David Tetelbaum

Bio: David Tetelbaum is an academic researcher from N. I. Lobachevsky State University of Nizhny Novgorod. The author has contributed to research in topics: Silicon & Photoluminescence. The author has an hindex of 16, co-authored 138 publications receiving 977 citations. Previous affiliations of David Tetelbaum include Saratov State University.

Field- and irradiation-induced phenomena in memristive nanomaterials

Abstract: The breakthrough in electronics and information technology is anticipated by the development of emerging memory and logic devices, artificial neural networks and brain-inspired systems on the basis of memristive nanomaterials represented, in a particular case, by a simple ‘metal–insulator–metal’ (MIM) thin-film structure. The present article is focused on the comparative analysis of MIM devices based on oxides with dominating ionic (ZrOx, HfOx) and covalent (SiOx, GeOx) bonding of various composition and geometry deposited by magnetron sputtering. The studied memristive devices demonstrate reproducible change in their resistance (resistive switching – RS) originated from the formation and rupture of conductive pathways (filaments) in oxide films due to the electric-field-driven migration of oxygen vacancies and / or mobile oxygen ions. It is shown that, for both ionic and covalent oxides under study, the RS behaviour depends only weakly on the oxide film composition and thickness, device geometry (down to a device size of about 20×20 μm2). The devices under study are found to be tolerant to ion irradiation that reproduces the effect of extreme fluences of high-energy protons and fast neutrons. This common behaviour of RS is explained by the localized nature of the redox processes in a nanoscale switching oxide volume. Adaptive (synaptic) change of resistive states of memristive devices is demonstrated under the action of single or repeated electrical pulses, as well as in a simple model of coupled (synchronized) neuron-like generators. It is concluded that the noise-induced phenomena cannot be neglected in the consideration of a memristive device as a nonlinear system. The dynamic response of a memristive device to periodic signals of complex waveform can be predicted and tailored from the viewpoint of stochastic resonance concept. (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Bipolar resistive switching and charge transport in silicon oxide memristor

Abstract: Reproducible bipolar resistive switching has been studied in SiO x -based thin-film memristor structures deposited by magnetron sputtering technique on the TiN/Ti metalized SiO 2 /Si substrates. It is established that, after electroforming, the structure can be switched between the quasi-ohmic low-resistance state related to silicon chains (conducting filaments) and the high-resistance state with semiconductor-like hopping mechanism of charge transport through the defects in silicon oxide. The switching parameters are determined by a balance between the reduction and oxidation processes that, in turn, are driven by the value and polarity of voltage bias, current, temperature and device environment. The results can be used for the development of silicon-based nonvolatile memory and memristive systems as a key component of future electronics.

Ion implantation in β-Ga2O3: Physics and technology

Abstract: Gallium oxide, and in particular its thermodynamically stable β-Ga2O3 phase, is within the most exciting materials in research and technology nowadays due to its unique properties The very high breakdown electric field and the figure of merit rivaled only by diamond have tremendous potential for the next generation “green” electronics enabling efficient distribution, use, and conversion of electrical energy Ion implantation is a traditional technological method used in these fields, and its well-known advantages can contribute greatly to the rapid development of physics and technology of Ga2O3-based materials and devices Here, the status of ion implantation in β-Ga2O3 nowadays is reviewed Attention is mainly paid to the results of experimental study of damage under ion irradiation and the properties of Ga2O3 layers doped by ion implantation The results of ab initio theoretical calculations of the impurities and defect parameters are briefly presented, and the physical principles of a number of analytical methods used to study implanted gallium oxide layers are highlighted The use of ion implantation in the development of Ga2O3-based devices, such as metal oxide field-effect transistors, Schottky barrier diodes, and solar-blind UV detectors, is described together with systematical analysis of the achieved values of their characteristics Finally, the most important challenges to be overcome in this field of science and technology are discussed

The influence of phosphorus and hydrogen ion implantation on the photoluminescence of SiO2 with Si nanoinclusions

