

Bio: Daniel I. Pomerantz is an academic researcher. The author has contributed to research in topics: Anodic bonding. The author has an hindex of 2, co-authored 2 publications receiving 793 citations.

Field Assisted Glass‐Metal Sealing

Abstract: A new process is described which permits the sealing of metals to glass and other insulators at temperatures well below the softening point of the glass. Sealing is accomplished in about 1 min by applying a dc voltage in excess of a few hundred volts between the glass and the metal in such a way that the former is at a negative potential with respect to the latter. The process has been applied to a number of glass‐metal combinations. A discussion is presented of some of the mechanisms which are believed to play a role in the bonding process.

Anodic bonding of liquid metals to insulators

Abstract: A method for ligating an electrically insulating material to an electrically conductive material, comprising the steps of: heating said conductive material until it melts; placement of said materials in close contact; heating said insulating material to obtain its electrical conductivity; passage of a positive electric current from said conductive material through said insulating material, thereby producing the bond between them, and the interruption of said current and cooling of said materials, so that said molten material solidifies. (Machine-translation by Google Translate, not legally binding)

High-performance heat sinking for VLSI

Abstract: The problem of achieving compact, high-performance forced liquid cooling of planar integrated circuits has been investigated. The convective heat-transfer coefficient h between the substrate and the coolant was found to be the primary impediment to achieving low thermal resistance. For laminar flow in confined channels, h scales inversely with channel width, making microscopic channels desirable. The coolant viscosity determines the minimum practical channel width. The use of high-aspect ratio channels to increase surface area will, to an extent, further reduce thermal resistance. Based on these considerations, a new, very compact, water-cooled integral heat sink for silicon integrated circuits has been designed and tested. At a power density of 790 W/cm2, a maximum substrate temperature rise of 71°C above the input water temperature was measured, in good agreement with theory. By allowing such high power densities, the heat sink may greatly enhance the feasibility of ultrahigh-speed VLSI circuits.

Silicon as a mechanical material

Abstract: Single-crystal silicon is being increasingly employed in a variety of new commercial products not because of its well-established electronic properties, but rather because of its excellent mechanical properties. In addition, recent trends in the engineering literature indicate a growing interest in the use of silicon as a mechanical material with the ultimate goal of developing a broad range of inexpensive, batch-fabricated, high-performance sensors and transducers which are easily interfaced with the rapidly proliferating microprocessor. This review describes the advantages of employing silicon as a mechanical material, the relevant mechanical characteristics of silicon, and the processing techniques which are specific to micromechanical structures. Finally, the potentials of this new technology are illustrated by numerous detailed examples from the literature. It is clear that silicon will continue to be aggressively exploited in a wide variety of mechanical applications complementary to its traditional role as an electronic material. Furthermore, these multidisciplinary uses of silicon will significantly alter the way we think about all types of miniature mechanical devices and components.

Silicon as a mechanical material

Abstract: Single-crystal silicon is being increasingly employed in a variety of new commercial products not because of its well-established electronic properties, but rather because of its excellent mechanical properties. In addition, recent trends in the engineering literature indicate a growing interest in the use of silicon as a mechanical material with the ultimate goal of developing a broad range of inexpensive, batch-fabricated, high-performance sensors and transducers which are easily interfaced with the rapidly proliferating microprocessor. This review describes the advantages of employing silicon as a mechanical material, the relevant mechanical characteristics of silicon, and the processing techniques which are specific to micromechanical structures. Finally, the potentials of this new technology are illustrated by numerous detailed examples from the literature. It is clear that silicon will continue to be aggressively exploited in a wide variety of mechanical applications complementary to its traditional role as an electronic material. Furthermore, these multidisciplinary uses of silicon will significantly alter the way we think about all types of miniature mechanical devices and components.

A gas chromatographic air analyzer fabricated on a silicon wafer

Abstract: A miniature gas analysis system has been built based on the principles of gas chromatography (GC). The major components are fabricated in silicon using photolithography and chemical etching techniques, which allows size reductions of nearly three orders of magnitude compared to conventional laboratory instruments. The chromatography system consists of a sample injection valve and a 1.5-m-long separating capillary column, which are fabricated on a substrate silicon wafer. The output thermal conductivity detector is separately batch fabricated and integrably mounted on the substrate wafer. The theory of gas chromatography has been used to optimize the performance of the sensor so that separations of gaseous hydrocarbon mixtures are performed in less than 10 s. The system is expected to find application in the areas of portable ambient air quality monitors, implanted biological experiments, and planetary probes.

Bonding of silicon wafers for silicon‐on‐insulator

Abstract: Several aspects of a new silicon‐on‐insulator technique utilizing bonding of oxidized silicon wafers were investigated. The bonding was achieved by heating in an inert atmosphere a pair of wafers with hydrophilic surfaces contacted face‐to‐face. A quantitative method for the evaluation of the surface energy of the bond based on crack propagation theory was developed. The bond strength was found to increase with the bonding temperature from about 60–85 erg/cm2 at room temperature to ≂2200 erg/cm2 at 1400 °C. The strength was essentially independent of the bond time. Bonds created during 10‐s annealing at 800 °C were mechanically strong enough to withstand the mechanical and/or chemical thinning of the top wafer to the desired thickness and subsequent device processing. A model was proposed to explain three distinct phases of bonding in the temperature domain. Electrical properties of the bond were tested using metal‐oxide‐semiconductor (MOS) capacitors. The results were consistent with a negative charge de...