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David P. Brunco
Researcher at GlobalFoundries
Publications - 99
Citations - 2428
David P. Brunco is an academic researcher from GlobalFoundries. The author has contributed to research in topics: Layer (electronics) & Germanium. The author has an hindex of 28, co-authored 99 publications receiving 2336 citations. Previous affiliations of David P. Brunco include Katholieke Universiteit Leuven & Tokyo Electron.
Papers
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Journal ArticleDOI
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
David P. Brunco,B. De Jaeger,Geert Eneman,Jerome Mitard,Geert Hellings,Alessandra Satta,Valentina Terzieva,Laurent Souriau,Frederik Leys,Geoffrey Pourtois,Michel Houssa,Gillis Winderickx,E. Vrancken,Sonja Sioncke,Karl Opsomer,G. Nicholas,Matty Caymax,Andre Stesmans,J. Van Steenbergen,Paul W. Mertens,Marc Meuris,M.M. Heyns +21 more
TL;DR: In this article, thin, strained epi-Si is examined as a passivation of the Ge/gate dielectric interface, with an optimized thickness found at 6 monolayers.
Journal ArticleDOI
Complete experimental test of kinetic models for rapid alloy solidification
TL;DR: Aziz et al. as discussed by the authors used pulsed laser melting of Si-As on insulating substrates to enforce planar solidification spanning the velocity range 0.2-2 m/s.
Patent
Semiconductor structure with self-aligned wells and multiple channel materials
TL;DR: In this article, a strain relaxed buffer is disposed on a semiconductor substrate, and a silicon region and silicon germanium region are disposed adjacent to each other on the buffer.
Proceedings ArticleDOI
High performance Ge pMOS devices using a Si-compatible process flow
Paul Zimmerman,G. Nicholas,B. De Jaeger,Ben Kaczer,Andre Stesmans,Lars-Ake Ragnarsson,David P. Brunco,Frederik Leys,Matty Caymax,Gillis Winderickx,Karl Opsomer,Marc Meuris,M.M. Heyns +12 more
TL;DR: In this article, a Si-compatible process flow without the incorporation of strain was demonstrated using Ge transistors with gate lengths ranging from 10 mum down to 0.125 mum, the shortest ever reported.
Journal ArticleDOI
High-Performance Deep Submicron Ge pMOSFETs With Halo Implants
G. Nicholas,B. De Jaeger,David P. Brunco,Paul Zimmerman,Geert Eneman,Koen Martens,Marc Meuris,M.M. Heyns +7 more
TL;DR: GeGe pMOSFETs with HfO2 gate dielectric and gate lengths down to 125 nm are fabricated in a Si-like process, and a drive current of 1034 muA/mum is achieved for L=125 nm at VG-VT=VD=-1.5 V, when evaluating from the source as mentioned in this paper.