抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Many of the recent advances in enhancing the thermoelectric figure of merit are linked to nanoscale phenomena found both in bulk samples containing nanoscale constituents and in nanoscale samples themselves. Prior theoretical and experimental proof-of-principle studies on quantum-well superlattice and quantum-wire samples have now evolved into studies on bulk samples containing nanostructured constituents prepared by chemical or physical approaches. In this Review, nanostructural composites are shown to exhibit nanostructures and properties that show promise for thermoelectric applications, thus bringing together low-dimensional and bulk materials for thermoelectric applications. Particular emphasis is given in this Review to the ability to achieve 1) a simultaneous increase in the power factor and a decrease in the thermal conductivity in the same nanocomposite sample and for transport in the same direction and 2) lower values of the thermal conductivity in these nanocomposites as compared to alloy samples of the same chemical composition. The outlook for future research directions for nanocomposite thermoelectric materials is also discussed.

https://www.bc.edu/content/dam/files/schools/cas_sites/physics/pdf/Ren/AdvMater_19_1043_2007.pdf

New Directions for Low-Dimensional Thermoelectric Materials**

Electrically driven semiconductor lasers are used in technologies ranging from telecommunications and information storage to medical diagnostics and therapeutics. The success of this class of lasers is due in part to well-developed planar semiconductor growth and processing, which enables reproducible fabrication of integrated, electrically driven devices. Yet this approach to device fabrication is also costly and difficult to integrate directly with other technologies such as silicon microelectronics. To overcome these issues for future applications, there has been considerable interest in using organic molecules, polymers, and inorganic nanostructures for lasers, because these materials can be fashioned into devices by chemical processing. Indeed, amplified stimulated emission and lasing have been reported for optically pumped organic systems and, more recently, inorganic nanocrystals and nanowires. However, electrically driven lasing, which is required in most applications, has met with several difficulties in organic systems, and has not been addressed for assembled nanocrystals or nanowires. Here we investigate the feasibility of achieving electrically driven lasing from individual nanowires. Optical and electrical measurements made on single-crystal cadmium sulphide nanowires show that these structures can function as Fabry-Perot optical cavities with mode spacing inversely related to the nanowire length. Investigations of optical and electrical pumping further indicate a threshold for lasing as characterized by optical modes with instrument-limited linewidths. Electrically driven nanowire lasers, which might be assembled in arrays capable of emitting a wide range of colours, could improve existing applications and suggest new opportunities.

Single-nanowire electrically driven lasers

Semiconductor heterostructures with modulated composition and/or doping enable passivation of interfaces and the generation of devices with diverse functions. In this regard, the control of interfaces in nanoscale building blocks with high surface area will be increasingly important in the assembly of electronic and photonic devices. Core-shell heterostructures formed by the growth of crystalline overlayers on nanocrystals offer enhanced emission efficiency, important for various applications. Axial heterostructures have also been formed by a one-dimensional modulation of nanowire composition and doping. However, modulation of the radial composition and doping in nanowire structures has received much less attention than planar and nanocrystal systems. Here we synthesize silicon and germanium core-shell and multishell nanowire heterostructures using a chemical vapour deposition method applicable to a variety of nanoscale materials. Our investigations of the growth of boron-doped silicon shells on intrinsic silicon and silicon-silicon oxide core-shell nanowires indicate that homoepitaxy can be achieved at relatively low temperatures on clean silicon. We also demonstrate the possibility of heteroepitaxial growth of crystalline germanium-silicon and silicon-germanium core-shell structures, in which band-offsets drive hole injection into either germanium core or shell regions. Our synthesis of core-multishell structures, including a high-performance coaxially gated field-effect transistor, indicates the general potential of radial heterostructure growth for the development of nanowire-based devices.

https://cml.harvard.edu/assets/nature420_57.pdf

Epitaxial core–shell and core–multishell nanowire heterostructures

Tropical peatlands are one of the largest near-surface reserves of terrestrial organic carbon, and hence their stability has important implications for climate change1,2,3. In their natural state, lowland tropical peatlands support a luxuriant growth of peat swamp forest overlying peat deposits up to 20 metres thick4,5. Persistent environmental change—in particular, drainage and forest clearing—threatens their stability2, and makes them susceptible to fire6. This was demonstrated by the occurrence of widespread fires throughout the forested peatlands of Indonesia7,8,9,10 during the 1997 El Nino event. Here, using satellite images of a 2.5 million hectare study area in Central Kalimantan, Borneo, from before and after the 1997 fires, we calculate that 32% (0.79 Mha) of the area had burned, of which peatland accounted for 91.5% (0.73 Mha). Using ground measurements of the burn depth of peat, we estimate that 0.19–0.23 gigatonnes (Gt) of carbon were released to the atmosphere through peat combustion, with a further 0.05 Gt released from burning of the overlying vegetation. Extrapolating these estimates to Indonesia as a whole, we estimate that between 0.81 and 2.57 Gt of carbon were released to the atmosphere in 1997 as a result of burning peat and vegetation in Indonesia. This is equivalent to 13–40% of the mean annual global carbon emissions from fossil fuels, and contributed greatly to the largest annual increase in atmospheric CO2 concentration detected since records began in 1957 (ref. 1).

