Daniel Maurer

TL;DR: In this article, the impact of various deposition parameters such as the reactive gas flow ratio, plasma power, substrate temperature and chamber back pressure of ICP-CVD deposited a-SiC:H thin films is investigated and the influence on important MEMS-related properties like residual stress, Young's modulus, hardness, mass density and refractive index is evaluated.

TL;DR: In this article, the impact of thermal annealing up to temperatures of 1200°C on the chemical and mechanical properties of hydrogenated amorphous silicon carbide (a-SiC:H) thin films was reported.

TL;DR: In this article, the authors reported the deposition of a-SiC:H thin films at a substrate temperature of 250 °C applying a dual plasma process by superimposing a radio frequency (RF) plasma which excites the substrate table to an inductively-coupled RF plasma.

TL;DR: In this article, a micromechanical structure including a substrate and a functional structure arranged at the substrate is described, where the functional structure has a functional region configured to deflect with respect to the substrate responsive to a force acting on the functional region.

TL;DR: In this article, the impact of thermal treatment on a 500-nm thin hydrogenated amorphous SiC membrane was evaluated with a uniformly applied pressure load and the bending characteristics of the diaphragm were determined.