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David H. Seo
Researcher at Samsung
Publications - 72
Citations - 6473
David H. Seo is an academic researcher from Samsung. The author has contributed to research in topics: Graphene & Layer (electronics). The author has an hindex of 24, co-authored 72 publications receiving 5965 citations. Previous affiliations of David H. Seo include Sungkyunkwan University & Ewha Womans University.
Papers
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Journal ArticleDOI
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Myoung-Jae Lee,Chang Bum Lee,Dongsoo Lee,Seung Ryul Lee,Man Chang,Ji-Hyun Hur,Young-Bae Kim,Chang-Jung Kim,David H. Seo,Sunae Seo,U-In Chung,In-Kyeong Yoo,Kinam Kim +12 more
TL;DR: This work demonstrates a TaO(x)-based asymmetric passive switching device with which it was able to localize resistance switching and satisfy all aforementioned requirements, and eliminates any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.
Journal ArticleDOI
Reproducible resistance switching in polycrystalline NiO films
Sunae Seo,Myoung-Jae Lee,David H. Seo,E. J. Jeoung,Dongseok Suh,Y. S. Joung,I. K. Yoo,Inrok Hwang,Sang-Hyun Kim,Ik-Su Byun,Jin-Soo Kim,Jin Sik Choi,Bae Ho Park +12 more
TL;DR: Negative resistance behavior and reproducible resistance switching were found in polycrystalline NiO films deposited by dc magnetron reactive sputtering methods in this paper, where the negative resistance and the switching mechanism could be described by electron conduction related to metallic nickel defect states existing in deep levels and by small polaron hole hopping conduction.
Journal ArticleDOI
Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
Heejun Yang,Jinseong Heo,Seongjun Park,Hyun Jae Song,David H. Seo,Kyung-Eun Byun,Philip Kim,In-Kyeong Yoo,Hyun-Jong Chung,Kinam Kim +9 more
TL;DR: It is shown that for a graphene-silicon interface, Fermi-level pinning can be overcome and a triode-type device with a variable barrier, a “barristor,” can be made and used to create devices such as inverters.
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Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory
Myoung-Jae Lee,Youngsoo Park,Dongseok Suh,Eun-Hong Lee,Sunae Seo,Dong-Chirl Kim,Ranju Jung,Bo Soo Kang,Seung-Eon Ahn,Chang Bum Lee,David H. Seo,Young-Kwan Cha,In-Kyeong Yoo,Jin-Soo Kim,Bae Ho Park +14 more
Journal ArticleDOI
Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory.
Myoung-Jae Lee,Seungwu Han,Sang Ho Jeon,Bae Ho Park,Bo Soo Kang,Seung-Eon Ahn,Ki-Hwan Kim,Chang Bum Lee,Chang Jung Kim,In-Kyeong Yoo,David H. Seo,Xiang-Shu Li,Jong-Bong Park,Jung-Hyun Lee,Youngsoo Park +14 more
TL;DR: Through experiments on the negative resistance switching phenomenon in Pt-NiO-Pt structures, a nanofilament channels that can be electrically connected or disconnected are fabricated that are ideal for the basis for high-speed, high-density, nonvolatile memory applications.