Author
Davy Carole
Other affiliations: University of Lyon
Bio: Davy Carole is an academic researcher from Claude Bernard University Lyon 1. The author has contributed to research in topics: Vapor–liquid–solid method & Epitaxy. The author has an hindex of 8, co-authored 44 publications receiving 201 citations. Previous affiliations of Davy Carole include University of Lyon.
Papers
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TL;DR: In this paper, a simple, fast and cost-effective etching technique to create nanopores in diamond membrane by self-assembled Ni nanoparticles is proposed, in which a diamond film is annealed with thin Ni layers at 800-850 degrees C in hydrogen atmosphere.
48 citations
TL;DR: In this paper, the performance of ohmic contacts fabricated on highly p-type doped 4H-SiC epitaxial layer selectively grown by vapor-liquid-solid transport is reported.
Abstract: This work reports on the performances of ohmic contacts fabricated on highly p-type doped 4H-SiC epitaxial layer selectively grown by vapor-liquid-solid transport. Due to the very high doping level ...
15 citations
TL;DR: In this paper, the vapour-liquid-solid mechanism in Al-Si melt was used to obtain p+-doped SiC localized layers on 4H-SiC substrate.
Abstract: Selective epitaxial growth in buried patterns was studied using the vapour-liquid-solid mechanism in Al-Si melt in order to obtain p+-doped SiC localized layers on 4H-SiC substrate. Homogeneous deposition with step bunched morphology was obtained by adding propane at room temperature before growth at 1100°C. Patterns as large as 800 µm and as narrow as 10 µm were completely filled in this way. The deposition kinetics demonstrates that the process is self limited and mainly depends on the initial amount of Si in the liquid. The deposit is highly p-type doped and the p-n junction is demonstrated.
14 citations
TL;DR: In this article, a comparative investigation of the incorporation of group III, IV and V impurities in 3C-SiC heteroepitaxial layers grown by the vapour-liquid-solid (VLS) mechanism on on-axis αSiC substrates is presented.
14 citations
TL;DR: In this paper, the use of patterned 4H-SiC(0001) substrates for the heteroepitaxial growth of 3C-SiCs by vapor-liquid-solid (VLS) mechanism using Ge(50)Si(50), was reported.
Abstract: In this work, we report on the use of patterned 4H-SiC(0001) substrates for the heteroepitaxial growth of 3C-SiC by vapor-liquid-solid (VLS) mechanism using Ge(50)Si(50) melt. Mesas structures of various size and shape were obtained by standard photolithography and dry etching processes. On the temperature range investigated 1300-1450 degrees C, 3C-SiC deposit was obtained on top and outside the mesas. Some lateral enlargement of these mesas was observed, but it was systematically homoepitaxial. The lateral growth rate was found rather low compared to other techniques like chemical vapor deposition, with a maximum value of similar to 12 mu m/h. In addition, elimination of twin boundaries (TBs) inside the 3C-SiC deposit on top of the mesas was observed in the temperature range of 1400-1450 degrees C and for specific mesa shape or orientation of the sidewalls. The best case for eliminating these TBs was found to be with initially circular mesas, which spontaneously form well orientated hexagonal facets and then lead to TB-free deposit on top after VLS growth.
12 citations
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07 Jan 2014
TL;DR: Properties and Application of Geopolymers Vol. 841 (/MSF.841 /book) Development and Investigation of Materials Using Modern Techniques Vol. 840 (/MS F.840/book) Superplasticity in Advanced Materials ICSAM 2015 Vols.
Abstract: Properties and Application of Geopolymers Vol. 841 (/MSF.841 /book) Development and Investigation of Materials Using Modern Techniques Vol. 840 (/MSF.840/book) Superplasticity in Advanced Materials ICSAM 2015 Vols. 838-839 (/MSF.838-839/book) 12th International Conference on High Speed Machining Vols. 836-837 (/MSF.836-837/book) Sintering Fundamentals II Vol. 835 (/MSF.835/book) Advanced Machining Technologies: Traditions and Innovations Vol. 834 (/MSF.834/book) Applied Materials and Technologies Vol. 833 (/MSF.833/book) Emerging Functional Materials: Book (/MSF.841/book) Papers (/MSF.841)
330 citations
TL;DR: In this paper, a 3D macroporous BDD (3D-BDD) foam electrode with a structure of evenly distributed pores and interconnected networks in which wastewater can flow freely was prepared using a simple and reproducible method.
Abstract: Boron-doped diamond (BDD) has proved to be an ideal anode material for the electrolysis of organic sewage. However, the existing two dimensional BDD electrodes with small active area and low mass transfer rates, limit their further improvement in degradation efficiency. In this paper, a novel three dimensional macroporous BDD (3D-BDD) foam electrode with a structure of evenly distributed pores and interconnected networks in which wastewater can flow freely was prepared using a simple and reproducible method. Compared to two dimensional BDD electrodes of the same geometry, the electro-active surface area of 3D-BDD electrode increased by ˜20 times, and the electrochemical oxidation reaction rate constant of RB-19 increased by ˜350 times. Under optimized conditions, the energy consumption reduced to a minimum of 0.03 kWh(gTOC) −1, and the MCE reach a maximum of 325.86%.
108 citations
TL;DR: In this paper, the authors used vertically aligned carbon nanotubes (VACNTs) with high surface areas as a template onto which boron doped diamond is grown, and the resulting composite was found to exhibit a double layer capacitance as high as 0.58mF cm−2 and very low impedance when compared to planar diamond electrodes in phosphate buffer saline solution.
66 citations
TL;DR: In this article, polycrystalline boron-doped diamond (BDD) was grown on a Ta substrate by electron-assisted hot filament chemical vapor deposition, and porous BDD/Ta multilayer films were constructed by Ni-nanoparticle-assisted plasma etching.
66 citations