Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

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Spintronics: Fundamentals and applications

The surface science of titanium dioxide

We review the field of cavity optomechanics, which explores the interaction between electromagnetic radiation and nano- or micromechanical motion This review covers the basics of optical cavities and mechanical resonators, their mutual optomechanical interaction mediated by the radiation pressure force, the large variety of experimental systems which exhibit this interaction, optical measurements of mechanical motion, dynamical backaction amplification and cooling, nonlinear dynamics, multimode optomechanics, and proposals for future cavity quantum optomechanics experiments In addition, we describe the perspectives for fundamental quantum physics and for possible applications of optomechanical devices

Cavity Optomechanics

1. Introduction 2. Theoretical foundations 3. Propagation and focusing of optical fields 4. Spatial resolution and position accuracy 5. Nanoscale optical microscopy 6. Near-field optical probes 7. Probe-sample distance control 8. Light emission and optical interaction in nanoscale environments 9. Quantum emitters 10. Dipole emission near planar interfaces 11. Photonic crystals and resonators 12. Surface plasmons 13. Forces in confined fields 14. Fluctuation-induced phenomena 15. Theoretical methods in nano-optics Appendices Index.

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Principles of nano-optics

http://experimentationlab.berkeley.edu/sites/default/files/AFMImages/butt_AFM.pdf

Force measurements with the atomic force microscope: Technique, interpretation and applications

A new frequency modulation (FM) technique has been demonstrated which enhances the sensitivity of attractive mode force microscopy by an order of magnitude or more. Increased sensitivity is made possible by operating in a moderate vacuum (<10−3 Torr), which increases the Q of the vibrating cantilever. In the FM technique, the cantilever serves as the frequency determining element of an oscillator. Force gradients acting on the cantilever cause instantaneous frequency modulation of the oscillator output, which is demodulated with a FM detector. Unlike conventional ‘‘slope detection,’’ the FM technique offers increased sensitivity through increased Q without restricting system bandwidth. Experimental comparisons of FM detection in vacuum (Q∼50 000) versus slope detection in air (Q∼100) demonstrated an improvement of more than 10 times in sensitivity for a fixed bandwidth. This improvement is evident in images of magnetic transitions on a thin‐film CoPtCr magnetic disk. In the future, the increased sensitivi...

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Frequency modulation detection using high‐Q cantilevers for enhanced force microscope sensitivity

Magnetic resonance imaging (MRI) is well known as a powerful technique for visualizing subsurface structures with three-dimensional spatial resolution. Pushing the resolution below 1 micro m remains a major challenge, however, owing to the sensitivity limitations of conventional inductive detection techniques. Currently, the smallest volume elements in an image must contain at least 10(12) nuclear spins for MRI-based microscopy, or 10(7) electron spins for electron spin resonance microscopy. Magnetic resonance force microscopy (MRFM) was proposed as a means to improve detection sensitivity to the single-spin level, and thus enable three-dimensional imaging of macromolecules (for example, proteins) with atomic resolution. MRFM has also been proposed as a qubit readout device for spin-based quantum computers. Here we report the detection of an individual electron spin by MRFM. A spatial resolution of 25 nm in one dimension was obtained for an unpaired spin in silicon dioxide. The measured signal is consistent with a model in which the spin is aligned parallel or anti-parallel to the effective field, with a rotating-frame relaxation time of 760 ms. The long relaxation time suggests that the state of an individual spin can be monitored for extended periods of time, even while subjected to a complex set of manipulations that are part of the MRFM measurement protocol.

Single spin detection by magnetic resonance force microscopy

Magnetic resonance imaging (MRI) is well known as a powerful technique for visualizing subsurface structures with three-dimensional spatial resolution. Pushing the resolution below 1 µm remains a major challenge, however, owing to the sensitivity limitations of conventional inductive detection techniques. Currently, the smallest volume elements in an image must contain at least 1012 nuclear spins for MRI-based microscopy, or 107 electron spins for electron spin resonance microscopy. Magnetic resonance force microscopy (MRFM) was proposed as a means to improve detection sensitivity to the single-spin level, and thus enable three-dimensional imaging of macromolecules (for example, proteins) with atomic resolution. MRFM has also been proposed as a qubit readout device for spin-based quantum computers. Here we report the detection of an individual electron spin by MRFM. A spatial resolution of 25 nm in one dimension was obtained for an unpaired spin in silicon dioxide. The measured signal is consistent with a model in which the spin is aligned parallel or anti-parallel to the effective field, with a rotating-frame relaxation time of 760 ms. The long relaxation time suggests that the state of an individual spin can be monitored for extended periods of time, even while subjected to a complex set of manipulations that are part of the MRFM measurement protocol.

/pdf/single-spin-detection-by-magnetic-resonance-force-microscopy-4lj5fjgb3p.pdf

Extension of nuclear magnetic resonance (NMR) to nanoscale samples has been a longstanding challenge because of the insensitivity of conventional detection methods. We demonstrated the use of an individual, near-surface nitrogen-vacancy (NV) center in diamond as a sensor to detect proton NMR in an organic sample located external to the diamond. Using a combination of electron spin echoes and proton spin manipulation, we showed that the NV center senses the nanotesla field fluctuations from the protons, enabling both time-domain and spectroscopic NMR measurements on the nanometer scale.

http://science.sciencemag.org/content/sci/339/6119/557.full.pdf

Nanoscale Nuclear Magnetic Resonance with a Nitrogen-Vacancy Spin Sensor

Micromechanical cantilevers are commonly used for detection of small forces in microelectromechanical sensors (e.g., accelerometers) and in scientific instruments (e.g., atomic force microscopes). A fundamental limit to the detection of small forces is imposed by thermomechanical noise, the mechanical analog of Johnson noise, which is governed by dissipation of mechanical energy. This paper reports on measurements of the mechanical quality factor Q for arrays of silicon-nitride, polysilicon, and single-crystal silicon cantilevers. By studying the dependence of Q on cantilever material, geometry, and surface treatments, significant insight into dissipation mechanisms has been obtained. For submicron-thick cantilevers, Q is found to decrease with decreasing cantilever thickness, indicating surface loss mechanisms. For single-crystal silicon cantilevers, significant increase in room temperature Q is obtained after 700/spl deg/C heat treatment in either N/sub 2/ Or forming gas. At low temperatures, silicon cantilevers exhibit a minimum in Q at approximately 135 K, possibly due to a surface-related relaxation process. Thermoelastic dissipation is not a factor for submicron-thick cantilevers, but is shown to be significant for silicon-nitride cantilevers as thin as 2.3 /spl mu/m.

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Daniel Rugar

Papers

Frequency modulation detection using high‐Q cantilevers for enhanced force microscope sensitivity

Single spin detection by magnetic resonance force microscopy

Single spin detection by magnetic resonance force microscopy

Nanoscale Nuclear Magnetic Resonance with a Nitrogen-Vacancy Spin Sensor

Quality factors in micron- and submicron-thick cantilevers