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Showing papers by "David W Parent published in 2001"


Proceedings ArticleDOI
20 Jun 2001
TL;DR: San Jose State University developed an interdisciplinary lab-based microelectronics process engineering program that introduces statistical process control (SPC) and design of experiments (DOE) to students in a micro-electronics manufacturing environment as mentioned in this paper.
Abstract: At present, there is a need for engineers with CMOS processing knowledge, statistical process control (SPC) skills, and the ability to work in an interdisciplinary team environment and assume leadership roles. San Jose State University are developing an interdisciplinary lab-based microelectronics process engineering program that introduces SPC and DOE to students in a microelectronics manufacturing environment. At the heart of the program are three courses, each of which is imagined to be a division of a fictitious semiconductor fabrication company (Spartan Semiconductor Services, Inc., or S3i). The divisions are: Digital NMOS division (MatE/EE129: Introduction to IC Fabrication), Thin Film Research Division (MatE/ChE 166: Advanced Thin Film Processes) and CMOS Division and SPC task force (MatE/EE 167: Microelectronics Manufacturing Methods). Several unique features of the program are its introduction of SPC in a microelectronics manufacturing environment, the inclusion of design of experiments (DOE) topics, and the faculty-faculty, faculty-student and student-student interaction among the three courses (divisions). Ultimately, we are trying to provide a learning environment that will allow our students to be immediately productive in an IC production facility, to be able to communicate with IC process engineers, and to be prepared for graduate school programs.

7 citations


Journal ArticleDOI
TL;DR: In this paper, a detailed study of Zn 1− x Mg x S y Se 1− y epitaxial films on GaAs (1−0-0) substrates using photo assisted growth was presented.

6 citations


Journal ArticleDOI
TL;DR: The Microelectronics Process Engineering (μProE) program as mentioned in this paper is an interdisciplinary program with a particular emphasis on microelectronics-related manufacturing, drawing from materials, chemical, electrical and industrial engineering programs and tied together with courses, internships and projects which integrate thin film processing with manufacturing control methods.
Abstract: Materials Science and Engineering straddles the fence between engineering and science. In order to produce more work-ready undergraduates, we offer a new interdisciplinary program to educate materials engineers with a particular emphasis on microelectronics-related manufacturing. The bachelor's level curriculum in Microelectronics Process Engineering (μProE) is interdisciplinary, drawing from materials, chemical, electrical and industrial engineering programs and tied together with courses, internships and projects which integrate thin film processing with manufacturing control methods. Our graduates are prepared for entry level engineering jobs that require knowledge and experience in microelectronics-type fabrication and statistics applications in manufacturing engineering. They also go on to graduate programs in materials science and engineering. The program objectives were defined using extensive input from industry and alumni. We market our program as part of workforce development for Silicon Valley and have won significant support from local industry as well as federal sources. We plan to offer a vertical slice of workforce development, from lower division engineering and community college activities to industry short courses. We also encourage all engineering majors to take electives in our program. All our course and program development efforts rely on clearly defined learning objectives.

4 citations


Journal ArticleDOI
TL;DR: In this article, photo-assisted metalorganic vapor phase epitaxial (MOVPE) growth of ZnMgS on Si (100) substrates is presented.
Abstract: : This paper presents for the first time photo-assisted Metalorganic vapor phase epitaxial (MOVPE) growth of ZnMgS on Si (100) substrates. The growth was done using dimethylzinc (DMZn), bismethylcyclo-pentadienyl-magnesium ((MeCP)2Mg), and diethylsulfhide (DES) as zinc, magnesium, and sulfur precursors. Epitaxial characterization by X-ray Photoelectron Spectroscopy (XPS), and low - angle X-ray Diffraction (XRD) results are presented. Mg solid phase incorporation is estimated to vary from 0 to 60 percent. The epitaxial nature of the ZnMgS layers has been verified using the low-angle X-ray diffraction eliminating any interference from the Si substrate. It can be shown with this technique that the change in the ZnMgS peak position changes from 27.35 degrees to 26.5 degrees with an increase in Mg incorporation, compared with a Si control sample peak at 27.4 degrees. XRD results obtained have been verified with XPS data. Chlorine doping of the ZnMgS layer was also studied. Concentrations up to 3 x 10(exp 13)/cu cm were observed in the ZnMgS layer. Results of the n (ZnMgS:Cl) - p (Si) diodes fabricated are also presented.

3 citations