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David Holec

Researcher at University of Leoben

Publications -  211
Citations -  5289

David Holec is an academic researcher from University of Leoben. The author has contributed to research in topics: Thin film & Ab initio. The author has an hindex of 36, co-authored 183 publications receiving 4017 citations. Previous affiliations of David Holec include University of Cambridge & Academy of Sciences of the Czech Republic.

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Critical thickness calculations for InGaN/GaN

TL;DR: In this paper, a model based on the overall energy balance was used to calculate the critical thickness for an InGaN epitaxial layer on a GaN substrate, which was found to be lower than values predicted by models proposed by Fischer or People and Bean.
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Ab initio inspired design of ternary boride thin films.

TL;DR: Investigations on the brittle-ductile behavior of the various diborides reveal, that the metastable structures are more ductile than their stable counterparts (WB2, TcB2, etc.).
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Decomposition pathways in age hardening of Ti-Al-N films

TL;DR: In this paper, the combined effect of annealing time and temperature upon the nano-structural development of Ti0.46Al0.54N thin films is studied, with a thermal exposure of either 1 min or 120 min in 100°C steps from 500°C to 1400°C. The impact of chemical changes at the atomic scale on the development of micro-strain and mechanical properties is studied by postannealing investigations using X-ray diffraction, nanoindentation, 3D-atom probe tomography and high-resolution...
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Trends in the elastic response of binary early transition metal nitrides

TL;DR: In this article, the elastic response of nine binary early transition metal nitrides (ScN, TiN, VN, YN, ZrN, NbN, LaN, HfN, and TaN) and AlN were studied.
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Intermetallic β‐Solidifying γ‐TiAl Based Alloys − From Fundamental Research to Application

TL;DR: In this article, a review of the development of the titanium alloy through structural characterization with sophisticated in and ex situ methods, engineering properties, manufacturing, and processing technologies to all aspects of application is presented.