Fundamentals of Plasmonics.- Electromagnetics of Metals.- Surface Plasmon Polaritons at Metal / Insulator Interfaces.- Excitation of Surface Plasmon Polaritons at Planar Interfaces.- Imaging Surface Plasmon Polariton Propagation.- Localized Surface Plasmons.- Electromagnetic Surface Modes at Low Frequencies.- Applications.- Plasmon Waveguides.- Transmission of Radiation Through Apertures and Films.- Enhancement of Emissive Processes and Nonlinearities.- Spectroscopy and Sensing.- Metamaterials and Imaging with Surface Plasmon Polaritons.- Concluding Remarks.

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Plasmonics: Fundamentals and Applications

Research into terahertz technology is now receiving increasing attention around the world, and devices exploiting this waveband are set to become increasingly important in a very diverse range of applications. Here, an overview of the status of the technology, its uses and its future prospects are presented.

Cutting-edge terahertz technology

Compression of amplified chirped optical pulses

Terahertz spectroscopy systems use far-infrared radiation to extract molecular spectral information in an otherwise inaccessible portion of the electromagnetic spectrum. Materials research is an essential component of modern terahertz systems: novel, higher-power terahertz sources rely heavily on new materials such as quantum cascade structures. At the same time, terahertz spectroscopy and imaging provide a powerful tool for the characterization of a broad range of materials, including semiconductors and biomolecules.

Materials for terahertz science and technology

The rise time of intense radiation determines the maximum field strength atoms can be exposed to before their polarizability dramatically drops due to the detachment of an outer electron. Recent progress in ultrafast optics has allowed the generation of ultraintense light pulses comprising merely a few field oscillation cycles. The arising intensity gradient allows electrons to survive in their bound atomic state up to external field strengths many times higher than the binding Coulomb field and gives rise to ionization rates comparable to the light frequency, resulting in a significant extension of the frontiers of nonlinear optics and (nonrelativistic) high-field physics. Implications include the generation of coherent harmonic radiation up to kiloelectronvolt photon energies and control of the atomic dipole moment on a subfemtosecond $(1{\mathrm{f}\mathrm{s}=10}^{\mathrm{\ensuremath{-}}15}\mathrm{}\mathrm{s})$ time scale. This review presents the landmarks of the 30-odd-year evolution of ultrashort-pulse laser physics and technology culminating in the generation of intense few-cycle light pulses and discusses the impact of these pulses on high-field physics. Particular emphasis is placed on high-order harmonic emission and single subfemtosecond extreme ultraviolet/x-ray pulse generation. These as well as other strong-field processes are governed directly by the electric-field evolution, and hence their full control requires access to the (absolute) phase of the light carrier. We shall discuss routes to its determination and control, which will, for the first time, allow access to the electromagnetic fields in light waves and control of high-field interactions with never-before-achieved precision.

Intense few-cycle laser fields: Frontiers of nonlinear optics

Using the method of time-domain spectroscopy, we measure the far-infrared absorption and dispersion from 0.2 to 2 THz of the crystalline dielectrics sapphire and quartz, fused silica, and the semiconductors silicon, gallium arsenide, and germanium. For sapphire and quartz, the measured absorptions are consistent with the earlier work below 0.5 THz. Above 1 THz we measure significantly more absorption for sapphire, while for quartz our values are in reasonable agreement with those of the previous work. Our results on high-purity fused silica are consistent with those on the most transparent fused silica measured to date. For the semiconductors, we show that many of the previous measurements on silicon were dominated by the effects of carriers due to impurities. For high-resistivity, 10-kΩ cm silicon, we measure a remarkable transparency together with an exceptionally nondispersive index of refraction. For GaAs our measurements extend the precision of the previous work, and we resolve two weak absorption features at 0.4 and 0.7 THz. Our measurements on germanium demonstrate the dominant role of intrinsic carriers; the measured absorption and dispersion are well fitted by the simple Drude theory.

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Far-infrared time-domain spectroscopy with terahertz beams of dielectrics and semiconductors

We describe the application of a new high-brightness, terahertz-beam system to time-domain spectroscopy. By analyzing the propagation of terahertz electromagnetic pulses through water vapor, we have made what we believe are the most accurate measurements to date of the absorption cross sections of the water molecule for the nine strongest lines in the frequency range from 0.2 to 1.45 THz.

Terahertz time-domain spectroscopy of water vapor.

The performance of an optoelectronic terahertz (THz) beam system is described. The transmitter operation is based on the repetitive, subpicosecond laser excitation of a Hertzian dipole antenna embedded in a charged coplanar line. With this transmitter electromagnetic beams of 1/2 cycle THz pulses at a repetition rate of 100 MHz are produced. The associated optoelectronic receiver is gated in synchronism with the excitation of the transmitter by subpicosecond pulses from the same laser source. With this receiver, the 10-nW beams of THz pulses were observed with a signal-to-noise ratio greater than 10000:1. Several sources contributing to the noise of the receiver are discussed, together with ways to reduce them. With an integration time of 125 ms, a signal-to-noise ratio of 1 is obtained for a THz beam with an average power of 10/sup -16/ W. The receiver operates in the sampling mode and has a time resolution of 0.5 ps. >

Characterization of an optoelectronic terahertz beam system

We report efficient quasi-optic coupling of a freely propagating beam of terahertz (THz) pulses into a parallel-plate copper waveguide (with a plate separation of 108mum) and subsequent low-loss, single-TEM-mode propagation with virtually no group-velocity dispersion. Undistorted, low-loss propagation of the incoming 0.3-ps FWHM THz pulses was observed within the bandwidth from 0.1 to 4 THz for a length of 24.4 mm. We compare experimentally derived values for the absorption and phase velocity with theory to show consistency. This demonstration is direct proof of the excellent performance of the parallel-plate waveguide as a wideband THz interconnect.

Undistorted guided-wave propagation of subpicosecond terahertz pulses.

The far-infrared absorption and index of refraction of high-resistivity, float-zone, crystalline silicon has been measured by terahertz time-domain spectroscopy. The measured new upper limit for the absorption of this most transparent dielectric material in the far infrared shows unprecedented transparency over the range from 0.5 to 2.5 THz and a well-resolved absorption feature at 3.6 THz. The index of refraction shows remarkably little dispersion, changing by only 0.0001 over the range from 0.5 to 4.5 THz.

Daniel R. Grischkowsky

Papers

Far-infrared time-domain spectroscopy with terahertz beams of dielectrics and semiconductors

Terahertz time-domain spectroscopy of water vapor.

Characterization of an optoelectronic terahertz beam system

Undistorted guided-wave propagation of subpicosecond terahertz pulses.

Terahertz time-domain spectroscopy characterization of the far-infrared absorption and index of refraction of high-resistivity, float-zone silicon