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Debnarayan Jana

Other affiliations: National Taiwan University
Bio: Debnarayan Jana is an academic researcher from University of Calcutta. The author has contributed to research in topics: Graphene & Density functional theory. The author has an hindex of 23, co-authored 127 publications receiving 2328 citations. Previous affiliations of Debnarayan Jana include National Taiwan University.


Papers
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Journal ArticleDOI
TL;DR: In this paper, the authors explored Pauli paramagnetism, Landau diamagnetic diamagnetisms, and de Haas-van Alphen effect in a single framework, and unified these three effects for all temperatures as well as for all strengths of magnetic field.
Abstract: We have explored Pauli paramagnetism, Landau diamagnetism, and de Haas-van Alphen effect in a single framework, and unified these three effects for all temperatures as well as for all strengths of magnetic field. Our result goes beyond Pauli-Landau result on the magnetism of the 3-D ideal gas of electrons, and is able to describe crossover of the de Haas-van Alphen oscillation to the saturation of magnetization. We also have obtained a novel asymptotic series expansion for the low temperature properties of the system.

6 citations

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TL;DR: In this paper, the authors investigated the role of spin-orbit coupling on the band structure and appearance of spin Hall current in a buckled two-dimensional material and found that it is a direct bandgap semiconductor with low carrier effective mass.
Abstract: In this communication, we report a theoretical attempt to understand the involvement of electronic structure in determination of optical and thermal properties of C$_{17}$Ge germagraphene, a buckled two dimensional material. The structure is found to be a direct bandgap semiconductor with low carrier effective mass. Our study has revealed that the effect of spin-orbit coupling on the band structure and in appearance of spin Hall current in the material. A selectively high blue to ultraviolet light absorption and a refractive index comparable to flint glass open up the possible applicability of this material for optoelectronic devices. From electronic structural point of view, we investigate the reason behind its moderately high Seebeck coefficient and power factor comparable to traditional thermoelectric materials. Besides its narrow bandgap, relatively smaller work function of C$_{17}$Ge ($4.361 ~eV$) than graphene ($4.390 ~eV$) and germanene ($4.682 ~eV$) assures more easily removal of electron from the surface. This material is turned out to be an excellent alternative for futuristic semiconductor application from optical to thermal device regime.

6 citations

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TL;DR: In this paper, MeV Argon (Ar) ion irradiation turns white coloured ZnO to yellowish (fluence 1 × 10 14 ions/cm 2 ) and then reddish brown (1 × 10 16 ions/ cm 2 ).
Abstract: MeV Argon (Ar) ion irradiation turns white coloured ZnO to yellowish (fluence 1 × 10 14 ions/cm 2 ) and then reddish brown (1 × 10 16 ions/cm 2 ). At the same time the material becomes much more conducting and purely blue luminescent for the highest fluence of irradiation. To get insight on the defects in the irradiated samples Ultraviolet-visible (UV-vis) absorption, Raman, and photoluminescence (PL) spectroscopy and Glancing Angle X-Ray Diffraction (GAXRD) measurements have been carried out. Enhancement of overall disorder in the irradiated samples is reflected from the GAXRD peak broadening. UV-vis absorption spectra of the samples shows new absorption bands due to irradiation. Complete absorption in the blue region of the spectrum and partial absorption in the green and red region changes the sample colour from white to reddish brown. The Raman peak representing wurtzite structure of the ZnO material (~ 437 cm -1 ) has decreased monotonically with the increase of irradiation fluence. At the same time, evolution of the 575 cm -1 Raman mode in the irradiated samples shows the increase of oxygen deficient disorder like zinc interstitials (IZn) and/or oxygen vacancies (VO) in ZnO. PL spectrum of the yellow coloured sample shows large reduction of overall luminescence compared to the unirradiated one. Further increase of fluence causes an increase of luminescence in the blue region of the spectrum. The blue-violet emission can be associated with the interstitial Zn (IZn) related optical transition. The results altogether indicates IZn type defects in the highest fluence irradiated sample. Large changes in the electrical resistance and luminescent features of ZnO using Ar ion beam provides a purposeful way to tune the optoelectronic properties of ZnO based devices. Copyright © 2015 VBRI press.

5 citations

Journal ArticleDOI
TL;DR: In this article, the authors investigated a (d + 1)-dimensional discrete erosion model for d = 1, 2 and 3, where the dynamics of the model is controlled by the physically motivated erosion mechanism.
Abstract: We investigate a novel (d + 1)-dimensional discrete erosion model for d = 1, 2 and 3. The dynamics of the model is controlled by the physically motivated erosion mechanism. The coarse grained nature of this erosion process has been well compared with the Kardar–Parisi–Zhang (KPZ) equation. The kinetic roughening of the discrete model shows the same scaling behavior as that of the KPZ equation in the dimensions d = 1, 2. Moreover, in this present discrete model in (3 + 1)-dimension almost smooth interface has been obtained with vanishingly small roughness exponent, indicating the model belongs to the weak coupling regime of KPZ universality class.

