Daniel J. Hoppe

Bio: Daniel J. Hoppe is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Antenna (radio) & NASA Deep Space Network. The author has an hindex of 16, co-authored 77 publications receiving 1046 citations. Previous affiliations of Daniel J. Hoppe include Jet Propulsion Laboratory.

Broadband Venetian-Blind Polarizer With Dual Vanes

Abstract: During development of a Venetian Blind polarizer, high reflections and substantial pattern deformation were noted. Analysis showed that when the polarizer was illuminated slightly off axis, a degenerate mode was excited. This mode is resonant at the design center frequency, and was the cause of the problems. A design developed using dual vanes has been shown to be free of the problem. It also has greater bandwidth.

Analysis of the optical design for the SAFIR telelscope

Abstract: SAFIR, the Single Aperture Far Infra Red Observatory, is a very powerful space mission that will achieve background-limited sensitivity in the far infrared-submillimeter spectral region. Many processes of enormous interest to astronomers can best be studied in this wavelength range, but require the demanding combination of high sensitivity, good angular resolution, and spectroscopic capability. SAFIR is a 10m class telescope to offering good angular resolution, cooled to below 5 K in order to achieve background-limited sensitivity, and equipped with a complement of large-format cameras and broadband spectrometers. Successful operation of such a facility is critically dependent on achieving the level of sensitivity expected, but this is rendered difficult by potential pickup from unwanted sources of radiation. This problem is exacerbated by the fact that the emission from the optical system itself is minimal due to its low temperature, thus emphasizing the importance of minimizing pickup from unwanted astronomical sources of radiation, including the emission from dust in our solar system (analogous to the zodiacal light, hence 'zodi'), and the emission from warm dust in the Milky Way (Galactic 'cirrus').

The deep space network's X/X/Ka feed: Modifications for 100 kW CW uplink operation

Abstract: The Deep Space Network, which provides communication services for NASA's robotic missions, consists of a number of 34m beam waveguide antennas and conventional 70m dual-reflector antennas located around the globe, [1]. The 34m beam waveguide antennas employ a three-band feed covering the deep space uplink band near 7.2 GHz, and downlink bands at 8.45 and 32 GHz. Simultaneous uplink commanding at 25 kW CW and ultra low noise reception in both bands is supported along with monopulse tracking at 32 GHz, [2]. An existing uplink capability of 25 kW is also available on the 70m antennas using a more conventional X/X diplexing feed. In order to provide an equivalent uplink capability with the 34m antennas the X/X/Ka feed is currently being modified for 100 kW CW operation, [3]. Here we will discuss both the existing feed and the 100 kW modifications which are underway.

Focal Plane Array Receiver for Deep-Space Communication

Abstract: Typical ground antennas intended for use in space communication require large apertures operating at high frequencies. The challenges involved with these applications include achieving the required antenna performance in terms of antenna aperture efficiency and pointing accuracy. The utilization of a focal plane array in place of a standard single mode feed minimizes these problems. This paper discusses the key elements required to implement a focal plane array on a large high frequency antenna. It is shown that adaptive "least mean-square" (LMS) algorithms applied to the output of the array elements obtain the optimum combining weights in realtime, even in the presence of dynamic interference such as nearby spacecraft in array's field-of-view, or planetary radiation. This adaptive optimization capability maximizes the combined output SNR in real time, ensuring maximum data throughput in the communications link when operating in the presence of receiver noise and external interference generally present during planetary encounters.

A beamwaveguide design for high-power applications

Abstract: A beam waveguide (BWG) design suitable for high-power applications is described. The design features a transmit-only, four-port high-gain horn as input to a BWG system with a single parabolic mirror and three flat plates. The use of a single parabolic mirror is such that the highest field concentration is no greater than that caused by the horn itself. The horn is linearly polarized and a grid reflector is used to reflect the orthogonal polarization into the receive feed. A rotatable dual polarizer provides for arbitrary transmit polarization. The dual-reflector system is shaped to provide uniform illumination over the main reflector and therefore maximum gain for the given size aperture. Measured data from a scale model BWG system are presented.

Nanoscale wires and related devices

Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices

Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

IEEE Transactions on Microwave Theory and Techniques and Antennas and Propagation Announce a Joint Special Issue on Ultra-Wideband (UWB) Technology

Abstract: Before the emergence of ultra-wideband (UWB) radios, widely used wireless communications were based on sinusoidal carriers, and impulse technologies were employed only in specific applications (e.g. radar). In 2002, the Federal Communication Commission (FCC) allowed unlicensed operation between 3.1–10.6 GHz for UWB communication, using a wideband signal format with a low EIRP level (−41.3dBm/MHz). UWB communication systems then emerged as an alternative to narrowband systems and significant effort in this area has been invested at the regulatory, commercial, and research levels.

Electromagnetic Modeling of Composite Metallic and Dielectric Structures

Abstract: Starting from the equivalence theorem any composite metallic and dielectric structure can be analyzed by using SIE (surface integral equations). Such integral equations are usually solved by MoM (method of moments). Most of the existing MoM methods for solving SIE are developed for BORs (bodies of revolution). There are only few such methods that can handle structures of arbitrary shape. These methods use sub-domain basis functions defined over triangles, requiring a very large number of unknowns even for the simplest problems. This paper presents a new MoM method for electromagnetic modeling of composite metallic and dielectric structures. The method uses entire-domain basis functions defined over bilinear surfaces, resulting in a remarkably small number of unknowns.