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Author

Daniel J. Hoppe

Other affiliations: Jet Propulsion Laboratory
Bio: Daniel J. Hoppe is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Antenna (radio) & NASA Deep Space Network. The author has an hindex of 16, co-authored 77 publications receiving 1046 citations. Previous affiliations of Daniel J. Hoppe include Jet Propulsion Laboratory.


Papers
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Proceedings ArticleDOI
17 Jun 2012
TL;DR: In this article, the authors proposed the design of new millimeter-wave radiometers for Earth remote sensing using ocean surface altimeters, motivated by the fact that these missions include nadir-viewing, co-located 18-37 GHz microwave radiometers to measure wet-tropospheric path delay.
Abstract: The recent introduction of 35-nm gate length InP MMIC low-noise amplifiers has enabled significant advances in Earth remote sensing. These low-noise amplifiers achieve 2-dB and 3-dB noise figure at 180 GHz and 90 GHz, respectively, at room temperature. For Earth remote sensing using ocean surface altimeters, the design of new millimeter-wave radiometers is motivated by the fact that these missions include nadir-viewing, co-located 18–37 GHz microwave radiometers to measure wet-tropospheric path delay. However, due to the substantial area of the surface instantaneous fields of view (IFOV) at these frequencies, the accuracy of wet path retrievals begins to degrade at approximately 50 km from the coasts. In addition, conventional microwave radiometers do not provide wet-path delay over land. For a maximum antenna aperture size on Earth observation satellites, the addition of higher-frequency millimeter-wave (90–170 GHz) radiometers to current Jason-class radiometers is expected to improve retrievals of wet-tropospheric delay in coastal areas and to increase the potential for over-land retrievals.

16 citations

Journal ArticleDOI
TL;DR: In this paper, a 34.5 GHz special complex cavity gyrotron oscillator operating at the second harmonic of the electron cyclotron frequency was studied and the locking bandwidth was measured by comparing the phase of the injection signal and output signal using a balanced mixer.
Abstract: Phase-locking in a 34.5-GHz special complex cavity gyrotron oscillator operating at the second harmonic of the electron cyclotron frequency was studied. Injection of the locking power was made via a quasi-optical circulator connected to the gyrotron output. Locking bandwidth was measured by comparing the phase of the injection signal and output signal using a balanced mixer. Locking was observed with input power level as low as 40 dB below the gyrotron output power. The locking bandwidth is, however, narrower than in gyrotrons operating at the fundamental cyclotron frequency which may be attributed to the longer resonant cavity in the second harmonic gyrotron and the corresponding larger value of external quality factor. The measurements are roughly in agreement with predictions of Adler's phase-locking equation which is given for our system in terms of powers propagating in the output waveguide toward and away from the gyrotron cavity. >

16 citations

Proceedings ArticleDOI
TL;DR: In this paper, an interferometric apparatus that measures wavefront phase advance/delay through grey-scale and binary masks as functions of wavelength and optical density is presented along with ellipsometric measurements of optical constants.
Abstract: The development of stellar coronagraphs for exoplanet detection requires apodized occulting masks to effectively remove the light from the central star while allowing planet light to propagate past. One possible implementation, a gray-scale mask, includes the placement of micron-scale neutral density light absorbing patterns using High Energy Beam Sensitive (HEBS) glass. A second implementation, binary masks, uses micron-scale diffractive/reflective patterns. Coronagraph performance will be influenced by wavefront phase shifts introduced by the masks, hence accurate characterization of the fundamental optical properties, namely optical density (OD), phase advance/delay and optical constants of the material is needed for occulter design, development and modeling. In this paper we describe an interferometric apparatus that measures wavefront phase advance/delay through grey-scale and binary masks as functions of wavelength and optical density, which is also measured. Results for HEBS gray-scale masks will be presented along with ellipsometric measurements of optical constants.

13 citations

Proceedings ArticleDOI
TL;DR: In this paper, the authors discuss the fabrication of a set of free standing (without a substrate) silicon masks and present their physical and optical characteristics in relevance to their performance over the visible to near IR bandwidth.
Abstract: Direct imaging and characterization of exo-solar terrestrial planets require coronagraphic instruments capable of suppressing star light to 10-10. Pupil shaping masks have been proposed and designed1 at Princeton University to accomplish such a goal. Based on Princeton designs, free standing (without a substrate) silicon masks have been fabricated with lithographic and deep etching techniques. In this paper, we discuss the fabrication of such masks and present their physical and optical characteristics in relevance to their performance over the visible to near IR bandwidth.