Abstract: It is established that doping (by means of ion implantation) of SiO2 films with Si nanoinclusions (NI) (SiO2:Si) by phosphorus results in an enhancement of the photoluminescence (PL) peak at ∼800 nm without a significant shift of it. This peak is believed to be linked with silicon NI serving as quantum dots (QD). Three mechanisms of PL enhancement are suggested. It is shown experimentally that the most probable mechanisms are: the passivation of broken bonds by phosphorus; the increase of donor centers in the NI. Theoretical investigation of the energy spectra and the energy of radiative transition in a QD with and without one donor center is provided. It is shown that the energy of radiative transition does not affected by the presence of a donor center.

Fast parallel algorithms for short-range molecular dynamics

Abstract: Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

Ion and electron irradiation-induced effects in nanostructured materials

Abstract: A common misconception is that the irradiation of solids with energetic electrons and ions has exclusively detrimental effects on the properties of target materials. In addition to the well-known cases of doping of bulk semiconductors and ion beam nitriding of steels, recent experiments show that irradiation can also have beneficial effects on nanostructured systems. Electron or ion beams may serve as tools to synthesize nanoclusters and nanowires, change their morphology in a controllable manner, and tailor their mechanical, electronic, and even magnetic properties. Harnessing irradiation as a tool for modifying material properties at the nanoscale requires having the full microscopic picture of defect production and annealing in nanotargets. In this article, we review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes. We also consider the t...

Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Abstract: Due to its significant applications in many relevant fields, light detection in the solar-blind deep-ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a comprehensive review of the applications of inorganic UWBG semiconductors for solar-blind DUV light detection in the past several decades. Different kinds of DUVPDs, which are based on varied UWBG semiconductors including Ga2O3, MgxZn1−xO, III-nitride compounds (AlxGa1−xN/AlN and BN), diamond, etc., and operate on different working principles, are introduced and discussed systematically. Some emerging techniques to optimize device performance are addressed as well. Finally, the existing techniques are summarized and future challenges are proposed in order to shed light on development in this critical research field.

β-Ga2O3 for wide-bandgap electronics and optoelectronics

Abstract: β-Ga2O3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent semiconducting oxide (TSO), which attracted recently much scientific and technological attention. Unique properties of that compound combined with its advanced development in growth and characterization place β-Ga2O3 in the frontline of future applications in electronics (Schottky barrier diodes, field-effect transistors), optoelectronics (solar- and visible-blind photodetectors, flame detectors, light emitting diodes), and sensing systems (gas sensors, nuclear radiation detectors). A capability of growing large bulk single crystals directly from the melt and epi-layers by a diversity of epitaxial techniques, as well as explored material properties and underlying physics, define a solid background for a device fabrication, which, indeed, has been boosted in recent years. This required, however, enormous efforts in different areas of science and technology that constitutes a chain linking together engineering, metrology and theory. The present review includes material preparation (bulk crystals, epi-layers, surfaces), an exploration of optical, electrical, thermal and mechanical properties, as well as device design / fabrication with resulted functionality suitable for different fields of applications. The review summarizes all of these aspects of β-Ga2O3 at the research level that spans from the material preparation through characterization to final devices.

Brightening, Blinking, Bluing and Bleaching in the Life of a Quantum Dot: Friend or Foe?

Abstract: Semiconductor nanocrystals or quantum dots (QDs) are highly photoluminescent materials with unique optical attributes that are being exploited in an ever-increasing array of applications. However, the complex surface chemistry of these finite-sized fluorophores gives rise to a number of photophysical phenomena that can complicate their use in imaging applications. Fluorescence intermittency (FI), photoluminescence enhancement (PLE) and spectral bluing are properties of QD emission that would appear, at first sight, detrimental to quantitative measurement. Fortunately, developments in rational QD synthesis and surface modification are promising to minimize the effects of these fluorescence instabilities, while applications that exploit them are now coming to the fore. We review recent experimental and theoretical studies of FI, PLE and bluing, highlighting the benefits, as well as complications, they bring to key applications.