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de Dm Dago Leeuw

Bio: de Dm Dago Leeuw is an academic researcher from Philips. The author has contributed to research in topics: Electronics & Field-effect transistor. The author has an hindex of 3, co-authored 4 publications receiving 445 citations.

Papers
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Journal ArticleDOI
TL;DR: In this article, the authors demonstrate two demonstrated technologies for the fabrication of organic integrated circuits: the unipolar and complementary technology, which can be either evaporated or solution-processed.
Abstract: To date there are two demonstrated technologies for the fabrication of organic integrated circuits: the unipolar and the complementary technology. Unipolar architectures consist of p-channel organic field-effect transistors (OFETs), which are simple to fabricate since they require a single, high-workfunction metal (e.g., gold) and a single semiconductor material, which can be either evaporated or solution-processed.[1–4] Despite this great advantage, unipolar circuits have poor performance, exhibiting a narrow noise margin, low yield, and high power consumption.[2] In order to improve their performance, more sophisticated architectures are usually employed.[5] Although beneficial, such an approach increases circuit complexity by nearly 100 %. Complementary architectures, adopted from silicon microelectronics, solve this bottleneck by providing major advantages in circuit performance, including wide noise margin, robustness, and low power dissipation.[6,7] Unlike silicon technology, however, fabrication of discrete organic n- and p-channel transistors with lateral dimensions of a few micrometers, typically required for largescale integration, is still very challenging.

232 citations

Journal ArticleDOI
TL;DR: In this article, the first flexible, even rollable, quarter video graphics array (QVGA) active matrix displays based on organic semiconductors have been reported, which are used in the field of large-area electronics where numerous devices are integrated on low-cost substrates such as plastics.
Abstract: Progress in environmental stability and processability, and the increase of the field-effect mobility of organic semiconductors has triggered their use as the active element in microelectronic devices. The advantages of their application are the easy processing, for example, spin-coating and ink-jet printing, without a temperature hierarchy, and their mechanical flexibility. Applications are foreseen in the field of large-area electronics where numerous devices are integrated on low-cost substrates such as plastics. The first flexible, even rollable, quarter video graphics array (QVGA) active matrix displays based on organic semiconductors have already been reported.[1]

224 citations

Proceedings ArticleDOI
17 Aug 2010
TL;DR: In this paper, the authors proposed a mechanism in which holes in the semiconductor are converted into protons in the presence of water and a reversible migration of these protons into the gate dielectric to explain the operational instabilities in organic transistors.
Abstract: Organic field-effect transistors exhibit operational instabilities when a gate bias is applied. For a constant gate bias the threshold voltage shifts towards the applied gate bias voltage, an effect known as the bias-stress effect. We have performed a detailed experimental and theoretical study of operational instabilities in p-type transistors with silicon-dioxide gate dielectric. We propose a mechanism in which holes in the semiconductor are converted into protons in the presence of water and a reversible migration of these protons into the gate dielectric to explain the instabilities in organic transistors. We show how redistribution of charge between holes in the semiconductor and protons in the gate dielectric can consistently explain the experimental observations. Furthermore, we explain in detail the recovery of a pres-stressed transistor on applying zero gate bias. We show that recovery dynamics depends strongly on the extent of stressing. Our mechanism is consistent with the known aspects of bias-stress effect like acceleration due to humidity, constant activation energy and reversibility.

2 citations


Cited by
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Journal ArticleDOI
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Abstract: Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

2,440 citations

Journal ArticleDOI
TL;DR: In this article, a review of π-conjugated polymeric semiconductors for organic thin-film (or field effect) transistors (OTFTs or OFETs) and bulk-heterojunction photovoltaic (or solar) cell (BHJ-OPV or OSC) applications are summarized and analyzed.
Abstract: The optoelectronic properties of polymeric semiconductor materials can be utilized for the fabrication of organic electronic and photonic devices. When key structural requirements are met, these materials exhibit unique properties such as solution processability, large charge transporting capabilities, and/or broad optical absorption. In this review recent developments in the area of π-conjugated polymeric semiconductors for organic thin-film (or field-effect) transistors (OTFTs or OFETs) and bulk-heterojunction photovoltaic (or solar) cell (BHJ-OPV or OSC) applications are summarized and analyzed.

2,076 citations

Journal ArticleDOI
TL;DR: This work focuses on Organic Electronics Materials, which consist of Organic Transistors, Polymer Semiconductors, and Poly(3,2-b)thiophenes, and investigates the role of bias stress in these materials.
Abstract: 2.3. Medical Devices and Sensors 9 2.4. Radio Frequency Applications 10 3. Materials 12 3.1. Organic Electronics Materials 12 3.2. Semiconducting Polymer Design 13 3.3. Poly(3-alkylthiophenes) 14 3.4. Poly(thieno(3,2-b)thiophenes 15 3.5. Benchmark Polymer Semiconductors 15 3.6. High Performance Polymer Semiconductors 15 4. Device Stability 16 4.1. Bias Stress in Organic Transistors 17 4.1.1. Bias Stress Characterization 17 4.1.2. Bias Stress Mechanism 18 4.2. Short Channel Effects in Organic Transistors 19 5. Materials Patterning and Integration 20 6. Conclusions 22 7. Acknowledgments 22 8. References 22

1,602 citations

Journal ArticleDOI
Hagen Klauk1
TL;DR: A critical review provides a short summary of several important aspects of organic transistors, including materials, microstructure, carrier transport, manufacturing, electrical properties, and performance limitations.
Abstract: Over the past 20 years, organic transistors have developed from a laboratory curiosity to a commercially viable technology. This critical review provides a short summary of several important aspects of organic transistors, including materials, microstructure, carrier transport, manufacturing, electrical properties, and performance limitations (200 references).

1,120 citations