5 citations

Journal ArticleDOI
TL;DR: In this paper, the structural stability and magnetic novelty of adsorbing transition metal (TM) dimers on graphyne (GY) surface, GY@A-B, were demonstrated.
Abstract: In this paper a systematic study is carried out to demonstrate the structural stability and magnetic novelty of adsorbing transition metal (TM) dimers (A-B) on graphyne (GY) surface, GY@A-B. Our research points out that the dimers are strongly adsorbed onto GY due to their large natural pores and the electron affinity of the sp-hybridized carbon atoms. Electronic properties of these dimer-graphyne composite systems are of particular importance as they behave as degenerate semiconductors with partial occupation of states atEF. Furthermore, their remarkable spin polarization (>80%) at Fermi energy (EF) can be of paramount importance in spintronics applications. Most of the GY@A-B structures exhibit large magnetic anisotropies as well as magnetic moments along the out-of-plane direction with respect to the GY surface. Particularly, GY@Co-Ir, GY@Ir-Ir and GY@Ir-Os structures possess positive magnetic anisotropic energies (MAE) of 121 meV, 81 meV and 137 meV, respectively, which are comparable to other well-known TM dimer doped systems. The emergence of high MAE can be understood using the second-order perturbation theory on the basis of the strong spin-orbit coupling (SOC) between the two TMs and the degeneracy of their d-orbitals nearEF. A close correspondence between the simulated and the analytical results has been established through our work. Further, a simple estimation shows that, GY@A-B structures have the potential to store data up to 64 PB m-2. These intriguing electronic characteristics along with magnetism suggest GY@A-B to be a promising material for future magnetic storage devices.

5 citations


Cited by
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Proceedings Article
14 Jul 1996
TL;DR: The striking signature of Bose condensation was the sudden appearance of a bimodal velocity distribution below the critical temperature of ~2µK.
Abstract: Bose-Einstein condensation (BEC) has been observed in a dilute gas of sodium atoms. A Bose-Einstein condensate consists of a macroscopic population of the ground state of the system, and is a coherent state of matter. In an ideal gas, this phase transition is purely quantum-statistical. The study of BEC in weakly interacting systems which can be controlled and observed with precision holds the promise of revealing new macroscopic quantum phenomena that can be understood from first principles.

3,530 citations

01 Sep 1955
TL;DR: In this paper, the authors restrict their attention to the ferrites and a few other closely related materials, which are more closely related to anti-ferromagnetic substances than they are to ferromagnetics in which the magnetization results from the parallel alignment of all the magnetic moments present.
Abstract: In this chapter, we will restrict our attention to the ferrites and a few other closely related materials. The great interest in ferrites stems from their unique combination of a spontaneous magnetization and a high electrical resistivity. The observed magnetization results from the difference in the magnetizations of two non-equivalent sub-lattices of the magnetic ions in the crystal structure. Materials of this type should strictly be designated as “ferrimagnetic” and in some respects are more closely related to anti-ferromagnetic substances than they are to ferromagnetics in which the magnetization results from the parallel alignment of all the magnetic moments present. We shall not adhere to this special nomenclature except to emphasize effects, which are due to the existence of the sub-lattices.

2,659 citations

Journal ArticleDOI
TL;DR: In this paper, the authors address the nature of these height fluctuations by means of straightforward atomistic Monte Carlo simulations based on a very accurate many-body interatomic potential for carbon and find that ripples spontaneously appear due to thermal fluctuations with a size distribution peaked around 70 \AA which is compatible with experimental findings (50-100 \AA) but not with the current understanding of flexible membranes.
Abstract: The stability of two-dimensional (2D) layers and membranes is subject of a long standing theoretical debate. According to the so called Mermin-Wagner theorem, long wavelength fluctuations destroy the long-range order for 2D crystals. Similarly, 2D membranes embedded in a 3D space have a tendency to be crumpled. These dangerous fluctuations can, however, be suppressed by anharmonic coupling between bending and stretching modes making that a two-dimensional membrane can exist but should present strong height fluctuations. The discovery of graphene, the first truly 2D crystal and the recent experimental observation of ripples in freely hanging graphene makes these issues especially important. Beside the academic interest, understanding the mechanisms of stability of graphene is crucial for understanding electronic transport in this material that is attracting so much interest for its unusual Dirac spectrum and electronic properties. Here we address the nature of these height fluctuations by means of straightforward atomistic Monte Carlo simulations based on a very accurate many-body interatomic potential for carbon. We find that ripples spontaneously appear due to thermal fluctuations with a size distribution peaked around 70 \AA which is compatible with experimental findings (50-100 \AA) but not with the current understanding of stability of flexible membranes. This unexpected result seems to be due to the multiplicity of chemical bonding in carbon.

1,367 citations