The amount of carbon released from peat and forest fires in Indonesia during 1997

The assembly of semiconductor nanowires and carbon nanotubes into nanoscale devices and circuits could enable diverse applications in nanoelectronics and photonics1. Individual semiconducting nanowires have already been configured as field-effect transistors2, photodetectors3 and bio/chemical sensors4. More sophisticated light-emitting diodes5 (LEDs) and complementary and diode logic6,7,8 devices have been realized using both n- and p-type semiconducting nanowires or nanotubes. The n- and p-type materials have been incorporated in these latter devices either by crossing p- and n-type nanowires2,5,6,9 or by lithographically defining distinct p- and n-type regions in nanotubes8,10, although both strategies limit device complexity. In the planar semiconductor industry, intricate n- and p-type and more generally compositionally modulated (that is, superlattice) structures are used to enable versatile electronic and photonic functions. Here we demonstrate the synthesis of semiconductor nanowire superlattices from group III–V and group IV materials. (The superlattices are created within the nanowires by repeated modulation of the vapour-phase semiconductor reactants during growth of the wires.) Compositionally modulated superlattices consisting of 2 to 21 layers of GaAs and GaP have been prepared. Furthermore, n-Si/p-Si and n-InP/p-InP modulation doped nanowires have been synthesized. Single-nanowire photoluminescence, electrical transport and electroluminescence measurements show the unique photonic and electronic properties of these nanowire superlattices, and suggest potential applications ranging from nano-barcodes to polarized nanoscale LEDs.

Growth of nanowire superlattice structures for nanoscale photonics and electronics.

The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

Nanoscale wires and related devices

The threshold for generation of high‐density plasma caused by the interaction of laser radiation with solids is examined theoretically. The developed semiquantitative model is applicable for predicting the threshold for generating laser‐supported absorption waves, absorbing plasma produced on surfaces with high‐intensity laser radiation, and also for predicting the threshold of aerosol‐induced gas breakdown, commonly referred to as dirty air breakdown. In developing the model, the vapor density generated by laser interaction with the solid is calculated and then the intensity required to cascade ionize the vapor to full ionization is calculated. Analytic expressions are derived for the breakdown intensity which show the parametric dependence of the threshold. Since the vapor density is a function of laser intensity, and characteristics of the solid, different parametric dependence of the threshold on wavelength, pulse length, and particle characteristics is predicted compared to those determined by previous theoretical models of gas breakdown. Comparison of the threshold predicted by the model agree within a factor of 2 of experimental data for a wide range of experimental conditions including laser pulse duration from 10 nsec to cw, particle sizes from 0.1 μ to laser spot sizes of 1 cm, and wavelength scaling of 1.06–10.6 μ wavelength. Based on the good agreement between theoretical predictions and experimental data, the model can be used to predict thresholds for plasma production for a wide variety of atmospheric and solid‐surface conditions.

Gas breakdown initiated by laser radiation interaction with aerosols and solid surfaces

Gas‐breakdown threshold measurements with 10.6‐μ wavelength radiation have been made in air, argon, and helium. The threshold was determined with 50‐ and 200‐nsec‐duration pulses and was found to depend on the peak intensity of the pulse, showing that the breakdown process is a balance between the rate of energy absorption and some rate of energy loss. The threshold also decreased as the focal spot size was increased from 10−2 to 10−1 cm, showing that the loss process is reduced for larger beam sizes. The threshold varied inversely with gas pressure from 0.1 to 4 atm, which is evidence that the loss mechanism is not electron diffusion but must be some other process which exhibits a beam‐size dependence and is apparently weakly dependent on gas pressure.

Gas‐Breakdown Dependence on Beam Size and Pulse Duration with 10.6‐μ Wavelength Radiation

Electrodeposition is a widely used materials-deposition technology with a number of unique features, in particular, the efficient use of starting materials, conformal, and directed coating. The properties of the solvent medium for electrodeposition are critical to the technique's applicability. Supercritical fluids are unique solvents which give a wide range of advantages for chemistry in general, and materials processing in particular. However, a widely applicable approach to electrodeposition from supercritical fluids has not yet been developed. We present here a method that allows electrodeposition of a range of metals from supercritical carbon dioxide, using acetonitrile as a co-solvent and supercritical difluoromethane. This method is based on a careful selection of reagent and supporting electrolyte. There are no obvious barriers preventing this method being applied to deposit a range of materials from many different supercritical fluids. We present the deposition of 3-nm diameter nanowires in mesoporous silica templates using this methodology.

https://www.pnas.org/content/pnas/106/35/14768.full.pdf

David C. Smith

Papers

Growth of nanowire superlattice structures for nanoscale photonics and electronics.

Nanoscale wires and related devices

Gas breakdown initiated by laser radiation interaction with aerosols and solid surfaces

Gas‐Breakdown Dependence on Beam Size and Pulse Duration with 10.6‐μ Wavelength Radiation

Electrodeposition of metals from supercritical fluids