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David Adler
Researcher at Massachusetts Institute of Technology
Publications - 173
Citations - 8021
David Adler is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Amorphous silicon & Amorphous solid. The author has an hindex of 36, co-authored 173 publications receiving 7808 citations.
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Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors
TL;DR: In this article, a model for the structure and properties of active centers in lone-pair semiconductors, based on the possibility of unique bonding configurations which can arise from the presence of nonbonding orbitals, is presented.
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Electrical and Optical Properties of Narrow-Band Materials
David Adler,Julius Feinleib +1 more
TL;DR: In this paper, a model for determining the density of states of pure stoichiometric NiO is proposed, taking into account the free-ion energy levels, and taking the Madelung potential, screening and covalency effects, crystalline-field stabilizations, and overlap effects.
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Threshold switching in chalcogenide-glass thin films
TL;DR: In this paper, two general classes of explanations for such non-Ohmic effects are presented: thermal and electronic. But, as discussed in Section 2.1, the use of the terminology electrothermal encompasses predominantly thermal and predominantly electronic processes as well as all intermediate cases, and therefore should not prejudice the casual observer into concluding that both effects are necessarily important.
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The mechanism of threshold switching in amorphous alloys
TL;DR: In this article, the authors survey the characteristics of threshold switching systems and examine the evidence for threshold switching as an electronic process and propose a semiquantitative model for the nature of the ON/OFF state.