Davide Bisi

TL;DR: In this paper, the advantages and limitations of the current-transient methods used for the study of the deep levels in GaN-based high-electron mobility transistors (HEMTs), by evaluating how the procedures adopted for measurement and data analysis can influence the results of the investigation.

TL;DR: In this paper, an extensive investigation of the trap with activation energy equal to 0.6 eV was performed on AlGaN/GaN HEMTs with increasing concentration of iron doping in the buffer.

TL;DR: In this paper, the negative threshold voltage instability in GaN-on-Si metal-insulator-semiconductor high electron mobility transistors with partially recessed AlGaN was investigated.

TL;DR: In this paper, the authors review the parasitic mechanisms that affect the performance of GaN-on-Si HEMTs and describe the following relevant processes: (i) trapping of electrons in the buffer, induced by off-state operation; (ii) trapping hot electrons, which is promoted by semi-on state operation; and (iii) trapping, in the gate insulator, favored by the exposure to positive gate bias.

TL;DR: In this article, an extensive analysis of the charge capture transients induced by OFF-state bias in double heterostructure AlGaN/GaN MIS-high electron mobility transistor grown on silicon substrate is presented.