12 citations

Proceedings ArticleDOI
11 May 2011
TL;DR: In this paper, a design based on the latter is emphasized, employing spherical primary optics and a new version of a "clamshell" corrector that is optimized to fit within the limited space between the antenna subreflector and the existing apex structure that supports the sub-reflector.
Abstract: Future deep space communications are likely to employ not only the existing RF uplink and downlink, but also a high capacity optical downlink. The Jet Propulsion Laboratory (JPL) is currently investigating the benefits of a ground based hybrid RF and deep space optical terminal based on limited modification of existing 34 meter antenna designs. The ideal design would include as large an optical aperture as technically practical and cost effective, cause minimal impact to RF performance, and remain cost effective even when compared to a separate optical terminal of comparable size. Numerous trades and architectures have been considered, including shared RF and optical apertures having aspheric optics and means to separate RF and optical signals, plus, partitioned apertures in which various zones of the primary are dedicated to optical reception. A design based on the latter is emphasized in this paper, employing spherical primary optics and a new version of a “clamshell” corrector that is optimized to fit within the limited space between the antenna sub-reflector and the existing apex structure that supports the sub-reflector. The mechanical design of the hybrid accommodates multiple spherical primary mirror panels in the central 11 meters of the antenna, and integrates the clamshell corrector and optical receiver modules with antenna hardware using existing attach points to the maximum extent practical. When an optical collection area is implemented on a new antenna, it is possible to design the antenna structure to accommodate the additional weight of optical mirrors providing an equivalent aperture of several meters diameter. The focus of our near term effort is to use optics with the 34 meter DSS-13 antenna at Goldstone to demonstrate spatial optical acquisition and tracking capability using an optical system that is temporarily integrated into the antenna.

12 citations


Cited by
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Patent
16 Jul 2002
TL;DR: In this paper, the fabrication and growth of sub-microelectronic circuitry is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.
Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

598 citations

Journal ArticleDOI
TL;DR: In this paper, a review of the literature related to the vibratory behavior of carbon nanotubes and their composites is presented, along with key conclusions and recommendations from these studies.

502 citations

Patent
04 Oct 2006
TL;DR: A bulk-doped semiconductor is a semiconductor that is at least one of the following: a single crystal, an elongated and bulk-depletioned semiconductor with a largest cross-sectional dimension less than 500 nanometers as discussed by the authors.
Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

460 citations

Journal ArticleDOI
TL;DR: In this paper, the authors proposed a wideband ultra wideband (UWB) communication protocol with a low EIRP level (−41.3dBm/MHz) for unlicensed operation between 3.1 and 10.6 GHz.
Abstract: Before the emergence of ultra-wideband (UWB) radios, widely used wireless communications were based on sinusoidal carriers, and impulse technologies were employed only in specific applications (e.g. radar). In 2002, the Federal Communication Commission (FCC) allowed unlicensed operation between 3.1–10.6 GHz for UWB communication, using a wideband signal format with a low EIRP level (−41.3dBm/MHz). UWB communication systems then emerged as an alternative to narrowband systems and significant effort in this area has been invested at the regulatory, commercial, and research levels.

452 citations

Book
01 Oct 2002
TL;DR: In this article, a method of moments (MoM) was proposed for electromagnetic modeling of composite metallic and dielectric structures using entire-domain basis functions defined over bilinear surfaces, resulting in a remarkably small number of unknowns.
Abstract: Starting from the equivalence theorem any composite metallic and dielectric structure can be analyzed by using SIE (surface integral equations). Such integral equations are usually solved by MoM (method of moments). Most of the existing MoM methods for solving SIE are developed for BORs (bodies of revolution). There are only few such methods that can handle structures of arbitrary shape. These methods use sub-domain basis functions defined over triangles, requiring a very large number of unknowns even for the simplest problems. This paper presents a new MoM method for electromagnetic modeling of composite metallic and dielectric structures. The method uses entire-domain basis functions defined over bilinear surfaces, resulting in a remarkably small number of unknowns.

439 citations