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Davidson Alexander Philip

Bio: Davidson Alexander Philip is an academic researcher from Alcan. The author has contributed to research in topics: Anodizing & Oxide. The author has an hindex of 3, co-authored 3 publications receiving 855 citations.

Papers
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Journal ArticleDOI
01 Jan 1989-Nature
TL;DR: In this article, the authors proposed to progressively reduce the anodizing voltage, thereby causing perforation of the barrier layer and separation of the film as a porous membrane, which can be used in a number of diverse applications, such as filtration, bioreactors and tissue culture.
Abstract: Synthetic membranes are used in a number of diverse applications, such as filtration1,2, bioreactors2,3, tissue culture4, analytical devices including sensors2,5, and as supports for active materials1,5. Narrow pore-size distribution, high pore density and thinness are often important attributes. The anodic oxidation of aluminium6 can produce porous films possessing these features; the anodizing voltage controls the pore size and pore density, whereas the thick-ness is determined by the amount of charge transferred. A major problem with this technique, however, is that the films remain attached to the aluminium, with the pore base closed by an oxide barrier layer. Here we overcome this problem by progressively reducing the anodizing voltage, thereby causing perforation of the barrier layer and separation of the film as a porous membrane.

768 citations

Patent
07 Oct 1985
TL;DR: An anodic aluminum oxide film is made by anodizing an aluminum metal substrate, then reducing the applied voltage at a rate to permit partial or complete recovery of the oxide film, either continuously or incrementally in small steps down to a level preferably below 3 V.
Abstract: An anodic aluminum oxide film (12) has a system of larger pores (14) extending in from one face (16) and interconnecting with a system of smaller pores (24) extending in from the other face (26). The film is made by anodizing an aluminum metal substrate, then reducing the applied voltage at a rate to permit partial or complete recovery of the oxide film, either continuously or incrementally in small steps down to a level preferably below 3 V, and separating the oxide film from the substrate.

74 citations

Patent
15 Apr 1987
TL;DR: In this paper, a porous catalytically active inorganic membrane is defined as an anodic aluminum oxide membrane with a deposit of catalytic active material present within the pores, preferably concentrated in the ends of the pores adjacent the second surface of the membrane.
Abstract: A catalyst device comprises a porous catalytically active inorganic membrane, means for presenting a fluid reactant to a first surface of the membrane and means for recovering a fluid reaction product from the second surface of the membrane. The membrane is preferably an anodic aluminum oxide membrane with a deposit of catalytically active material present within the pores, preferably concentrated in the ends of the pores adjacent the second surface of the membrane.

26 citations


Cited by
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PatentDOI
06 Apr 2012-Science
TL;DR: In this article, the authors present stretchable and printable semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed, or otherwise deformed.
Abstract: The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

1,673 citations

Journal ArticleDOI
TL;DR: Lithography with Neutral Metastable Atoms 1838 4.1.
Abstract: 4.1. Nanomachining with Scanning Probes 1831 4.2. Soft Lithography 1832 4.3. Embossing with Rigid Masters 1835 4.4. Near-Field Phase-Shifting Photolithography 1835 4.5. Topographically Directed Photolithography 1837 4.6. Topographically Directed Etching 1837 4.7. Lithography with Neutral Metastable Atoms 1838 4.8. Approaches to Size Reduction 1839 5. Techniques for Making Regular or Simple Patterns 1839

1,477 citations

PatentDOI
TL;DR: In this article, the authors present methods, systems and system components for transferring, assembling and integrating features and arrays of features having selected nanosized and/or microsized physical dimensions, shapes and spatial orientations.
Abstract: The present invention provides methods, systems and system components for transferring, assembling and integrating features and arrays of features having selected nanosized and/or microsized physical dimensions, shapes and spatial orientations. Methods of the present invention utilize principles of ‘soft adhesion’ to guide the transfer, assembly and/or integration of features, such as printable semiconductor elements or other components of electronic devices. Methods of the present invention are useful for transferring features from a donor substrate to the transfer surface of an elastomeric transfer device and, optionally, from the transfer surface of an elastomeric transfer device to the receiving surface of a receiving substrate. The present methods and systems provide highly efficient, registered transfer of features and arrays of features, such as printable semiconductor element, in a concerted manner that maintains the relative spatial orientations of transferred features.

1,305 citations

PatentDOI
16 Jun 2009-Nature
TL;DR: In this paper, a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, is used to provide a semiconductor channel exhibiting improved electronic properties relative to conventional nanotube-based electronic systems.
Abstract: The present invention provides device components geometries and fabrication strategies for enhancing the electronic performance of electronic devices based on thin films of randomly oriented or partially aligned semiconducting nanotubes. In certain aspects, devices and methods of the present invention incorporate a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, providing a semiconductor channel exhibiting improved electronic properties relative to conventional nanotubes-based electronic systems.

1,081 citations